Inventor · disambiguated record
Johannes Lindner
Also filed as: LINDNER JOHANNES
8 granted patents·8 pending applications·107 citations·filing 2001–2019
83Inventor score
Top patents by PatentIndex Score
16 records- 0190US6536454B2Device for treating a disc-shaped objectSEZ AG·Filed 2001·Granted Mar 25, 2003·74 cites·12 claims
- 0287US9587312B2Gas inlet member of a CVD reactorSILVA HUGO·Filed 2012·Granted Mar 7, 2017·22 cites·13 claims
- 0378US7410670B2Process and apparatus for depositing single-component or multi-component layers and layer sequences using discontinuous injection of liquid and dissolved starting substances via a multi-channel injection unitAIXTRON AG·Filed 2006·Granted Aug 12, 2008·4 cites·19 claims
- 0461US12096210B2System for operating a waste container and method for transferring data from a waste containerEMZ HANAUER GMBH & CO KGAA·Filed 2019·Granted Sep 17, 2024·1 cites·17 claims
- 0561US8906456B2Apparatus and method for high-throughput chemical vapor depositionAIXTRON INC·Filed 2013·Granted Dec 9, 2014·0 cites·10 claims
- 0656US7732308B2Process for depositing layers containing silicon and germaniumAIXTRON INC·Filed 2005·Granted Jun 8, 2010·6 cites·29 claims
- 0754US2010012036A1Isolation for multi-single-wafer processing apparatusSILVA HUGO·Filed 2009·Application pending·0 cites
- 0853US8114480B2Method for self-limiting deposition of one or more monolayersBAUMANN PETER·Filed 2007·Granted Feb 14, 2012·0 cites·14 claims
- 0949US2008096369A1Apparatus and method for high-throughput chemical vapor depositionSTRZYZEWSKI PIOTR·Filed 2005·Application pending·0 cites
- 1045US2008274278A1Method for Depositing in Particular Metal Oxides by Means of Discontinuous Precursor InjectionBAUMANN PETER·Filed 2005·Application pending·0 cites
- 1144US11873162B2System for operating a refuse container and method for operating a refuse containerEMZ HANAUER GMBH & CO KGAA·Filed 2019·Granted Jan 16, 2024·0 cites·15 claims
- 1240US2016333479A1Apparatus and method for regulating the temperature in a process chamber of a cvd reactor using two temperature sensor devicesAIXTRON SE·Filed 2014·Application pending·0 cites
- 1339US2007009659A1Process for the self-limiting deposition of one or more monolayersBAUMANN PETER·Filed 2006·Application pending·0 cites
- 1439US2004013800A1Device and method for feeding a liquid starting material, which has been brought into the gaseous state, into a CVD reactorFiled 2003·Application pending·0 cites
- 1539US2004035202A1Method and device for the metered delivery of low volumetric flows of liquidFiled 2003·Application pending·0 cites
- 1637US2003056728A1Method and device for depositing at least one precursor, which is in liquid or dissolved form, on at least one substrateFiled 2002·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →