Methods for Forming a Plurality of Semiconductor Devices on a Plurality of Semiconductor Wafers

Abstract

A method for forming a plurality of semiconductor devices on a plurality of semiconductor wafers is provided. The method includes forming an electrically conductive layer on a surface of a first semiconductor wafer so that a Schottky-contact is generated between the electrically conductive layer formed on the first semiconductor wafer and the first semiconductor wafer. A material composition of the electrically conductive layer formed on the first semiconductor wafer is selected based on a value of a physical property of the first semiconductor wafer. The method further includes forming an electrically conductive layer on a surface of a second semiconductor wafer so that a Schottky-contact is generated between the electrically conductive layer formed on the second semiconductor wafer and the second semiconductor wafer. A material composition of the electrically conductive layer formed on the second semiconductor wafer is selected based on a value of the physical property of the second semiconductor wafer. The material composition of the electrically conductive layer formed on the second semiconductor wafer is different from the material composition of the electrically conductive layer formed on the first semiconductor wafer.

1 - 17 . (canceled) 
     
     
         18 . A method for forming a plurality of semiconductor devices on a plurality of semiconductor wafers, the method comprising:
 implanting ions into a first semiconductor wafer, wherein a concentration of the ions implanted into the first semiconductor wafer is selected based on a value of a physical property of the first semiconductor wafer;   implanting ions into a second semiconductor wafer, wherein a concentration of the ions implanted into the second semiconductor wafer is selected based on a value of the physical property of the second semiconductor wafer,   wherein the concentration of the ions implanted into the first semiconductor wafer is different from the concentration of the ions implanted into the second semiconductor wafer.   
     
     
         19 . The method of  claim 18 , wherein the method further comprises:
 forming an electrically conductive layer on the surface of the first semiconductor wafer so that a Schottky-contact is generated between the electrically conductive layer formed on the first semiconductor wafer and the first semiconductor wafer; and   forming an electrically conductive layer on the surface of the second semiconductor wafer so that a Schottky-contact is generated between the electrically conductive layer formed on the second semiconductor wafer and the second semiconductor wafer.   
     
     
         20 . The method of  claim 18 , wherein the method further comprises:
 removing impurities from the surface of the first semiconductor wafer by a back sputter process applied to the surface of the first semiconductor wafer; and   removing impurities from the surface of the second semiconductor wafer by a back sputter process applied to the surface of the second semiconductor wafer.   
     
     
         21 - 24 . (canceled) 
     
     
         25 . The method of  claim 19 , wherein the material composition of the electrically conductive layer formed on the first semiconductor wafer comprises an alloy of two or more metal elements, a composition comprising a metal element and a non-metal element or a composition comprising a metal element, a semiconductor element and a non-metal element. 
     
     
         26 . The method of  claim 19 , wherein the electrically conductive layer formed on the first semiconductor wafer comprises nitrogen, and wherein a concentration of nitrogen of the electrically conductive layer formed on the first semiconductor wafer is selected based on the value of the physical property of the first semiconductor wafer. 
     
     
         27 . The method of  claim 19 , wherein the material composition of the electrically conductive layer formed on the first semiconductor wafer and the material composition of the electrically conductive layer formed on the second semiconductor wafer are selected such that a Schottky-barrier of the Schottky-contact between the electrically conductive layer formed on the first semiconductor wafer and the first semiconductor wafer differs by at least 5% from a Schottky-barrier of the Schottky-contact between the electrically conductive layer formed on the second semiconductor wafer and the second semiconductor wafer. 
     
     
         28 . The method of  claim 19 , wherein:
 a material composition of the electrically conductive layer formed on the first semiconductor wafer is selected based on a value of a physical property of the first semiconductor wafer;   a material composition of the electrically conductive layer formed on the second semiconductor wafer is selected based on a value of the physical property of the second semiconductor wafer; and   the material composition of the electrically conductive layer formed on the second semiconductor wafer is different from the material composition of the electrically conductive layer formed on the first semiconductor wafer.   
     
     
         29 . The method of  claim 19 , wherein the material composition of the electrically conductive layer formed on the first semiconductor wafer and the material composition of the electrically conductive layer formed on the second semiconductor wafer comprise at least one same component. 
     
     
         30 . The method of  claim 19 , further comprising:
 forming a plurality of Schottky-diodes on the first semiconductor wafer from the Schottky-contact generated between the electrically conductive layer formed on the first semiconductor wafer and the first semiconductor wafer; and   forming a plurality of Schottky-diodes on the second semiconductor wafer from the Schottky-contact generated between the electrically conductive layer formed on the second semiconductor wafer and the second semiconductor wafer.   
     
     
         31 . The method of  claim 19 , wherein forming an electrically conductive layer on a surface of a second semiconductor wafer comprises:
 obtaining a measurement of a value of a physical property of the second   semiconductor wafer different from a value of a physical property of the first semiconductor wafer; and   selecting, based on the value of the physical property of the second semiconductor wafer, a material composition for the electrically conductive layer for the second semiconductor wafer different from a material composition of the electrically conductive layer of the first semiconductor wafer.   
     
     
         32 . The method of  claim 19 , wherein a portion of at least one component of the material composition of the electrically conductive layer formed on the first semiconductor wafer differs by at least 5% from a portion of the component in the material composition of the electrically conductive layer formed on the second semiconductor wafer. 
     
     
         33 . The method of  claim 19 , wherein a first material composition of the electrically conductive layer formed on the first semiconductor wafer is selected for a first value of the physical property of the first semiconductor wafer and a second material composition of the electrically conductive layer formed on the second semiconductor wafer different from the first material composition is selected for a second value of the physical property, the second value of the physical property being different from the first value of the physical property. 
     
     
         34 . (canceled) 
     
     
         35 . The method of  claim 20 , wherein a process time of the back sputter process applied to the surface of the first semiconductor wafer is different from a process time of the back sputter process applied to the surface of the second semiconductor wafer. 
     
     
         36 . The method of  claim 20 , wherein removing impurities from the surface of the first semiconductor wafer and the second semiconductor wafer by a back sputter process comprises using a sputter gas containing nitrogen 
     
     
         37 . The method of  claim 18 , wherein implanting ions into a second semiconductor wafer comprises:
 obtaining a measurement of a value of a physical property of the second semiconductor wafer different from a value of a physical property of the first semiconductor wafer; and   selecting, based on the value of the physical property of the second semiconductor wafer, the concentration of the ions to be implanted into the second semiconductor wafer different from the concentration of ions implanted into the first semiconductor wafer.   
     
     
         38 . The method of  claim 18 , further comprising:
 activating the implanted ions in the first semiconductor wafer; and   activating the implanted ions in the second semiconductor wafer.   
     
     
         39 . The method of  claim 38  wherein:
 activating the implanted ions in the first semiconductor wafer comprises heating the first semiconductor wafer to a temperature of at least 1300 degrees Celsius; and 
 activating the implanted ions in the second semiconductor wafer comprises heating the second semiconductor wafer to a temperature of at least 1300 degrees Celsius. 
 
     
     
         40 . The method of  claim 18 , wherein semiconductor devices formed on the first semiconductor wafer are substantially equal to semiconductor devices formed on the second semi-conductor wafer. 
     
     
         41 . The method of  claim 18 , wherein the physical property is at least one of a thickness, a thickness of a layer, a dopant concentration, a dopant concentration of a layer, and a sheet resistance of a semiconductor wafer. 
     
     
         42 . The method of  claim 18 , wherein the method further comprises determining a value of the physical property of the first semiconductor wafer.