Oxidation method and apparatus for semiconductor process

Abstract

In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.

1 - 10 . (canceled) 
     
     
         11 . An oxidation apparatus for a semiconductor process comprising:
 a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction;   a gas supply system configured to supply an oxidizing gas and a deoxidizing gas to the process field respectively through first and second gas supply ports disposed adjacent to the target substrates on one side of the process field, each of the first and second gas supply ports being present over a length corresponding to the process field in a vertical direction;   a gas an exciting mechanism configured to turn the oxidizing gas into plasma while the oxidizing gas is being supplied, the gas mechanism including a plasma generation area present in a recess provided to the process container over a length corresponding to the process field in a vertical direction such that the first gas supply port is located in the recess, and an electrode extending along the plasma generation area and configured to be supplied with an RF power for plasma generation;   an exhaust system configured to exhaust gas from the process field through an exhaust port disposed opposite to the first and second gas supply ports with the process field interposed therebetween; and   a control section configured to control an operation of the apparatus,   wherein the control section includes a storage medium storing program instructions for execution on a processor, which, when executed by the processor, cause the apparatus to conduct a sequence that comprises   supplying the oxidizing gas and the deoxidizing gas to the process field with the target substrates placed therein, respectively through the first and second gas supply ports,   turning the oxidizing gas into plasma by the gas exciting mechanism to activate the oxidizing gas, while the oxidizing gas is being supplied,   exhausting gas from the process field through the exhaust port to cause the oxidizing gas and the deoxidizing gas to flow along surfaces of the target substrates,   causing the oxidizing gas and the deoxidizing gas to react with each other to generate oxygen radicals and hydroxyl group radicals within the process field, and   performing an oxidation process on the surfaces of the target substrates by use of the oxygen radicals and the hydroxyl group radicals.   
     
     
         12 . The apparatus according to  claim 11 , wherein the exhaust port is present over a length corresponding to the process field in a vertical direction. 
     
     
         13 - 16 . (canceled) 
     
     
         17 . The apparatus according to  claim 11 , wherein the second gas supply port is located between the recess and the process field, and the sequence does not comprise turning the deoxidizing gas into plasma by the gas exciting mechanism. 
     
     
         18 . The apparatus according to  claim 11 , wherein the second gas supply port is located in the recess, and the sequence further comprises turning the deoxidizing gas into plasma by the gas exciting mechanism. 
     
     
         19 . The apparatus according to  claim 11 , wherein the oxidizing gas comprises one or more gases selected from the group consisting of O 2 , N 2 O, NO, NO 2 , and O 3 . 
     
     
         20 . The apparatus according to  claim 11 , wherein the deoxidizing gas comprises one or more gases selected from the group consisting of H 2 , NH 3 , carbon hydride, HCI, D 2  (D indicates deuterium, hereinafter), ND 3 , carbon deuterium, and DCI. 
     
     
         21 . The apparatus according to  claim 11 , wherein the surfaces of the target substrates are defined by a silicon or silicon oxide layer. 
     
     
         22 . The apparatus according to  claim 21 , wherein the oxidation process is arranged to use a process pressure of 466 Pa (3.5 Ton) or less. 
     
     
         23 . The apparatus according to  claim 21 , wherein the oxidation process is arranged to use a process temperature of from room temperature to 1,050° C. 
     
     
         24 . The apparatus according to  claim 21 , wherein the oxidizing gas is O 2  and the deoxidizing gas is H 2 . 
     
     
         25 . The apparatus according to  claim 24 , wherein the oxidation process is arranged to use a process temperature of 400 to 750° C., and a process pressure of 466 Pa (3.5 Torr) or less. 
     
     
         26 . An oxidation apparatus for a semiconductor process comprising:
 a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction;   a gas supply system configured to supply an oxidizing gas and a deoxidizing gas to the process field respectively through first and second gas supply ports disposed adjacent to the target substrates on one side of the process field, each of the first and second gas supply ports being present over a length corresponding to the process field in a vertical direction;   a gas exciting mechanism configured to turn the oxidizing gas into plasma while the oxidizing gas is being supplied, the gas exciting mechanism including a plasma generation area present in a recess provided to the process container over a length corresponding to the process field in a vertical direction such that the first gas supply port is located in the recess, and an electrode extending along the plasma generation area and configured to be supplied with RF power for plasma generation;   an exhaust system configured to exhaust gas from the process field through an exhaust port disposed opposite to the first and second supply ports with the process field interposed therebetween; and   means for supplying the oxidizing gas and the deoxidizing gas to the process field with the target substrates placed therein, while turning the oxidizing gas into plasma by the gas exciting mechanism to activate the oxidizing gas, and causing the oxidizing gas and the deoxidizing gas to react with each other to generate oxygen radicals and hydroxyl group radicals within the process field, so as to perform an oxidation process on the surfaces of the target substrates by use of the oxygen radicals and the hydroxyl group radicals.