Inventor · disambiguated record
Kazuo Hashimi
Also filed as: HASHIMI KAZUO
11 granted patents·95 citations·filing 1993–2019
87Inventor score
Top patents by PatentIndex Score
11 records- 0181US5830807ASuccessive dry etching of alternating laminateFUJITSU LTD·Filed 1997·Granted Nov 3, 1998·66 cites·11 claims
- 0273US7642192B2Semiconductor device and fabrication method thereofFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Jan 5, 2010·3 cites·13 claims
- 0372US8809919B2Semiconductor device with inverted trapezoidal cross sectional profile in surface areas of substrateHASHIMI KAZUO·Filed 2012·Granted Aug 19, 2014·2 cites·4 claims
- 0472US8163572B2Method for evaluating impurity distribution under gate electrode without damaging silicon substrateHASHIMI KAZUO·Filed 2009·Granted Apr 24, 2012·3 cites·8 claims
- 0562US6528413B2Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2001·Granted Mar 4, 2003·9 cites·26 claims
- 0657US8114764B2Semiconductor device and fabrication method thereofHASHIMI KAZUO·Filed 2009·Granted Feb 14, 2012·0 cites·9 claims
- 0752US8592951B2Semiconductor wafer having W-shaped dummy metal filling section within monitor regionHASHIMI KAZUO·Filed 2012·Granted Nov 26, 2013·0 cites·3 claims
- 0852US7691649B2Method for evaluating impurity distribution under gate electrode without damaging silicon substrateFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Apr 6, 2010·0 cites·6 claims
- 0949US11075140B2Heat conduction structure or semiconductor apparatusBESSHO TAKESHI·Filed 2019·Granted Jul 27, 2021·0 cites·9 claims
- 1038US8685265B2Manufacturing method of semiconductor device and semiconductor manufacturing apparatusNAKAO YOSHIYUKI·Filed 2012·Granted Apr 1, 2014·0 cites·11 claims
- 1137US5322589AProcess and apparatus for recrystallization of semiconductor layerFUJITSU LTD·Filed 1993·Granted Jun 21, 1994·12 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →