Method for manufacturing and structure of semiconductor device with shallow trench collector contact region

Abstract

A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. At least part of the active region is removed to form a shallow trench opening. A dielectric layer is formed proximate the active region at least partially within the shallow trench opening. At least part of the dielectric layer is removed to form a collector contact region. A collector contact may be formed at the collector contact region. The collector contact may be operable to electrically contact the buried layer.

1 . A method for manufacturing a semiconductor device, comprising: 
 forming a buried layer of a semiconductor substrate;    forming an active region adjacent at least a portion of the buried layer;    removing at least part of the active region to form a shallow trench opening;    forming a dielectric layer proximate the active region at least partially within the shallow trench opening; and    removing at least part of the dielectric layer to form a collector contact region.    
     
     
         2 . The method of  claim 1 , further comprising forming a collector contact at the collector contact region, the collector contact operable to electrically contact the buried layer.  
     
     
         3 . The method of  claim 1 , wherein the collector contact region has a depth of approximately 3,000 to 10,000 angstroms.  
     
     
         4 . The method of  claim 1 , wherein removing at least part of the dielectric layer comprises: 
 masking a first portion of the dielectric layer; and    etching a second portion of the dielectric layer to form a collector contact region.    
     
     
         5 . The method of  claim 1 , wherein removing at least part of the dielectric layer comprises forming a shallow trench isolation structure adjacent at least a portion of the active region.  
     
     
         6 . The method of  claim 1 , further comprising forming a first isolation structure adjacent at least a portion of the buried layer.  
     
     
         7 . The method of  claim 6 , wherein the first isolation structure comprises a deep trench isolation structure.  
     
     
         8 . The method of  claim 7 , wherein the deep trench isolation structure comprises a liner oxide.  
     
     
         9 . The method of  claim 1 , wherein removing at least part of the dielectric layer comprises forming a shallow trench isolation spacer adjacent at least a portion of the active region.  
     
     
         10 . The method of  claim 1 , further comprising forming an oxide layer adjacent at least a portion of the buried layer.  
     
     
         11 . The method of  claim 1 , further comprising forming an emitter contact of the semiconductor device proximate the active region.  
     
     
         12 - 20  (cancelled).