Inventor · disambiguated record
Lianzhong Yu
Also filed as: YU LIANZHONG
21 granted patents·7 pending applications·357 citations·filing 1999–2020
95Inventor score
Files withHONEYWELL INT INC11INPUT OUTPUT INC8YU LIANZHONG3LAFOND PETER H2CHINESE ACAD OF SCIENCES INST OF GEOLOGY AND GEOPHYSICS1
Top patents by PatentIndex Score
28 records- 0195US7024934B2Vibrating beam accelerometerHONEYWELL INT INC·Filed 2005·Granted Apr 11, 2006·32 cites·20 claims
- 0293US7238999B2High performance MEMS packaging architectureHONEYWELL INT INC·Filed 2005·Granted Jul 3, 2007·42 cites·12 claims
- 0390US7469588B2MEMS vertical comb drive with improved vibration performanceHONEYWELL INT INC·Filed 2006·Granted Dec 30, 2008·24 cites·9 claims
- 0489US6454421B2Dual axis micro machined mirror deviceINPUT OUTPUT INC·Filed 2001·Granted Sep 24, 2002·38 cites·25 claims
- 0589US6315423B1Micro machined mirrorINPUT OUTPUT INC·Filed 1999·Granted Nov 13, 2001·85 cites·29 claims
- 0688US8685776B2Wafer level packaged MEMS deviceLAFOND PETER H·Filed 2010·Granted Apr 1, 2014·11 cites·8 claims
- 0786US7479402B2Comb structure fabrication methods and systemsHONEYWELL INT INC·Filed 2006·Granted Jan 20, 2009·13 cites·15 claims
- 0883US6938334B2Vibrating beam accelerometer two-wafer fabrication processHONEYWELL INT INC·Filed 2003·Granted Sep 6, 2005·24 cites·20 claims
- 0982US6805008B2Accelerometer with folded beamsINPUT OUTPUT INC·Filed 2001·Granted Oct 19, 2004·45 cites·46 claims
- 1068US7442589B2System and method for uniform multi-plane silicon oxide layer formation for optical applicationsHONEYWELL INT INC·Filed 2006·Granted Oct 28, 2008·3 cites·13 claims
- 1166US7482192B2Method of making dimple structure for prevention of MEMS device stictionHONEYWELL INT INC·Filed 2006·Granted Jan 27, 2009·5 cites·20 claims
- 1265US7152473B1Integrated and multi-axis sensor assembly and packagingINPUT OUTPUT INC·Filed 2000·Granted Dec 26, 2006·18 cites·32 claims
- 1363US7976714B2Single SOI wafer accelerometer fabrication processHONEYWELL INT INC·Filed 2008·Granted Jul 12, 2011·1 cites·3 claims
- 1459US10647570B2Fabrication process for a symmetrical MEMS accelerometerCHINESE ACADEMY OF SCIENCES INST OF GEOLOGY·Filed 2019·Granted May 12, 2020·0 cites·10 claims
- 1558US10392247B2Fabrication process for a symmetrical MEMS accelerometerCHINESE ACADEMY OF SCIENCES INST OF GEOLOGY AND GEOPHYSICS·Filed 2017·Granted Aug 27, 2019·0 cites·5 claims
- 1652US9759740B2Symmetrical MEMS accelerometer and its fabrication processCHINESE ACAD OF SCIENCES INST OF GEOLOGY AND GEOPHYSICS·Filed 2015·Granted Sep 12, 2017·0 cites·12 claims
- 1751US2009085194A1Wafer level packaged mems deviceHONEYWELL INT INC·Filed 2007·Application pending·0 cites
- 1850US8057690B2Single silicon-on-insulator (SOI) wafer accelerometer fabricationYU LIANZHONG·Filed 2009·Granted Nov 15, 2011·1 cites·14 claims
- 1949US10954119B2MEMS micromirror and MEMS optical switchINST OF GEOLOGY AND GEOPHYSICS CHINESE ACADEMY OF SCIENCES IGGCAS·Filed 2020·Granted Mar 23, 2021·0 cites·8 claims
- 2044US6617098B1Merged-mask micro-machining processINPUT OUTPUT INC·Filed 1999·Granted Sep 9, 2003·10 cites·55 claims
- 2144US2009283917A1Systems and methods for vertical stacked semiconductor devicesHONEYWELL INT INC·Filed 2008·Application pending·0 cites
- 2243US2009001499A1Thick active layer for mems device using wafer dissolve processHONEYWELL INT INC·Filed 2007·Application pending·0 cites
- 2339US8481354B2Methods of creating a micro electro-mechanical systems accelerometer using a single double silicon-on-insulator waferYU LIANZHONG·Filed 2010·Granted Jul 9, 2013·0 cites·5 claims
- 2439US2004255675A1Accelerometer with folded beamsINPUT OUTPUT INC·Filed 2004·Application pending·0 cites
- 2536US6458513B1Temporary bridge for micro machined structuresINPUT OUTPUT INC·Filed 1999·Granted Oct 1, 2002·5 cites·12 claims
- 2634US2007246665A1Mechanical isolation for mems devicesLAFOND PETER H·Filed 2006·Application pending·0 cites
- 2734US2002104379A1Accelerometer with re-entrant groovesINPUT OUTPUT INC·Filed 2001·Application pending·0 cites
- 2832US2007004056A1Systems and methods for direct silicon epitaxy thickness measuringYU LIANZHONG·Filed 2005·Application pending·0 cites
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