Inventor · disambiguated record
Scott Balster
Also filed as: BALSTER SCOTT · BALSTER SCOTT G · BALSTER SCOTT GERARD
40 granted patents·7 pending applications·1,242 citations·filing 2001–2017
98Inventor score
Files withTEXAS INSTRUMENTS INC34BABCOCK JEFFREY A4EL-KAREH BADIH2BALSTER SCOTT GERARD1DIRNECKER CHRISTOPH1
Top patents by PatentIndex Score
47 records- 0198US8129246B2Advanced CMOS using super steep retrograde wellsBABCOCK JEFFREY A·Filed 2011·Granted Mar 6, 2012·120 cites·1 claims
- 0298US7883977B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2009·Granted Feb 8, 2011·124 cites·4 claims
- 0398US7655523B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2007·Granted Feb 2, 2010·124 cites·10 claims
- 0498US7501324B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 10, 2009·121 cites·9 claims
- 0598US7199430B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2006·Granted Apr 3, 2007·138 cites·3 claims
- 0698US7064399B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2001·Granted Jun 20, 2006·148 cites·5 claims
- 0796US8247300B2Control of dopant diffusion from buried layers in bipolar integrated circuitsBABCOCK JEFFREY A·Filed 2009·Granted Aug 21, 2012·97 cites·4 claims
- 0894US6407425B1Programmable neuron MOSFET on SOITEXAS INSTRUMENTS INC·Filed 2001·Granted Jun 18, 2002·87 cites·24 claims
- 0991US6391707B1Method of manufacturing a zero mask high density metal/insulator/metal capacitorTEXAS INSTRUMENTS INC·Filed 2001·Granted May 21, 2002·62 cites·68 claims
- 1090US9431480B1Diluted drift layer with variable stripe widths for power transistorsTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 30, 2016·5 cites·13 claims
- 1186US8703568B2Advanced CMOS using super steep retrograde wellsBABCOCK JEFFREY A·Filed 2012·Granted Apr 22, 2014·4 cites·3 claims
- 1285US8450179B2Semiconductor device having a first bipolar device and a second bipolar device and method for fabricationEL-KAREH BADIH·Filed 2007·Granted May 28, 2013·12 cites·19 claims
- 1385US7422972B2On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuitsTEXAS INSTRUMENTS INC·Filed 2005·Granted Sep 9, 2008·13 cites·4 claims
- 1485US6958523B2On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuitsTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 25, 2005·38 cites·6 claims
- 1585US6646323B2Zero mask high density metal/insulator/metal capacitorTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 11, 2003·45 cites·41 claims
- 1683US6770952B2Integrated process for high voltage and high performance silicon-on-insulator bipolar devicesTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 3, 2004·29 cites·8 claims
- 1776US6838348B2Integrated process for high voltage and high performance silicon-on-insulator bipolar devicesTEXAS INSTRUMENTS INC·Filed 2004·Granted Jan 4, 2005·18 cites·11 claims
- 1872US7312119B2Stacked capacitor and method of fabricating sameTEXAS INSTRUMENTS INC·Filed 2006·Granted Dec 25, 2007·5 cites·6 claims
- 1970US8012842B2Method for fabricating isolated integrated semiconductor structuresTEXAS INSTRUMENTS INC·Filed 2008·Granted Sep 6, 2011·4 cites·9 claims
- 2068US10937905B2Transistor having double isolation with one floating isolationTEXAS INSTRUMENTS INC·Filed 2014·Granted Mar 2, 2021·2 cites·20 claims
- 2165US7670890B2Silicide block isolated junction field effect transistor source, drain and gateTEXAS INSTRUMENTS DEUTSCHLAND·Filed 2006·Granted Mar 2, 2010·3 cites·34 claims
- 2262US7498639B2Integrated BiCMOS semiconductor circuitTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 3, 2009·2 cites·4 claims
- 2361US6894366B2Bipolar junction transistor with a counterdoped collector regionTEXAS INSTRUMENTS INC·Filed 2001·Granted May 17, 2005·9 cites·5 claims
- 2458US9985028B2Diluted drift layer with variable stripe widths for power transistorsTEXAS INSTRUMENTS INC·Filed 2017·Granted May 29, 2018·0 cites·13 claims
- 2558US7130182B2Stacked capacitor and method for fabricating sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 31, 2006·6 cites·9 claims
- 2657US7217322B2Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layerTEXAS INSTRUMENTS INC·Filed 2004·Granted May 15, 2007·5 cites·15 claims
- 2756US9653577B2Diluted drift layer with variable stripe widths for power transistorsTEXAS INSTRUMENTS INC·Filed 2016·Granted May 16, 2017·0 cites·5 claims
- 2856US8847359B2High voltage bipolar transistor and method of fabricationBALSTER SCOTT GERARD·Filed 2009·Granted Sep 30, 2014·2 cites·15 claims
- 2954US10319809B2Structures to avoid floating resurf layer in high voltage lateral devicesTEXAS INSTRUMENTS INC·Filed 2017·Granted Jun 11, 2019·0 cites·19 claims
- 3054US7227241B2Integrated stacked capacitor and method of fabricating sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Jun 5, 2007·4 cites·7 claims
- 3154US6806159B2Method for manufacturing a semiconductor device with sinker contact regionTEXAS INSTRUMENTS INC·Filed 2002·Granted Oct 19, 2004·6 cites·13 claims
- 3251US7736986B2Integrated stacked capacitor and method of fabricating sameTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 15, 2010·0 cites·4 claims
- 3348US7772057B2Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protectionTEXAS INSTRUMENTS INC·Filed 2006·Granted Aug 10, 2010·0 cites·11 claims
- 3448US7164186B2Structure of semiconductor device with sinker contact regionTEXAS INSTRUMENTS INC·Filed 2004·Granted Jan 16, 2007·3 cites·8 claims
- 3547US9876071B2Structures to avoid floating RESURF layer in high voltage lateral devicesTEXAS INSTRUMENTS INC·Filed 2015·Granted Jan 23, 2018·0 cites·11 claims
- 3646US8294218B2Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protectionEL-KAREH BADIH·Filed 2010·Granted Oct 23, 2012·0 cites·10 claims
- 3745US7192838B2Method of producing complementary SiGe bipolar transistorsTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 20, 2007·2 cites·5 claims
- 3845US6774455B2Semiconductor device with a collector contact in a depressed well-regionTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 10, 2004·2 cites·9 claims
- 3945US2015118861A1Czochralski substrates having reduced oxygen donorsTEXAS INSTRUMENTS INC·Filed 2014·Application pending·0 cites
- 4044US7144789B2Method of fabricating complementary bipolar transistors with SiGe base regionsTEXAS INSTRUMENTS INC·Filed 2004·Granted Dec 5, 2006·2 cites·12 claims
- 4142US2007018225A1Integrated Stacked Capacitor and Method of Fabricating SameDIRNECKER CHRISTOPH·Filed 2006·Application pending·0 cites
- 4242US2005250289A1Control of dopant diffusion from buried layers in bipolar integrated circuitsBABCOCK JEFFREY A·Filed 2005·Application pending·0 cites
- 4338US2004209433A1Method for manufacturing and structure of semiconductor device with shallow trench collector contact regionFiled 2004·Application pending·0 cites
- 4437US7118981B2Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistorTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 10, 2006·0 cites·19 claims
- 4536US2005118771A1Control of phosphorus profile by carbon in-situ doping for high performance vertical PNP transistorFiled 2004·Application pending·0 cites
- 4633US2003080394A1Control of dopant diffusion from polysilicon emitters in bipolar integrated circuitsFiled 2002·Application pending·0 cites
- 4732US2003082882A1Control of dopant diffusion from buried layers in bipolar integrated circuitsFiled 2002·Application pending·0 cites
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