Apparatus and method for high-throughput chemical vapor deposition

Abstract

The invention relates to a device for depositing at least one especially thin layer onto at least one substrate ( 9 ). Said device comprises a process chamber ( 1, 20, 11, 11′, 40, 21 ), housed in a reactor housing ( 2 ) and comprising a movable susceptor ( 20 ) which carries the at least one substrate ( 9 ). A plurality of gas feed lines ( 24 ) run into said process chamber and feed different process gases which comprise coat-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the coat-forming components onto the substrate ( 9 ). In order to increase the throughput of said method, the process chamber is provided with a plurality of separate deposition chambers ( 11, 11 ′) into which different gas feed lines ( 24, 24 ′) run, thereby feeding individual gas compositions. The substrate ( 9 ) can be fed to said chambers one after the other by moving the susceptor ( 20 ) and depositing different layers or layer components.

1 . Apparatus for depositing at least one in particular thin layer on at least one substrate ( 9 ), having a process chamber ( 1 ,  20 ,  11 ,  11 ′,  40 ,  21 ) which is disposed in a reactor housing ( 2 ) and has a movable susceptor ( 20 ) which carries the at least one substrate ( 9 ), into which process chamber there open out a plurality of gas feed lines ( 24 ) for the introduction of process gases which are different from one another and contain layer-forming components, it being possible for these to be introduced into the process chamber in successive process steps in order for the layer-forming components to be deposited on the substrate ( 9 ), characterized in that the process chamber has a plurality of deposition chambers ( 11 ,  11 ′) which are separate from one another and into which different gas feed lines ( 24 ,  24 ′) open out for the introduction of individual gas compositions, and to which the substrate ( 9 ) can be conveyed successively by the movement of the susceptor ( 20 ), in order for different layers or layer components to be deposited there. 
   
   
       2 . Apparatus according to  claim 1  or in particular according thereto, characterized in that the deposition chambers ( 11 ,  11 ′) are of cup form with openings located in a common plane ( 1 ′). 
   
   
       3 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that the opening plane ( 1 ′) of the deposition chambers ( 11 ,  11 ′) is located opposite the susceptor ( 20 ), with a gap ( 21 ) being formed in the process. 
   
   
       4 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized by at least one purging arrangement ( 40 ), in particular in the form of a purging chamber, disposed between two deposition chambers ( 11 ,  11 ′). 
   
   
       5 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized by gas-outlet nozzles, in particular for a sealing gas, disposed in the region between two adjacent deposition chambers ( 11 ,  11 ′) and/or purging chambers ( 40 ). 
   
   
       6 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that the susceptor ( 20 ) is of circular-disk form and can be driven in rotation, in particular in a stepwise manner, about its center. 
   
   
       7 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized by a gas-mixing and delivery system disposed upstream of the gas feed lines ( 24 ,  24 ′,  29 ). 
   
   
       8 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized by substrate holders ( 13 ) mounted on the susceptor ( 20 ) such that they can be driven in rotation. 
   
   
       9 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized by substrate holders ( 13 ) which can be raised by a lifting mechanism ( 16 ,  14 ). 
   
   
       10 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that at least one of the deposition and/or purging chambers ( 11 ,  11 ′,  40 ) has a gas outlet ( 35 ,  42 ,  43 ) which is connected, in particular, to a vacuum pump. 
   
   
       11 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that the deposition and/or purging chambers ( 11 ,  11 ′,  40 ) are recesses in a process-chamber top ( 1 ). 
   
   
       12 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that the deposition chambers ( 11 ,  11 ′) are disposed one behind the other in the direction of movement, in particular direction of rotation, of the susceptor ( 20 ) and are of the same shape and at equal spacing. 
   
   
       13 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that the deposition chambers ( 11 ,  11 ′) are disposed one behind the other in the direction of movement, and in particular the direction of rotation, of the susceptor ( 20 ) and are of different sizes and/or at different spacings from one another. 
   
   
       14 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that the shape, the size and position of the deposition chambers ( 11 ,  11 ′) are selected such that, in a certain rotary position of the susceptor ( 20 ), the substrates ( 9 ) disposed on the susceptor ( 20 ) are each assigned to an individually associated deposition chamber ( 11 ,  11 ′) and/or purging chamber ( 40 ) or an interspace between the chambers ( 11 ,  11 ′,  40 ). 
   
   
       15 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized by minimization of the dimensions of the deposition and/or purging chambers ( 11 ,  11 ′,  40 ), in particular in respect of the direction of movement/rotation of the susceptor, in respect of a maximum movement/rotational speed of the susceptor so as to ensure a minimal residence time of the substrates ( 9 ) in the region of each chamber ( 11 ,  11 ′,  40 ) in order for it to be possible to carry out the respective, in particular, different surface reactions and/or purging steps and/or pumping steps to a sufficient extent to achieve optimum layer depositions and optimum throughput. 
   
   
       16 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that the gas-mixing and delivery system has liquid sources, the liquid of the sources being constituted by liquid precursors, or solid precursors dissolved in a liquid, which are converted into a gas using a continuous vaporizer. 
   
   
       17 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that vaporization within the vaporizer takes place without any contact with any surface of the vaporizer and merely by way of heat absorption from the gas phase. 
   
   
       18 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that the gas feed lines are temperature-controlled. 
   
   
       19 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that the susceptor ( 20 ) can be displaced in the vertical direction in relation to the process-chamber top in particular for loading the substrate holder ( 13 ) with the substrate ( 9 ) and unloading the latter therefrom. 
   
   
       20 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that the lifting mechanism ( 16 ) has vertically oriented lifting pins ( 14 ) or lifting rings acting on the underside of the substrate ( 9 ). 
   
   
       21 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized by one or more heating arrangements for controlling the temperature of the susceptor ( 20 ) and/or of the walls of the deposition and/or purging chambers ( 11 ,  11 ′,  40 ). 
   
   
       22 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that the radial extent of the purging and/or deposition chamber ( 11 ,  11 ′,  40 ) is at least equal to the radial extent of a substrate. 
   
   
       23 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that the extent of the purging and/or deposition chamber ( 11 ,  11 ′,  40 ) in the circumferential direction is smaller than the extent of the substrate ( 9 ) in the circumferential direction. 
   
   
       24 . Apparatus according to one or more of the preceding claims or in particular according thereto, characterized in that the width of the purging and/or deposition chamber ( 11 ,  11 ′,  40 ) in the circumferential direction increases with radial distance and, in particular, the purging and/or deposition chamber has an outline of circle-segment form. 
   
   
       25 . Method of depositing at least one in particular thin layer on at least one substrate ( 9 ) in a process chamber ( 11 ,  11 ′) which is disposed in a reactor housing ( 2 ), in which the substrate ( 9 ) is carried by a movable susceptor ( 20 ) and into which are introduced different process gases which contain layer-forming components which are deposited on the substrate ( 9 ) in successive process steps, characterized in that the different process gases are introduced into deposition chambers ( 11 ,  11 ′) of the process chamber which are separate from one another, and the at least one substrate is conveyed to the individual deposition chambers ( 11 ,  11 ′) one after the other by the movement of the susceptor ( 20 ), and one of the process steps is carried out in each deposition chamber ( 11 ,  11 ′). 
   
   
       26 . Method according to  claim 25  or in particular according thereto, characterized in that the susceptor ( 20 ) moves in one plane and, in particular, the susceptor ( 20 ) is rotated. 
   
   
       27 . Method according to either of  claims 25  and  26  or in particular according thereto, characterized in that the gap ( 21 ) in the region between two deposition or purging chambers ( 11 ,  11 ′) and the susceptor ( 20 ) is purged with a sealing gas, in particular an inert gas. 
   
   
       28 . Method according to one of  claims 25  to  27  or in particular according thereto, characterized in that the deposited layers comprise two or more components made up, in particular, of elements of the main groups II and VI, III and V or IV, the components being deposited in different deposition chambers. 
   
   
       29 . Method according to one of  claims 25  to  28  or in particular according thereto, characterized in that the components are deposited on the substrate ( 9 ) in mono layers. 
   
   
       30 . Method according to one of  claims 25  to  29  or in particular according thereto, characterized in that the deposition chambers ( 11 ,  11 ′) have the process gases which are associated with them flowing through them continuously. 
   
   
       31 . Method according to one of  claims 25  to  30  or in particular according thereto, characterized in that the gas stream flowing into the deposition and/or purging chamber ( 11 ,  11 ′,  40 ) is equal in size to the gas stream passing out of the deposition and/or purging chamber. 
   
   
       32 . Method according to one of  claims 25  to  31  or in particular according thereto, characterized in that the substrates ( 9 ) are alternately associated with different deposition chambers ( 11 ), one deposition chamber ( 11 ,  11 ′) containing a metal-containing gas which results in a metal layer being deposited on the substrate, the substrates ( 9 ) then being assigned to a different deposition chamber ( 11 ′), this one containing another gas which reacts with the previously deposited metal layer. 
   
   
       33 . Method according to one of  claims 25  to  32  or in particular according thereto, characterized in that the substrates, between their assignment to two deposition chambers ( 11 ,  11 ′), each containing a reactive gas, are assigned to a purging chamber ( 40 ) located between the deposition chambers, the purging chamber containing an inert purging gas and/or being evacuated to a lower pressure than the adjacent deposition chambers. 
   
   
       34 . Method according to one of  claims 25  to  33  or in particular according thereto, characterized in that the susceptor ( 20 ) is moved, in particular, rotated, continuously at a constant or varying speed. 
   
   
       35 . Method according to one of  claims 25  to  34  or in particular according thereto, characterized in that the susceptor is moved, in particular, rotated, in a stepwise manner such that the substrates ( 9 ) have a defined residence time in the region of the deposition or purging chamber. 
   
   
       36 . Method according to one of  claims 25  to  35  or in particular according thereto, characterized in that a first reactive gas contains at least one metal, in particular Al, Si, Pr, Ge, Ti, Zr, Hf, Y, La, Ce, Nb, Ta, Mo, Bi, Nd, Ba, Sr, W and/or Gd. 
   
   
       37 . Method according to one of  claims 25  to  36  or in particular according thereto, characterized in that a second reactive gas contains oxygen, in particular this substance being O 2  and O 3  and/or N 2 O and/or H 2 O. 
   
   
       38 . Method according to one of  claims 25  to  37  or in particular according thereto, characterized in that a second reactive gas contains nitrogen, in particular NH 3 . 
   
   
       39 . Method according to one of  claims 25  to  38  or in particular according thereto, characterized in that the substrates are associated with different deposition chambers ( 11 ,  11 ′) which contain different metal-containing or non-metal-containing reactive materials, the deposition chambers being disposed one after the other such that mixed oxides, nanolaminates and/or superlattices are deposited. 
   
   
       40 . Method according to one of  claims 25  to  39  or in particular according thereto, characterized in that the deposited layers are conformational or highly structured substrates. 
   
   
       41 . Method according to one of  claims 25  to  40  or in particular according thereto, characterized in that the deposited layers contain one or more components which contain metal oxides and/or metal nitrides and/or metal. 
   
   
       42 . Method according to one of  claims 25  to  41  or in particular according thereto, characterized in that the substrates are heated to a temperature above room temperature and the process chamber is kept at a pressure below 100 millibar.