Inventor · disambiguated record
Wen-Pin Peng
Also filed as: PENG WEN PIN
11 granted patents·1 pending application·48 citations·filing 2012–2017
86Inventor score
Files withGLOBALFOUNDRIES INC12
Top patents by PatentIndex Score
12 records- 0196US9385124B1Methods of forming reduced thickness spacers in CMOS based integrated circuit productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 5, 2016·19 cites·29 claims
- 0295US9396995B1MOL contact metallization scheme for improved yield and device reliabilityGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 19, 2016·15 cites·17 claims
- 0388US9711619B1Stress memorization and defect suppression techniques for NMOS transistor devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 18, 2017·5 cites·5 claims
- 0479US9385030B2Spacer to prevent source-drain contact encroachmentGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 5, 2016·4 cites·12 claims
- 0571US9905673B2Stress memorization and defect suppression techniques for NMOS transistor devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 27, 2018·1 cites·7 claims
- 0671US9607989B2Forming self-aligned NiSi placement with improved performance and yieldGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 28, 2017·2 cites·18 claims
- 0765US9704759B2Methods of forming CMOS based integrated circuit products using disposable spacersGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 11, 2017·1 cites·23 claims
- 0857US9123783B2Integrated circuits and methods of forming integrated circuits with interlayer dielectric protectionGLOBALFOUNDRIES INC·Filed 2012·Granted Sep 1, 2015·1 cites·16 claims
- 0947US10854472B2Method for forming a metal gate including de-oxidation of an oxidized surface of the metal gate utilizing a reducing agentGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 1, 2020·0 cites·7 claims
- 1047US9184288B2Semiconductor structures with bridging films and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 10, 2015·0 cites·20 claims
- 1140US10290634B2Multiple threshold voltages using fin pitch and profileGLOBALFOUNDRIES INC·Filed 2016·Granted May 14, 2019·0 cites·9 claims
- 1234US2017207118A1Self-aligned source/drain contact in replacement metal gate processGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Wen-Pin Peng files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →