Inventor · disambiguated record
Masatoshi Tsuneoka
Also filed as: TSUNEOKA MASATOSHI
16 granted patents·2 pending applications·388 citations·filing 1988–2007
95Inventor score
Top patents by PatentIndex Score
18 records- 0192US4931410AProcess for producing semiconductor integrated circuit device having copper interconnections and/or wirings, and device producedHITACHI LTD·Filed 1988·Granted Jun 5, 1990·137 cites·41 claims
- 0283US5202275ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1990·Granted Apr 13, 1993·43 cites·23 claims
- 0379US5780882ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1995·Granted Jul 14, 1998·33 cites·8 claims
- 0479US5060050ASemiconductor integrated circuit deviceHITACHI LTD·Filed 1990·Granted Oct 22, 1991·63 cites·17 claims
- 0576US6548847B2Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal filmHITACHI LTD·Filed 2001·Granted Apr 15, 2003·12 cites·33 claims
- 0673US7983471B2Pattern inspection apparatus and methodNGR INC·Filed 2007·Granted Jul 19, 2011·8 cites·34 claims
- 0773US5331191ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1992·Granted Jul 19, 1994·24 cites·11 claims
- 0866US8013315B2Charged particle beam apparatus, method of adjusting astigmatism using same and method of manufacturing device using sameEBARA CORP·Filed 2007·Granted Sep 6, 2011·2 cites·28 claims
- 0962US6894334B2Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI VLSI ENG·Filed 2003·Granted May 17, 2005·5 cites·33 claims
- 1061US6169324B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 2, 2001·13 cites·19 claims
- 1161US5739589ASemiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the sameHITACHI LTD·Filed 1996·Granted Apr 14, 1998·13 cites·21 claims
- 1251US6342412B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 29, 2002·8 cites·19 claims
- 1350US6127255ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1997·Granted Oct 3, 2000·8 cites·12 claims
- 1450US5811316AMethod of forming teos oxide and silicon nitride passivation layer on aluminum wiringHITACHI LTD·Filed 1995·Granted Sep 22, 1998·8 cites·13 claims
- 1547US5557147ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1994·Granted Sep 17, 1996·7 cites·18 claims
- 1643US2009152595A1Semiconductor devices and method of testing sameEBARA CORP·Filed 2006·Application pending·0 cites
- 1728US5068710ASemiconductor device with multilayer base contactHITACHI LTD·Filed 1989·Granted Nov 26, 1991·4 cites·43 claims
- 1827US2003127322A1Sputtering apparatus and magnetron unitFiled 1999·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Masatoshi Tsuneoka files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →