Inventor · disambiguated record
Ryoji Hoshi
Also filed as: HOSHI RYOJI
37 granted patents·11 pending applications·178 citations·filing 1992–2021
96Inventor score
Top patents by PatentIndex Score
48 records- 0188US10400353B2Method for controlling resistivity and N-type silicon single crystalSHINETSU HANDOTAI KK·Filed 2015·Granted Sep 3, 2019·2 cites·6 claims
- 0287US9938634B2Method of producing silicon single crystalSHINETSU HANDOTAI KK·Filed 2014·Granted Apr 10, 2018·3 cites·3 claims
- 0384US6893499B2Silicon single crystal wafer and method for manufacturing the sameSHINETSU HANDOTAI KK·Filed 2001·Granted May 17, 2005·21 cites·11 claims
- 0482US9260796B2Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereofHOSHI RYOJI·Filed 2008·Granted Feb 16, 2016·5 cites·9 claims
- 0582US6592662B2Method for preparing silicon single crystal and silicon single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Jul 15, 2003·22 cites·17 claims
- 0681US8885915B2Method for measuring and controlling distance between lower end surface of heat shielding member and surface of raw material melt and method for manufacturing silicon single crystalSUGAWARA KOSEI·Filed 2011·Granted Nov 11, 2014·3 cites·30 claims
- 0778US9217208B2Apparatus for producing single crystalHOSHI RYOJI·Filed 2008·Granted Dec 22, 2015·3 cites·14 claims
- 0878US9111883B2Method for evaluating silicon single crystal and method for manufacturing silicon single crystalSHINETSU HANDOTAI KK·Filed 2012·Granted Aug 18, 2015·4 cites·6 claims
- 0978US6565822B1Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon waferSHINETSU HANDOTAI KK·Filed 2000·Granted May 20, 2003·13 cites·19 claims
- 1077US6632280B2Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Oct 14, 2003·19 cites·15 claims
- 1176US9773710B2Method for evaluating concentration of defect in silicon single crystal substrateSHINETSU HANDOTAI KK·Filed 2014·Granted Sep 26, 2017·3 cites·8 claims
- 1270US7594966B2Method for producing a single crystalSHINETSU HANDOTAI KK·Filed 2004·Granted Sep 29, 2009·8 cites·5 claims
- 1368US11053606B2Method of producing silicon single crystal, and silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2017·Granted Jul 6, 2021·0 cites·4 claims
- 1467US9850595B2Method for heat treatment of silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2015·Granted Dec 26, 2017·1 cites·6 claims
- 1567US2021189589A1Silicon single crystal and silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2021·Application pending·0 cites
- 1666US6117231AMethod of manufacturing semiconductor silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Sep 12, 2000·20 cites·8 claims
- 1764US12084788B2Method for producing a silicon single crystal doped with nitrogen and having a controlled amount of carbon impuritiesSHINETSU HANDOTAI KK·Filed 2020·Granted Sep 10, 2024·0 cites·12 claims
- 1864US9425345B2Epitaxial wafer and manufacturing method thereofSHINETSU HANDOTAI KK·Filed 2012·Granted Aug 23, 2016·1 cites·19 claims
- 1963US9337013B2Silicon wafer and method for producing the sameFUSEGAWA IZUMI·Filed 2012·Granted May 10, 2016·2 cites·2 claims
- 2058US7713851B2Method of manufacturing silicon epitaxial waferSHINETSU HANDOTAI KK·Filed 2005·Granted May 11, 2010·1 cites·4 claims
- 2156US6156119ASilicon single crystal and method for producing the sameSHINETSU HANDOTAI KK·Filed 1999·Granted Dec 5, 2000·13 cites·12 claims
- 2254US7204881B2Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing itSHINETSU HANDOTAI KK·Filed 2003·Granted Apr 17, 2007·4 cites·29 claims
- 2354US6632411B2Silicon wafer and method for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Oct 14, 2003·2 cites·20 claims
- 2452US10066322B2Method for heat treatment of silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2017·Granted Sep 4, 2018·0 cites·5 claims
- 2552US9650725B2Method for manufacturing a defect-controlled low-oxygen concentration silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2013·Granted May 16, 2017·0 cites·11 claims
- 2652US2015360959A1Method of producing silicon carbide and silicon carbideSHINETSU HANDOTAI KK·Filed 2014·Application pending·0 cites
- 2751US10100430B2Method for growing silicon single crystalSHINETSU HANDOTAI KK·Filed 2013·Granted Oct 16, 2018·0 cites·11 claims
- 2851US7201801B2Heater for manufacturing a crystalSHINETSU HANDOTAI KK·Filed 2003·Granted Apr 10, 2007·1 cites·25 claims
- 2948US8083852B2Single crystal growth method and single crystal pulling apparatusSUGAWARA KOSEI·Filed 2009·Granted Dec 27, 2011·0 cites·24 claims
- 3047US2010116195A1Method for growing silicon single crystalSHINETSU HANDOTAI KK·Filed 2008·Application pending·0 cites
- 3146US2021222321A1Method for growing single crystalSHINETSU HANDOTAI KK·Filed 2019·Application pending·0 cites
- 3246US2013340671A1Silica glass crucible, method for manufacturing same, and method for manufacturing silicon single crystalKIMURA AKIHIRO·Filed 2012·Application pending·0 cites
- 3345US7396405B2Single crystal, single crystal wafer, epitaxial wafer, and method of growing single crystalSHINETSU HANDOTAI KK·Filed 2003·Granted Jul 8, 2008·0 cites·10 claims
- 3444US8764900B2Apparatus and method for producing single crystalsTAKANO KIYOTAKA·Filed 2007·Granted Jul 1, 2014·0 cites·16 claims
- 3544US5612539AMethod of evaluating lifetime related quality of semiconductor surfaceSHINETSU HANDOTAI KK·Filed 1995·Granted Mar 18, 1997·11 cites·16 claims
- 3643US7909930B2Method for producing a silicon single crystal and a silicon single crystalSHINETSU HANDOTAI KK·Filed 2005·Granted Mar 22, 2011·0 cites·16 claims
- 3743US2013247815A1Single crystal production apparatus and method for producing single crystalSUGAWARA KOSEI·Filed 2012·Application pending·0 cites
- 3842US9783912B2Silicon single crystal growing apparatus and method for growing silicon single crystalSHINETSU HANDOTAI KK·Filed 2013·Granted Oct 10, 2017·0 cites·8 claims
- 3941US8211228B2Method for producing single crystal and a method for producing annealed waferHOSHI RYOJI·Filed 2005·Granted Jul 3, 2012·0 cites·18 claims
- 4041US6764548B2Apparatus and method for producing silicon semiconductor single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Jul 20, 2004·0 cites·29 claims
- 4141US5302832AMethod for evaluation of spatial distribution of deep level concentration in semiconductor crystalSHINETSU HANDOTAI KK·Filed 1992·Granted Apr 12, 1994·9 cites·1 claims
- 4241US2006191468A1Process for producing single crystalSHINETSU HANDOTAI KK·Filed 2004·Application pending·0 cites
- 4340US9938640B2Method for heat treatment of silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2015·Granted Apr 10, 2018·0 cites·8 claims
- 4438US2008038526A1Silicon Epitaxial Wafer And Manufacturing Method ThereofSHINETSU HANDOTAI KK·Filed 2005·Application pending·0 cites
- 4538US2014379276A1Method for calculating nitrogen concentration in silicon single crystal and method for calculating resistivity shift amountHOSHI RYOJI·Filed 2012·Application pending·0 cites
- 4638US2007269338A1Silicon Epitaxial Wafer and Manufacturing Method ThereofSHINETSU HANDOTAI KK·Filed 2005·Application pending·0 cites
- 4736US5598452AMethod of evaluating a silicon single crystalSHINETSU HANDOTAI KK·Filed 1995·Granted Jan 28, 1997·7 cites·8 claims
- 4835US2013323153A1Silicon single crystal waferHOSHI RYOJI·Filed 2012·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Ryoji Hoshi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →