Inventor · disambiguated record
Wenjuan Zhu
Also filed as: ZHU WENJUAN
26 granted patents·1 pending application·160 citations·filing 2005–2023
95Inventor score
Top patents by PatentIndex Score
27 records- 0192US8852985B2Graphene pressure sensorsCAI JIN·Filed 2012·Granted Oct 7, 2014·15 cites·8 claims
- 0292US8101474B2Structure and method of forming buried-channel graphene field effect deviceZHU WENJUAN·Filed 2010·Granted Jan 24, 2012·16 cites·15 claims
- 0392US7504700B2Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said methodIBM·Filed 2005·Granted Mar 17, 2009·26 cites·20 claims
- 0491US8901680B2Graphene pressure sensorsCAI JIN·Filed 2012·Granted Dec 2, 2014·14 cites·8 claims
- 0589US8519450B1Graphene-based non-volatile memoryZHU WENJUAN·Filed 2012·Granted Aug 27, 2013·8 cites·24 claims
- 0687US8557686B1Graphene-based non-volatile memoryZHU WENJUAN·Filed 2012·Granted Oct 15, 2013·7 cites·21 claims
- 0787US7718513B2Forming silicided gate and contacts from polysilicon germanium and structure formedIBM·Filed 2007·Granted May 18, 2010·14 cites·6 claims
- 0886US8735242B2Graphene-based eFuse deviceZHU WENJUAN·Filed 2012·Granted May 27, 2014·7 cites·25 claims
- 0986US8598634B1Graphene-based efuse deviceZHU WENJUAN·Filed 2012·Granted Dec 3, 2013·7 cites·18 claims
- 1085US7528027B1Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channelIBM·Filed 2008·Granted May 5, 2009·12 cites·20 claims
- 1185US7485510B2Field effect device including inverted V shaped channel region and method for fabrication thereofIBM·Filed 2006·Granted Feb 3, 2009·15 cites·1 claims
- 1280US9765392B2Graphene transistor gated by charges through a nanopore for bio-molecular sensing and DNA sequencingPENG HONGBO·Filed 2012·Granted Sep 19, 2017·1 cites·9 claims
- 1380US9758821B2Graphene transistor gated by charges through a nanopore for bio-molecular sensing and DNA sequencingPENG HONGBO·Filed 2012·Granted Sep 12, 2017·1 cites·8 claims
- 1480US8530886B2Nitride gate dielectric for graphene MOSFETAVOURIS PHAEDON·Filed 2011·Granted Sep 10, 2013·5 cites·26 claims
- 1578US10385390B2Graphene transistor gated by charges through a nanopore for bio-molecular sensing and DNA sequencingIBM·Filed 2017·Granted Aug 20, 2019·2 cites·20 claims
- 1676US8748871B2Graphene devices and semiconductor field effect transistors in 3D hybrid integrated circuitsAVOURIS PHAEDON·Filed 2012·Granted Jun 10, 2014·4 cites·8 claims
- 1776US8680511B2Bilayer gate dielectric with low equivalent oxide thickness for graphene devicesDIMITRAKOPOULOS CHRISTOS D·Filed 2012·Granted Mar 25, 2014·3 cites·27 claims
- 1871US9758822B2Graphene transistor gated by charges through a nanopore for bio-molecular sensing and DNA sequencingIBM·Filed 2014·Granted Sep 12, 2017·1 cites·6 claims
- 1971US8724402B2Graphene-based non-volatile memoryZHU WENJUAN·Filed 2012·Granted May 13, 2014·2 cites·18 claims
- 2059US9377431B2Heterojunction nanopore for sequencingGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 28, 2016·0 cites·7 claims
- 2158US9377432B2Heterojunction nanopore for sequencingGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 28, 2016·0 cites·13 claims
- 2254US11527648B2Transistors with switchable polarity and non-volatile configurationsUNIV ILLINOIS·Filed 2021·Granted Dec 13, 2022·0 cites·15 claims
- 2354US2024177542A1Vehicle parallel diagnosis method, apparatus, and system, coordinator, and mediumCHONGQING CHANGAN AUTOMOBILE CO LTD·Filed 2023·Application pending·0 cites
- 2447US11239320B2Classifier circuits with graphene transistorsUNIV ILLINOIS·Filed 2019·Granted Feb 1, 2022·0 cites·24 claims
- 2547US8569089B2Nano-devices formed with suspended graphene membraneZHU WENJUAN·Filed 2012·Granted Oct 29, 2013·0 cites·11 claims
- 2647US8564027B2Nano-devices formed with suspended graphene membraneZHU WENJUAN·Filed 2012·Granted Oct 22, 2013·0 cites·10 claims
- 2742US10236386B2Vertical hetero- and homo-junction tunnel field-effect transistorsUNIV ILLINOIS·Filed 2017·Granted Mar 19, 2019·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →