Inventor · disambiguated record
Yao-Sheng Lee
Also filed as: LEE YAO-SHENG
75 granted patents·5 pending applications·2,955 citations·filing 2003–2020
99Inventor score
Files withSANDISK TECHNOLOGIES INC36SANDISK TECHNOLOGIES LLC34LEE YAO-SHENG3ALSMEIER JOHANN2MAKALA RAGHUVEER S1
Top patents by PatentIndex Score
80 records- 0199US11244953B2Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 8, 2022·10 cites·13 claims
- 0299US10475879B1Support pillar structures for leakage reduction in a three-dimensional memory device and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 12, 2019·46 cites·20 claims
- 0399US10256247B1Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 9, 2019·77 cites·10 claims
- 0499US9824966B1Three-dimensional memory device containing a lateral source contact and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 21, 2017·129 cites·18 claims
- 0599US9627399B2Three-dimensional memory device with metal and silicide control gatesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 18, 2017·41 cites·25 claims
- 0699US9449982B2Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·71 cites·20 claims
- 0799US9227456B2Memories with cylindrical read/write stacksSANDISK 3D LLC·Filed 2013·Granted Jan 5, 2016·188 cites·14 claims
- 0899US9230973B2Methods of fabricating a three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·207 cites·28 claims
- 0999US9023719B2High aspect ratio memory hole channel contact formationSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 5, 2015·137 cites·36 claims
- 1099US8946023B2Method of making a vertical NAND device using sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2013·Granted Feb 3, 2015·96 cites·20 claims
- 1199US8187936B2Ultrahigh density vertical NAND memory device and method of making thereofALSMEIER JOHANN·Filed 2010·Granted May 29, 2012·304 cites·18 claims
- 1298US11621277B2Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereofSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 4, 2023·5 cites·8 claims
- 1398US11296101B2Three-dimensional memory device including an inter-tier etch stop layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 5, 2022·9 cites·21 claims
- 1498US11171097B2Bonded assembly containing metal-organic framework bonding dielectric and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 9, 2021·9 cites·18 claims
- 1598US10438964B2Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 8, 2019·40 cites·7 claims
- 1698US10381434B1Support pillar structures for leakage reduction in a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·40 cites·12 claims
- 1798US10269620B2Multi-tier memory device with through-stack peripheral contact via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 23, 2019·34 cites·15 claims
- 1898US10199434B1Three-dimensional cross rail phase change memory device and method of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 5, 2019·23 cites·15 claims
- 1998US10056399B2Three-dimensional memory devices containing inter-tier dummy memory cells and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Aug 21, 2018·24 cites·20 claims
- 2098US9793139B2Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word linesSANDISK TECHNOLOGIES INC·Filed 2016·Granted Oct 17, 2017·38 cites·26 claims
- 2198US9780182B2Molybdenum-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 3, 2017·32 cites·16 claims
- 2298US9679906B2Three-dimensional memory devices containing memory block bridgesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 13, 2017·35 cites·18 claims
- 2398US9627403B2Multilevel memory stack structure employing support pillar structuresSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 18, 2017·69 cites·25 claims
- 2498US9570463B1Multilevel memory stack structure with joint electrode having a collar portion and methods for manufacturing the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Feb 14, 2017·104 cites·18 claims
- 2598US9478558B2Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 25, 2016·43 cites·34 claims
- 2698US9356031B2Three dimensional NAND string memory devices with voids enclosed between control gate electrodesSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 31, 2016·61 cites·4 claims
- 2798US9159739B2Floating gate ultrahigh density vertical NAND flash memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 13, 2015·70 cites·27 claims
- 2898US8987089B1Methods of fabricating a three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Mar 24, 2015·50 cites·18 claims
- 2998US8614126B1Method of making a three-dimensional memory array with etch stopLEE YAO-SHENG·Filed 2012·Granted Dec 24, 2013·95 cites·14 claims
- 3098US8461641B2Ultrahigh density vertical NAND memory device and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2012·Granted Jun 11, 2013·42 cites·15 claims
- 3198US8330208B2Ultrahigh density monolithic three dimensional vertical NAND string memory device and method of making thereofALSMEIER JOHANN·Filed 2012·Granted Dec 11, 2012·46 cites·14 claims
- 3297US10014316B2Three-dimensional memory device with leakage reducing support pillar structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 3, 2018·35 cites·23 claims
- 3397US9691884B2Monolithic three dimensional NAND strings and methods of fabrication thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 27, 2017·41 cites·42 claims
- 3497US9496274B2Three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 15, 2016·27 cites·25 claims
- 3597US9460931B2High aspect ratio memory hole channel contact formationPACHAMUTHU JAYAVEL·Filed 2014·Granted Oct 4, 2016·58 cites·17 claims
- 3697US9437606B2Method of making a three-dimensional memory array with etch stopSANDISK TECHNOLOGIES INC·Filed 2013·Granted Sep 6, 2016·38 cites·16 claims
- 3797US8658499B2Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND deviceMAKALA RAGHUVEER S·Filed 2012·Granted Feb 25, 2014·154 cites·20 claims
- 3896US10700086B2Three-dimensional flat NAND memory device having high mobility channels and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jun 30, 2020·12 cites·9 claims
- 3996US9570460B2Spacer passivation for high-aspect ratio opening film removal and cleaningSANDISK TECHNOLOGIES INC·Filed 2015·Granted Feb 14, 2017·15 cites·21 claims
- 4096US9520406B2Method of making a vertical NAND device using sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 13, 2016·26 cites·11 claims
- 4196US9305932B2Methods of making three dimensional NAND devicesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·23 cites·24 claims
- 4296US9099496B2Method of forming an active area with floating gate negative offset profile in FG NAND memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 4, 2015·31 cites·34 claims
- 4395US10461163B2Three-dimensional memory device with thickened word lines in terrace region and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 29, 2019·14 cites·21 claims
- 4495US10128261B2Cobalt-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Nov 13, 2018·14 cites·25 claims
- 4595US9672917B1Stacked vertical memory array architectures, systems and methodsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jun 6, 2017·23 cites·14 claims
- 4695US9524779B2Three dimensional vertical NAND device with floating gatesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 20, 2016·21 cites·20 claims
- 4795US9515079B2Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attackSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 6, 2016·13 cites·13 claims
- 4895US8933501B2Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 13, 2015·17 cites·16 claims
- 4995US8828884B2Multi-level contact to a 3D memory array and method of makingLEE YAO-SHENG·Filed 2012·Granted Sep 9, 2014·35 cites·14 claims
- 5094US10741572B2Three-dimensional memory device having multilayer word lines containing selectively grown cobalt or ruthenium and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Aug 11, 2020·12 cites·7 claims
Showing the top 50 of 80 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →