Inventor · disambiguated record
Nan-Hsiung Tsai
Also filed as: TSAI NAN-HSIUNG
11 granted patents·2 pending applications·146 citations·filing 1981–2006
90Inventor score
Files withMOSEL VITELIC INC4MOS ELECTRONICS CORP3GRACE SEMICONDUCTOR MFG CORP2INTEL CORP1MOS ELECTRONICS1
Top patents by PatentIndex Score
13 records- 0182US4910168AMethod to reduce silicon area for via formationMOS ELECTRONICS CORP·Filed 1988·Granted Mar 20, 1990·46 cites·15 claims
- 0277US5679595ASelf-registered capacitor bottom plate-local interconnect scheme for DRAMMOSEL VITELIC INC·Filed 1996·Granted Oct 21, 1997·37 cites·12 claims
- 0373US4446613AIntegrated circuit resistor and method of fabricationINTEL CORP·Filed 1981·Granted May 8, 1984·24 cites·5 claims
- 0462US5792686AMethod of forming a bit-line and a capacitor structure in an integrated circuitMOSEL VITELIC INC·Filed 1996·Granted Aug 11, 1998·15 cites·23 claims
- 0561US7371664B2Process for wafer thinningGRACE SEMICONDUCTOR MFG CORP·Filed 2006·Granted May 13, 2008·1 cites·3 claims
- 0644US7282417B1Ion doping method to form source and drainGRACE SEMICONDUCTOR MFG CORP·Filed 2006·Granted Oct 16, 2007·0 cites·7 claims
- 0741US5084420AResistor with side wall contactMOS ELECTRONICS CORP·Filed 1990·Granted Jan 28, 1992·9 cites·1 claims
- 0838US2008014696A1Trench capacitor and method of manufacturing the sameTSAI NAN-HSIUNG·Filed 2006·Application pending·0 cites
- 0937US6271556B1High density memory structureMOSEL VITELIC INC·Filed 1998·Granted Aug 7, 2001·3 cites·7 claims
- 1037US5880496ASemiconductor having self-aligned polysilicon electrode layerMOSEL VITELIC INC·Filed 1997·Granted Mar 9, 1999·4 cites·12 claims
- 1136US2001028075A1High density memory structureFiled 2001·Application pending·0 cites
- 1228US4992773AResistor with side wall contactMOS ELECTRONICS CORP·Filed 1988·Granted Feb 12, 1991·0 cites·5 claims
- 1327US5019534AProcess of making self-aligned contact using differential oxidationMOS ELECTRONICS·Filed 1989·Granted May 28, 1991·7 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →