Inventor · disambiguated record
Jens Peter Konrath
Also filed as: KONRATH JENS · KONRATH JENS PETER
54 granted patents·10 pending applications·45 citations·filing 2013–2025
97Inventor score
Files withINFINEON TECHNOLOGIES AG56INFINEON TECHNOLOGIES AUSTRIA AG5INFINEON TECHNOLOGIES AUSTRIA2INFINEON1
Top patents by PatentIndex Score
64 records- 0190US11552173B2Silicon carbide device with trench gateINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 10, 2023·2 cites·26 claims
- 0290US10818749B2Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 27, 2020·6 cites·11 claims
- 0384US10566426B2Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layerINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 18, 2020·4 cites·27 claims
- 0482US12266694B2Silicon carbide device with a stripe-shaped trench gate structureINFINEON TECHNOLOGIES AG·Filed 2023·Granted Apr 1, 2025·0 cites·27 claims
- 0581US11063142B2Semiconductor device including silicon carbide body and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 13, 2021·2 cites·20 claims
- 0678US9905655B2Method for reducing bipolar degradation in an SIC semiconductor device and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Feb 27, 2018·2 cites·36 claims
- 0777US9859362B2Processing a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 2, 2018·2 cites·17 claims
- 0877US2025203986A1Silicon carbide device with a stripe-shaped trench gate structureINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0976US11888032B2Method of producing a silicon carbide device with a trench gateINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 30, 2024·0 cites·20 claims
- 1076US10593668B2Semiconductor device and corresponding manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 17, 2020·2 cites·18 claims
- 1174US12107141B2Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zoneINFINEON TECHNOLOGIES AG·Filed 2022·Granted Oct 1, 2024·0 cites·21 claims
- 1274US9633957B2Semiconductor device, a power semiconductor device, and a method for processing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Granted Apr 25, 2017·3 cites·19 claims
- 1373US9257511B2Silicon carbide device and a method for forming a silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Feb 9, 2016·2 cites·18 claims
- 1472US9029974B2Semiconductor device, junction field effect transistor and vertical field effect transistorINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 12, 2015·3 cites·17 claims
- 1571US11024502B2Semiconductor devices and methods for forming semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 1, 2021·1 cites·17 claims
- 1671US10672661B2Preliminary trenches formed in kerf regions for die singulationINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 2, 2020·2 cites·23 claims
- 1770US9704718B2Method for manufacturing a silicon carbide device and a silicon carbide deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Jul 11, 2017·2 cites·18 claims
- 1870US9136397B2Field-effect semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Sep 15, 2015·2 cites·18 claims
- 1969US11854926B2Semiconductor device with a passivation layer and method for producing thereofINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 2069US9859383B2Schottky diode with reduced forward voltageINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 2, 2018·2 cites·17 claims
- 2169US9595469B2Semiconductor device and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2013·Granted Mar 14, 2017·2 cites·25 claims
- 2269US9236458B2Bipolar transistor and a method for manufacturing a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jan 12, 2016·2 cites·18 claims
- 2367US11302795B2Method of manufacturing a semiconductor device and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Apr 12, 2022·0 cites·14 claims
- 2464US11211303B2Semiconductor device including a passivation structure and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 28, 2021·1 cites·25 claims
- 2564US9711660B2JFET and method of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 18, 2017·1 cites·14 claims
- 2664US9548399B2Junction field effect transistor cell with lateral channel regionINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jan 17, 2017·1 cites·11 claims
- 2762US11842938B2Semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 12, 2023·0 cites·18 claims
- 2861US9508711B2Semiconductor device with bipolar junction transistor cellsINFINEON TECHNOLOGIES AG·Filed 2013·Granted Nov 29, 2016·1 cites·14 claims
- 2960US11158557B2Semiconductor device with a passivation layer and method for producing thereofINFINEON TECHNOLOGIES AG·Filed 2019·Granted Oct 26, 2021·0 cites·20 claims
- 3060US10937784B2Method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Mar 2, 2021·0 cites·23 claims
- 3159US10431698B2Semiconductor device with non-ohmic contact between SiC and a contact layer containing metal nitrideINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Oct 1, 2019·0 cites·20 claims
- 3257US2023299147A1Method for producing a sic superjunction deviceINFINEON·Filed 2023·Application pending·0 cites
- 3356US10199514B2Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material and an electrically conductive contact layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 5, 2019·0 cites·19 claims
- 3456US2024105832A1Field effect transistor comprising edge termination areaINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 3554US9966348B2Method for processing an electronic component and an electronic componentINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 8, 2018·0 cites·20 claims
- 3653US11322596B2Semiconductor device including junction material in a trench and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 3, 2022·0 cites·21 claims
- 3753US10411097B2Semiconductor component having a doped substrate layer and corresponding methods of manufacturingINFINEON TECHNOLOGIES AG·Filed 2018·Granted Sep 10, 2019·0 cites·11 claims
- 3853US9997459B2Semiconductor device having a barrier layer made of amorphous molybdenum nitride and method for producing such a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 12, 2018·0 cites·17 claims
- 3953US9806041B1Method for processing an electronic component and an electronic componentINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 31, 2017·0 cites·20 claims
- 4053US2023317797A1Wide band gap semiconductor device and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 4152US9496346B2Silicon carbide device and a method for forming a silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Nov 15, 2016·0 cites·16 claims
- 4252US9070790B2Vertical semiconductor device and method of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jun 30, 2015·0 cites·16 claims
- 4352US2015364550A1Optimized layer for semiconductorINFINEON TECHNOLOGIES AG·Filed 2014·Application pending·0 cites
- 4452US2015255362A1Semiconductor Device with a Passivation Layer and Method for Producing ThereofINFINEON TECHNOLOGIES AG·Filed 2014·Application pending·0 cites
- 4551US11380756B2Silicon carbide device with Schottky contactINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jul 5, 2022·0 cites·20 claims
- 4651US11217500B2Semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 4, 2022·0 cites·26 claims
- 4750US10014383B2Method for manufacturing a semiconductor device comprising a metal nitride layer and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 3, 2018·0 cites·21 claims
- 4850US9425327B2Junction field effect transistor cell with lateral channel regionINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 23, 2016·0 cites·18 claims
- 4950US9384983B2Method of manufacturing a vertical semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jul 5, 2016·0 cites·18 claims
- 5050US2018122918A1Methods for Forming a Plurality of Semiconductor Devices on a Plurality of Semiconductor WafersINFINEON TECHNOLOGIES AG·Filed 2017·Application pending·0 cites
Showing the top 50 of 64 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →