Inventor · disambiguated record
John R. Sporre
Also filed as: SPORRE JOHN · SPORRE JOHN R · SPORRE JOHN RYAN
97 granted patents·4 pending applications·634 citations·filing 2012–2024
99Inventor score
Top patents by PatentIndex Score
101 records- 0199US9620590B1Nanosheet channel-to-source and drain isolationIBM·Filed 2016·Granted Apr 11, 2017·105 cites·13 claims
- 0299US9608065B1Air gap spacer for metal gatesIBM·Filed 2016·Granted Mar 28, 2017·141 cites·20 claims
- 0398US11043581B2Nanosheet channel-to-source and drain isolationTESSERA INC·Filed 2020·Granted Jun 22, 2021·4 cites·11 claims
- 0498US9905643B1Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistorsIBM·Filed 2016·Granted Feb 27, 2018·28 cites·18 claims
- 0598US9721848B1Cutting fins and gates in CMOS devicesIBM·Filed 2016·Granted Aug 1, 2017·32 cites·20 claims
- 0698US9450095B1Single spacer for complementary metal oxide semiconductor process flowIBM·Filed 2016·Granted Sep 20, 2016·24 cites·16 claims
- 0798US9362179B1Method to form dual channel semiconductor material finsIBM·Filed 2015·Granted Jun 7, 2016·41 cites·14 claims
- 0897US9741823B1Fin cut during replacement gate formationIBM·Filed 2016·Granted Aug 22, 2017·22 cites·10 claims
- 0996US11652161B2Nanosheet channel-to-source and drain isolationTESSERA LLC·Filed 2021·Granted May 16, 2023·2 cites·21 claims
- 1096US10074730B2Forming stacked nanowire semiconductor deviceIBM·Filed 2016·Granted Sep 11, 2018·11 cites·17 claims
- 1195US10229854B1FinFET gate cut after dummy gate removalIBM·Filed 2017·Granted Mar 12, 2019·11 cites·11 claims
- 1295US10211055B2Fin patterns with varying spacing without fin cutIBM·Filed 2018·Granted Feb 19, 2019·7 cites·11 claims
- 1395US10014391B2Vertical transport field effect transistor with precise gate length definitionIBM·Filed 2016·Granted Jul 3, 2018·10 cites·10 claims
- 1495US9917196B1Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2016·Granted Mar 13, 2018·8 cites·8 claims
- 1595US9842739B2Method and structure for enabling high aspect ratio sacrificial gatesIBM·Filed 2016·Granted Dec 12, 2017·8 cites·16 claims
- 1695US9728622B1Dummy gate formation using spacer pull down hardmaskIBM·Filed 2016·Granted Aug 8, 2017·11 cites·18 claims
- 1795US9318574B2Method and structure for enabling high aspect ratio sacrificial gatesIBM·Filed 2014·Granted Apr 19, 2016·16 cites·15 claims
- 1894US10615269B2Nanosheet channel-to-source and drain isolationIBM·Filed 2018·Granted Apr 7, 2020·5 cites·12 claims
- 1994US10381437B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2017·Granted Aug 13, 2019·6 cites·11 claims
- 2094US10249738B2Nanosheet channel-to-source and drain isolationIBM·Filed 2016·Granted Apr 2, 2019·6 cites·9 claims
- 2194US9923080B1Gate height control and ILD protectionIBM·Filed 2017·Granted Mar 20, 2018·8 cites·20 claims
- 2294US9911914B1Sub-lithographic magnetic tunnel junctions for magnetic random access memory devicesIBM·Filed 2017·Granted Mar 6, 2018·14 cites·20 claims
- 2393US11239316B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2019·Granted Feb 1, 2022·4 cites·20 claims
- 2492US11127815B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2019·Granted Sep 21, 2021·4 cites·20 claims
- 2592US10043801B2Air gap spacer for metal gatesIBM·Filed 2017·Granted Aug 7, 2018·5 cites·20 claims
- 2691USRE50613EFinFET gate cut after dummy gate removalADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2022·Granted Sep 30, 2025·1 cites·38 claims
- 2791US10242981B2Fin cut during replacement gate formationIBM·Filed 2017·Granted Mar 26, 2019·5 cites·17 claims
- 2891US10049876B1Removal of trilayer resist without damage to underlying structureIBM·Filed 2017·Granted Aug 14, 2018·5 cites·20 claims
- 2991US2025142856A1Nanosheet channel-to-source and drain isolationADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2024·Application pending·0 cites
- 3090US9786666B2Method to form dual channel semiconductor material finsIBM·Filed 2016·Granted Oct 10, 2017·5 cites·13 claims
- 3190US9659779B2Method and structure for enabling high aspect ratio sacrificial gatesIBM·Filed 2014·Granted May 23, 2017·7 cites·16 claims
- 3289US10833190B2Super long channel device within VFET architectureIBM·Filed 2019·Granted Nov 10, 2020·4 cites·15 claims
- 3389US9882048B2Gate cut on a vertical field effect transistor with a defined-width inorganic maskIBM·Filed 2016·Granted Jan 30, 2018·5 cites·12 claims
- 3489US9536744B1Enabling large feature alignment marks with sidewall image transfer patterningIBM·Filed 2015·Granted Jan 3, 2017·5 cites·14 claims
- 3588US10504798B2Gate cut in replacement metal gate processGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 10, 2019·5 cites·5 claims
- 3688US10249753B2Gate cut on a vertical field effect transistor with a defined-width inorganic maskIBM·Filed 2017·Granted Apr 2, 2019·4 cites·20 claims
- 3787US11615992B2Substrate isolated VTFET devicesIBM·Filed 2020·Granted Mar 28, 2023·2 cites·14 claims
- 3887US10249533B1Method and structure for forming a replacement contactIBM·Filed 2018·Granted Apr 2, 2019·6 cites·20 claims
- 3986US12166110B2Nanosheet channel-to-source and drain isolationADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2023·Granted Dec 10, 2024·0 cites·23 claims
- 4086US11557589B2Air gap spacer for metal gatesTESSERA LLC·Filed 2020·Granted Jan 17, 2023·1 cites·17 claims
- 4186US11462631B2Sublithography gate cut physical unclonable functionIBM·Filed 2020·Granted Oct 4, 2022·2 cites·20 claims
- 4286US10224326B2Fin cut during replacement gate formationIBM·Filed 2017·Granted Mar 5, 2019·3 cites·20 claims
- 4385US10607991B2Air gap spacer for metal gatesTESSERA INC·Filed 2018·Granted Mar 31, 2020·2 cites·20 claims
- 4485US9991117B2Fin patterns with varying spacing without fin cutIBM·Filed 2017·Granted Jun 5, 2018·2 cites·20 claims
- 4585US9984877B2Fin patterns with varying spacing without fin cutIBM·Filed 2017·Granted May 29, 2018·2 cites·20 claims
- 4684US9893166B2Dummy gate formation using spacer pull down hardmaskIBM·Filed 2017·Granted Feb 13, 2018·3 cites·20 claims
- 4783US11024715B2FinFET gate cut after dummy gate removalTESSERA INC·Filed 2020·Granted Jun 1, 2021·1 cites·20 claims
- 4883US10741752B2Sub-lithographic magnetic tunnel junctions for magnetic random access memory devicesIBM·Filed 2020·Granted Aug 11, 2020·1 cites·20 claims
- 4983US9673199B1Gate cutting for a vertical transistor deviceIBM·Filed 2016·Granted Jun 6, 2017·3 cites·20 claims
- 5082US12402403B2Air gap spacer for metal gatesADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
Showing the top 50 of 101 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →