Inventor · disambiguated record
Reinhard Ploss
Also filed as: PLOSS REINHARD
17 granted patents·1 pending application·31 citations·filing 2000–2021
90Inventor score
Files withINFINEON TECHNOLOGIES AG13INFINEON TECHNOLOGIES AUSTRIA AG2KOLLER ADOLF1MAUDER ANTON1SCHULZE HANS-JOACHIM1
Top patents by PatentIndex Score
18 records- 0188US9245811B2Method for postdoping a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 26, 2016·7 cites·17 claims
- 0279US9559020B2Method for postdoping a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jan 31, 2017·2 cites·20 claims
- 0376US11139369B2Method of forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Oct 5, 2021·1 cites·21 claims
- 0473US8164173B2Panel, semiconductor device and method for the production thereofKOLLER ADOLF·Filed 2010·Granted Apr 24, 2012·3 cites·13 claims
- 0572US10340335B2Method of forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jul 2, 2019·1 cites·24 claims
- 0671US11888024B2Method of forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 30, 2024·0 cites·22 claims
- 0771US7772693B2Panel, semiconductor device and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2007·Granted Aug 10, 2010·4 cites·30 claims
- 0870US10014400B2Semiconductor device having a defined oxygen concentrationINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 3, 2018·1 cites·20 claims
- 0967US6646304B1Universal semiconductor wafer for high-voltage semiconductor componentsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 11, 2003·11 cites·13 claims
- 1064US9219144B2Semiconductor device including a trench in a semiconductor substrate and method of manufacturing a semiconductor deviceMAUDER ANTON·Filed 2012·Granted Dec 22, 2015·1 cites·17 claims
- 1158US9142401B2Semiconductor device and method of manufacturing a semiconductor device with a continuous silicate glass structureINFINEON TECHNOLOGIES AG·Filed 2014·Granted Sep 22, 2015·0 cites·8 claims
- 1255US9842904B2Method of manufacturing a semiconductor device having a trench at least partially filled with a conductive material in a semiconductor substrateINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Dec 12, 2017·0 cites·16 claims
- 1355US9384960B2Method of manufacturing a semiconductor device with a continuous silicate glass structureINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jul 5, 2016·0 cites·16 claims
- 1454US8785997B2Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2012·Granted Jul 22, 2014·0 cites·15 claims
- 1554US2016300920A1Method of Manufacturing a Semiconductor Device with a Polysilicon-Filled TrenchINFINEON TECHNOLOGIES AG·Filed 2016·Application pending·0 cites
- 1653US9570566B2Semiconductor device including a trench at least partially filled with a conductive material in a semiconductor substrateINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 14, 2017·0 cites·12 claims
- 1748US11251269B2Semiconductor device including trench gate structure and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2019·Granted Feb 15, 2022·0 cites·18 claims
- 1846US9728395B2Method for manufacturing a semiconductor wafer, and semiconductor device having a low concentration of interstitial oxygenINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 8, 2017·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →