Inventor · disambiguated record
Satyarth Suri
Also filed as: SURI SATYARTH
29 granted patents·5 pending applications·110 citations·filing 2008–2023
95Inventor score
Top patents by PatentIndex Score
34 records- 0196US8785909B2Non-planar semiconductor device having channel region with low band-gap cladding layerRADOSAVLJEVIC MARKO·Filed 2012·Granted Jul 22, 2014·28 cites·31 claims
- 0292US9882121B2Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layerINTEL CORP·Filed 2014·Granted Jan 30, 2018·7 cites·22 claims
- 0392US8786040B2Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form sameDOYLE BRIAN S·Filed 2012·Granted Jul 22, 2014·12 cites·28 claims
- 0491US10937689B2Self-aligned hard masks with converted linersINTEL CORP·Filed 2016·Granted Mar 2, 2021·7 cites·20 claims
- 0591US8785907B2Epitaxial film growth on patterned substrateGOEL NITI·Filed 2012·Granted Jul 22, 2014·13 cites·24 claims
- 0687US8519510B2Semiconductor structure having an integrated quadruple-wall capacitor for embedded dynamic random access memory (eDRAM) and method to form the sameDOYLE BRIAN S·Filed 2011·Granted Aug 27, 2013·9 cites·15 claims
- 0783US10158065B2Spin-transfer torque memory (STTM) devices having magnetic contactsINTEL CORP·Filed 2014·Granted Dec 18, 2018·6 cites·24 claims
- 0881US10832847B2Low stray field magnetic memoryINTEL CORP·Filed 2015·Granted Nov 10, 2020·2 cites·25 claims
- 0980US9496486B2Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form sameINTEL CORP·Filed 2015·Granted Nov 15, 2016·4 cites·18 claims
- 1079US10832749B2Perpendicular magnetic memory with symmetric fixed layersINTEL CORP·Filed 2015·Granted Nov 10, 2020·5 cites·25 claims
- 1177US9779794B2Techniques for forming spin-transfer torque memory (STTM) elements having annular contactsINTEL CORP·Filed 2014·Granted Oct 3, 2017·5 cites·25 claims
- 1272US10580973B2Spin-transfer torque memory (STTM) devices having magnetic contactsINTEL CORP·Filed 2018·Granted Mar 3, 2020·2 cites·20 claims
- 1370US9224794B2Embedded memory device having MIM capacitor formed in excavated structureINTEL CORP·Filed 2013·Granted Dec 29, 2015·1 cites·6 claims
- 1468US10546772B2Self-aligned via below subtractively patterned interconnectINTEL CORP·Filed 2016·Granted Jan 28, 2020·1 cites·20 claims
- 1568US10418415B2Interconnect capping process for integration of MRAM devices and the resulting structuresINTEL CORP·Filed 2016·Granted Sep 17, 2019·1 cites·24 claims
- 1666US7927959B2Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced therebyINTEL CORP·Filed 2008·Granted Apr 19, 2011·3 cites·15 claims
- 1765US10340443B2Perpendicular magnetic memory with filament conduction pathINTEL CORP·Filed 2015·Granted Jul 2, 2019·1 cites·26 claims
- 1864US10365894B2Random number generatorINTEL CORP·Filed 2015·Granted Jul 30, 2019·1 cites·14 claims
- 1963US12332408B2Anti-reflective optical structures for optical systemsAPPLE INC·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 2063US8441057B2Embedded memory device having MIM capacitor formed in excavated structureKEATING STEVEN J·Filed 2011·Granted May 14, 2013·1 cites·7 claims
- 2157US8913422B2Decreased switching current in spin-transfer torque memoryKARPOV ELIJAH V·Filed 2012·Granted Dec 16, 2014·1 cites·20 claims
- 2256US9214215B2Decreased switching current in spin-transfer torque memoryKARPOV ELIJAH V·Filed 2013·Granted Dec 15, 2015·0 cites·20 claims
- 2349US9105839B2Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form sameDOYLE BRIAN S·Filed 2014·Granted Aug 11, 2015·0 cites·5 claims
- 2446US10707409B2Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layerINTEL CORP·Filed 2018·Granted Jul 7, 2020·0 cites·20 claims
- 2544US10388858B2Fabrication of crystalline magnetic films for PSTTM applicationsINTEL CORP·Filed 2014·Granted Aug 20, 2019·0 cites·18 claims
- 2644US2010155801A1Integrated circuit, 1T-1C embedded memory cell containing same, and method of manufacturing 1T-1C memory cell for embedded memory applicationDOYLE BRIAN S·Filed 2008·Application pending·0 cites
- 2743US10395707B2Amorphous seed layer for improved stability in perpendicular STTM stackINTEL CORP·Filed 2014·Granted Aug 27, 2019·0 cites·20 claims
- 2843US10381556B2Spin transfer torque memory (STTM), methods of forming the same using a non-conformal insulator, and devices including the sameINTEL CORP·Filed 2015·Granted Aug 13, 2019·0 cites·9 claims
- 2942US10964886B2Spin transfer torque memory devices having heusler magnetic tunnel junctionsINTEL CORP·Filed 2016·Granted Mar 30, 2021·0 cites·25 claims
- 3040US2012235274A1Semiconductor structure having an integrated double-wall capacitor for embedded dynamic random access memory (edram) and method to form the sameDOYLE BRIAN S·Filed 2011·Application pending·0 cites
- 3139US2019280047A1Dual pedestal memoryINTEL CORP·Filed 2016·Application pending·0 cites
- 3236US2015091110A1Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic LayersKUO CHARLES C·Filed 2013·Application pending·0 cites
- 3335US10580975B2Spin transfer torque memory (STTM), methods of forming the same using volatile compound forming elements, and devices including the sameINTEL CORP·Filed 2015·Granted Mar 3, 2020·0 cites·9 claims
- 3432US2020066967A1Damascene-based approaches for fabricating a pedestal for a magnetic tunnel junction (mtj) device and the resulting structuresINTEL CORP·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →