Inventor · disambiguated record
Takehiko Fujita
Also filed as: FUJITA TAKEHIKO
20 granted patents·4 pending applications·459 citations·filing 2002–2021
94Inventor score
Files withTOKYO ELECTRON LTD9DOWA ELECTRONICS MATERIALS CO LTD8HASEBE KAZUHIDE3FUJITA TAKEHIKO1IM DONG-HYUN1
Top patents by PatentIndex Score
24 records- 0198US7648895B2Vertical CVD apparatus for forming silicon-germanium filmTOKYO ELECTRON LTD·Filed 2008·Granted Jan 19, 2010·337 cites·14 claims
- 0296US7906168B2Film formation method and apparatus for forming silicon oxide filmTOKYO ELECTRON LTD·Filed 2007·Granted Mar 15, 2011·50 cites·10 claims
- 0389US10147842B2Method of producing III nitride semiconductor light-emitting deviceDOWA ELECTRONICS MATERIALS CO LTD·Filed 2015·Granted Dec 4, 2018·5 cites·10 claims
- 0489US7494943B2Method for using film formation apparatusTOKYO ELECTRON LTD·Filed 2006·Granted Feb 24, 2009·10 cites·20 claims
- 0586US10193016B2III-nitride semiconductor light emitting device and method of producing the sameDOWA ELECTRONICS MATERIALS CO LTD·Filed 2016·Granted Jan 29, 2019·5 cites·19 claims
- 0683US7795158B2Oxidation method and apparatus for semiconductor processTOKYO ELECTRON LTD·Filed 2007·Granted Sep 14, 2010·7 cites·11 claims
- 0781US10283671B2Method of producing III nitride semiconductor light-emitting deviceDOWA ELECTRONICS MATERIALS CO LTD·Filed 2018·Granted May 7, 2019·2 cites·3 claims
- 0879US8980679B2Apparatus and methods for forming phase change layer and method of manufacturing phase change memory deviceIM DONG-HYUN·Filed 2009·Granted Mar 17, 2015·6 cites·9 claims
- 0979US8168270B2Film formation method and apparatus for semiconductor processHASEBE KAZUHIDE·Filed 2007·Granted May 1, 2012·3 cites·20 claims
- 1074US12507504B2Group III nitride semiconductor light-emitting element and method of manufacturing sameDOWA ELECTRONICS MATERIALS CO LTD·Filed 2021·Granted Dec 23, 2025·0 cites·12 claims
- 1174US9882088B2III nitride semiconductor light-emitting deviceDOWA ELECTRONICS MATERIALS CO LTD·Filed 2016·Granted Jan 30, 2018·2 cites·5 claims
- 1272US7179334B2System and method for performing semiconductor processing on substrate being processedTOKYO ELECTRON LTD·Filed 2002·Granted Feb 20, 2007·14 cites·11 claims
- 1371US11024769B2Group III nitride semiconductor light-emitting element and method of manufacturing sameDOWA ELECTRONICS MATERIALS CO LTD·Filed 2019·Granted Jun 1, 2021·0 cites·3 claims
- 1467US7938080B2Method for using film formation apparatusTOKYO ELECTRON LTD·Filed 2008·Granted May 10, 2011·8 cites·5 claims
- 1560US7273818B2Film formation method and apparatus for semiconductor processTOKYO ELECTRON LTD·Filed 2004·Granted Sep 25, 2007·7 cites·16 claims
- 1655US10573783B2Group III nitride semiconductor light-emitting element and method of manufacturing sameDOWA ELECTRONICS MATERIALS CO LTD·Filed 2016·Granted Feb 25, 2020·0 cites·3 claims
- 1751US7211514B2Heat-processing method for semiconductor process under a vacuum pressureTOKYO ELECTRON LTD·Filed 2004·Granted May 1, 2007·3 cites·14 claims
- 1849US2005181586A1Vertical CVD apparatus for forming silicon-germanium filmFiled 2004·Application pending·0 cites
- 1948US8153451B2System and method for performing semiconductor processing on target substrateSAKAMOTO KOICHI·Filed 2007·Granted Apr 10, 2012·0 cites·14 claims
- 2047US2010319619A1Oxidation method and apparatus for semiconductor processTOKYO ELECTRON LTD·Filed 2010·Application pending·0 cites
- 2146US8124181B2Oxidation method providing parallel gas flow over substrates in a semiconductor processHASEBE KAZUHIDE·Filed 2007·Granted Feb 28, 2012·0 cites·14 claims
- 2240US2006021570A1Reduction in size of hemispherical grains of hemispherical grained filmHASEBE KAZUHIDE·Filed 2005·Application pending·0 cites
- 2339US10062806B2Method of producing III nitride semiconductor light-emitting device and III nitride semiconductor light-emitting deviceDOWA ELECTRONICS MATERIALS CO LTD·Filed 2015·Granted Aug 28, 2018·0 cites·3 claims
- 2438US2006099805A1Heat treating system and heat treating methodFUJITA TAKEHIKO·Filed 2003·Application pending·0 cites
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