Inventor · disambiguated record
Douglas J. Bonser
Also filed as: BONSER DOUGLAS · BONSER DOUGLAS J · BONSER DOUGLAS JAMES
33 granted patents·1 pending application·1,385 citations·filing 1994–2012
98Inventor score
Files withADVANCED MICRO DEVICES INC28BONSER DOUGLAS2AST RESEARCH INC1GLOBALFOUNDRIES INC1JOHNSON FRANK S1
Top patents by PatentIndex Score
34 records- 0198US6893967B1L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materialsADVANCED MICRO DEVICES INC·Filed 2004·Granted May 17, 2005·246 cites·16 claims
- 0298US6773998B1Modified film stack and patterning strategy for stress compensation and prevention of pattern distortion in amorphous carbon gate patterningADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 10, 2004·208 cites·22 claims
- 0396US6245581B1Method and apparatus for control of critical dimension using feedback etch controlADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 12, 2001·204 cites·26 claims
- 0496US5504328AEndpoint detection utilizing ultraviolet mass spectrometrySEMATECH INC·Filed 1994·Granted Apr 2, 1996·111 cites·21 claims
- 0594US7105399B1Selective epitaxial growth for tunable channel thicknessADVANCED MICRO DEVICES INC·Filed 2004·Granted Sep 12, 2006·103 cites·19 claims
- 0692US6750127B1Method for fabricating a semiconductor device using amorphous carbon having improved etch resistanceADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 15, 2004·61 cites·9 claims
- 0791US6764949B2Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 20, 2004·53 cites·18 claims
- 0891US6673635B1Method for alignment mark formation for a shallow trench isolation processADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 6, 2004·55 cites·14 claims
- 0991US6653735B1CVD silicon carbide layer as a BARC and hard mask for gate patterningADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 25, 2003·57 cites·3 claims
- 1089US8174055B2Formation of FinFET gate spacerBONSER DOUGLAS·Filed 2010·Granted May 8, 2012·12 cites·12 claims
- 1184US8268727B2Methods for fabricating FinFET semiconductor devices using planarized spacersJOHNSON FRANK S·Filed 2009·Granted Sep 18, 2012·13 cites·20 claims
- 1281US7985639B2Method for fabricating a semiconductor device having a semiconductive resistor structureGLOBALFOUNDRIES INC·Filed 2009·Granted Jul 26, 2011·8 cites·20 claims
- 1379US6900139B1Method for photoresist trim endpoint detectionADVANCED MICRO DEVICES INC·Filed 2002·Granted May 31, 2005·25 cites·29 claims
- 1479US6881616B1System for forming a semiconductor device and method thereof including implanting through a L shaped spacer to form source and drain regionsADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 19, 2005·24 cites·9 claims
- 1579US6797552B1Method for defect reduction and enhanced control over critical dimensions and profiles in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 28, 2004·22 cites·8 claims
- 1677US6979651B1Method for forming alignment features and back-side contacts with fewer lithography and etch stepsADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 27, 2005·19 cites·15 claims
- 1776US6365481B1Isotropic resistor protect etch to aid in residue removalADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 2, 2002·18 cites·20 claims
- 1872US7091106B2Method of reducing STI divot formation during semiconductor device fabricationADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 15, 2006·18 cites·7 claims
- 1967US8525234B2Formation of FinFET gate spacerBONSER DOUGLAS·Filed 2012·Granted Sep 3, 2013·2 cites·20 claims
- 2065US6913958B1Method for patterning a feature using a trimmed hardmaskADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 5, 2005·9 cites·5 claims
- 2165US6764947B1Method for reducing gate line deformation and reducing gate line widths in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 20, 2004·9 cites·13 claims
- 2263US7504326B2Use of scanning theme implanters and annealers for selective implantation and annealingADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 17, 2009·1 cites·4 claims
- 2363US6849530B2Method for semiconductor gate line dimension reductionADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 1, 2005·10 cites·6 claims
- 2460US5883625AArrangement system for object placement on windowsAST RESEARCH INC·Filed 1996·Granted Mar 16, 1999·39 cites·32 claims
- 2557US7223698B1Method of forming a semiconductor arrangement with reduced field-to active step heightADVANCED MICRO DEVICES INC·Filed 2005·Granted May 29, 2007·2 cites·16 claims
- 2657US6734088B1Control of two-step gate etch processADVANCED MICRO DEVICES INC·Filed 2000·Granted May 11, 2004·8 cites·11 claims
- 2757US6165906ASemiconductor topography employing a shallow trench isolation structure with an improved trench edgeADVANCED MICRO DEVICES INC·Filed 1999·Granted Dec 26, 2000·22 cites·20 claims
- 2855US6812077B1Method for patterning narrow gate linesADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 2, 2004·6 cites·5 claims
- 2951US7268066B2Method for semiconductor gate line dimension reductionADVANCED MICRO DEVICES INC·Filed 2004·Granted Sep 11, 2007·4 cites·11 claims
- 3049US7279386B2Method for forming a semiconductor arrangement with gate sidewall spacers of specific dimensionsADVANCED MICRO DEVICES INC·Filed 2004·Granted Oct 9, 2007·3 cites·12 claims
- 3149US6555397B1Dry isotropic removal of inorganic anti-reflective coating after poly gate etchingADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 29, 2003·4 cites·12 claims
- 3249US2010267237A1Methods for fabricating finfet semiconductor devices using ashable sacrificial mandrelsADVANCED MICRO DEVICES INC·Filed 2009·Application pending·0 cites
- 3343US7144785B2Method of forming isolation trench with spacer formationADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 5, 2006·2 cites·18 claims
- 3439US6309947B1Method of manufacturing a semiconductor device with improved isolation region to active region topographyADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 30, 2001·7 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →