Inventor · disambiguated record
Jeffrey L. Libbert
Also filed as: LIBBERT JEFFREY L · LIBBERT JEFFREY LOUIS
53 granted patents·11 pending applications·531 citations·filing 2000–2025
98Inventor score
Files withGLOBALWAFERS CO LTD22SUNEDISON SEMICONDUCTOR LTD UEN201334164H16MEMC ELECTRONIC MATERIALS15LIBBERT JEFFREY L4SUNEDISON INC2
Top patents by PatentIndex Score
64 records- 0198US9202711B2Semiconductor-on-insulator wafer manufacturing method for reducing light point defects and surface roughnessSUNEDISON INC·Filed 2014·Granted Dec 1, 2015·66 cites·20 claims
- 0298US7217320B2Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faultsMEMC ELECTRONICS MATERIALS INC·Filed 2004·Granted May 15, 2007·180 cites·51 claims
- 0396US8846493B2Methods for producing silicon on insulator structures having high resistivity regions in the handle waferLIBBERT JEFFREY L·Filed 2012·Granted Sep 30, 2014·68 cites·35 claims
- 0494US7135351B2Method for controlling of thermal donor formation in high resistivity CZ siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Nov 14, 2006·26 cites·36 claims
- 0593US9831115B2Process flow for manufacturing semiconductor on insulator structures in parallelSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2017·Granted Nov 28, 2017·10 cites·23 claims
- 0692US10283402B2Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stressSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted May 7, 2019·6 cites·60 claims
- 0791US10468294B2High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surfaceSUNEDISON SEMICONDUCTOR LTD·Filed 2017·Granted Nov 5, 2019·8 cites·30 claims
- 0891US9165802B2Methods for cleaving a bonded wafer structureSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2012·Granted Oct 20, 2015·9 cites·10 claims
- 0988US11081407B2Methods for assessing semiconductor structuresGLOBALWAFERS CO LTD·Filed 2019·Granted Aug 3, 2021·4 cites·6 claims
- 1088US9159596B2Clamping apparatus for cleaving a bonded wafer structureSUNEDISON SEMICONDUCTOR LTD·Filed 2012·Granted Oct 13, 2015·6 cites·9 claims
- 1188US6846539B2Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faultsMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Jan 25, 2005·24 cites·30 claims
- 1287US11532501B2Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2021·Granted Dec 20, 2022·1 cites·52 claims
- 1386US10943813B2Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2019·Granted Mar 9, 2021·2 cites·33 claims
- 1486US8845859B2Systems and methods for cleaving a bonded wafer pairRIES MICHAEL JOHN·Filed 2012·Granted Sep 30, 2014·11 cites·21 claims
- 1586US2025259884A1High resistivity silicon-on-insulator substrate comprising an isolation regionGLOBALWAFERS CO LTD·Filed 2025·Application pending·0 cites
- 1684US12300535B2High resistivity silicon-on-insulator substrate comprising an isolation regionGLOBALWAFERS CO LTD·Filed 2023·Granted May 13, 2025·0 cites·13 claims
- 1784US7071080B2Process for producing silicon on insulator structure having intrinsic gettering by ion implantationMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Jul 4, 2006·11 cites·42 claims
- 1884US6897084B2Control of oxygen precipitate formation in high resistivity CZ siliconMEMC ELECTRONIC MATERIALS·Filed 2002·Granted May 24, 2005·29 cites·24 claims
- 1983US11942360B2Radio frequency silicon on insulator structure with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2023·Granted Mar 26, 2024·0 cites·31 claims
- 2082US11887885B2Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2022·Granted Jan 30, 2024·0 cites·40 claims
- 2182US8143078B2Methods for monitoring the amount of contamination imparted into semiconductor wafers during wafer processingLIBBERT JEFFREY L·Filed 2010·Granted Mar 27, 2012·4 cites·8 claims
- 2281US9925755B2Clamping apparatus for cleaving a bonded wafer structure and methods for cleavingSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Mar 27, 2018·2 cites·19 claims
- 2379US8853054B2Method of manufacturing silicon-on-insulator wafersZHANG GUOQIANG·Filed 2012·Granted Oct 7, 2014·6 cites·16 claims
- 2476US11626318B2Radio frequency silicon on insulator structure with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·35 claims
- 2576US10546771B2High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiencySUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2017·Granted Jan 28, 2020·1 cites·37 claims
- 2675US11587825B2Method of preparing an isolation region in a high resistivity silicon-on-insulator substrateGLOBALWAFERS CO LTD·Filed 2020·Granted Feb 21, 2023·0 cites·16 claims
- 2775US11380576B2Method of preparing an isolation region in a high resistivity silicon-on-insulator substrateGLOBALWAFERS CO LTD·Filed 2020·Granted Jul 5, 2022·0 cites·16 claims
- 2873US11239107B2High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiencyGLOBALWAFERS CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·19 claims
- 2973US6808781B2Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the sameMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Oct 26, 2004·19 cites·48 claims
- 3071US10832937B1High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiencyGLOBALWAFERS CO LTD·Filed 2020·Granted Nov 10, 2020·0 cites·20 claims
- 3170US11699615B2High resistivity semiconductor-on-insulator wafer and a method of manufactureGLOBALWAFERS CO LTD·Filed 2021·Granted Jul 11, 2023·0 cites·11 claims
- 3270US7201800B2Process for making silicon wafers with stabilized oxygen precipitate nucleation centersMEMC ELECTRONIC MATERIALS·Filed 2004·Granted Apr 10, 2007·15 cites·28 claims
- 3367US10825718B2Method of preparing an isolation region in a high resistivity silicon-on-insulator substrateGLOBALWAFERS CO LTD·Filed 2019·Granted Nov 3, 2020·0 cites·22 claims
- 3467US10741437B2High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiencyGLOBALWAFERS CO LTD·Filed 2019·Granted Aug 11, 2020·0 cites·20 claims
- 3566US11075109B2Radio frequency silicon on insulator structure with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2019·Granted Jul 27, 2021·0 cites·31 claims
- 3666US10483152B2High resistivity semiconductor-on-insulator wafer and a method of manufacturingSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Nov 19, 2019·1 cites·28 claims
- 3766US9281233B2Method for low temperature layer transfer in the preparation of multilayer semiconductor devicesSUNEDISON INC·Filed 2013·Granted Mar 8, 2016·2 cites·13 claims
- 3866US6930375B2Silicon on insulator structure having an epitaxial layer and intrinsic getteringMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Aug 16, 2005·11 cites·34 claims
- 3965US10784146B2Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stressGLOBALWAFERS CO LTD·Filed 2019·Granted Sep 22, 2020·0 cites·16 claims
- 4065US6635587B1Method for producing czochralski silicon free of agglomerated self-interstitial defectsMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Oct 21, 2003·6 cites·55 claims
- 4164US10475695B2High resistivity silicon-on-insulator substrate comprising an isolation regionSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Nov 12, 2019·0 cites·16 claims
- 4263US10381260B2Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layersSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Aug 13, 2019·1 cites·18 claims
- 4362US10269617B2High resistivity silicon-on-insulator substrate comprising an isolation regionSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2017·Granted Apr 23, 2019·0 cites·17 claims
- 4462US9343379B2Method to delineate crystal related defectsLIBBERT JEFFREY L·Filed 2011·Granted May 17, 2016·1 cites·11 claims
- 4561US10658227B2Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stressGLOBALWAFERS CO LTD·Filed 2018·Granted May 19, 2020·0 cites·56 claims
- 4661US10490464B2Methods for assessing semiconductor structuresSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Nov 26, 2019·0 cites·20 claims
- 4760US2025293073A1Reclaimable donor substrates for use in preparing multiple silicon-on-insulator structuresGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 4858US11139198B2High resistivity semiconductor-on-insulator wafer and a method of manufacturingGLOBALWAFERS CO LTD·Filed 2018·Granted Oct 5, 2021·0 cites·32 claims
- 4958US10796946B2Method of manufacture of a semiconductor on insulator structureSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2019·Granted Oct 6, 2020·0 cites·26 claims
- 5055US2025069945A1Methods of preparing silicon-on-insulator structures using epitaxial wafersGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 64 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Jeffrey L. Libbert files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →