Inventor · disambiguated record
Sang-Sup Jeong
Also filed as: JEONG SANG-SUP
31 granted patents·8 pending applications·891 citations·filing 1997–2013
97Inventor score
Top patents by PatentIndex Score
39 records- 0199US6617253B1Plasma etching method using polymer deposition and method of forming contact hole using the plasma etching methodSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 9, 2003·465 cites·35 claims
- 0296US8507353B2Method of forming semiconductor device having self-aligned plugOH GYU-HWAN·Filed 2011·Granted Aug 13, 2013·38 cites·11 claims
- 0396US6461911B2Semiconductor memory device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 8, 2002·129 cites·21 claims
- 0490US8906763B2Method of manufacturing a dynamic random access memory (DRAM) including forming contact pads of adjacent cells by laterally etching a contact opening of a cell therebetweenPARK JONG-CHUL·Filed 2012·Granted Dec 9, 2014·13 cites·16 claims
- 0588US8916447B2Method of fabricating semiconductor devicePARK JONG-CHUL·Filed 2011·Granted Dec 23, 2014·10 cites·20 claims
- 0687US7572711B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 11, 2009·15 cites·7 claims
- 0786US7438765B2Adjustable shielding plate for adjusting an etching area of a semiconductor wafer and related apparatus and methodsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 21, 2008·11 cites·15 claims
- 0884US8790976B2Method of forming semiconductor device having self-aligned plugSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 29, 2014·5 cites·9 claims
- 0982US8704283B2Semiconductor devicesKIM JONG-KYU·Filed 2010·Granted Apr 22, 2014·8 cites·16 claims
- 1079US8445379B2Method of manufacturing semiconductor devicePARK JONG-CHUL·Filed 2011·Granted May 21, 2013·4 cites·20 claims
- 1178US6573551B1Semiconductor memory device having self-aligned contact and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 3, 2003·23 cites·10 claims
- 1276US8053358B2Methods of forming integrated circuit devices using contact hole spacers to improve contact isolationSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Nov 8, 2011·4 cites·3 claims
- 1375US6177320B1Method for forming a self aligned contact in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 23, 2001·50 cites·30 claims
- 1474US6461975B1Method of etching insulating layer in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 8, 2002·16 cites·14 claims
- 1573US8067285B2Methods of forming a conductive layer structure and methods of manufacturing a recessed channel transistor including the samePARK JONG-CHUL·Filed 2010·Granted Nov 29, 2011·4 cites·18 claims
- 1668US8017485B2Methods of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 13, 2011·4 cites·18 claims
- 1767US6451663B1Method of manufacturing a cylindrical storage node in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 17, 2002·11 cites·11 claims
- 1866US7875551B2Methods of forming integrated circuit devices using contact hole spacers to improve contact isolationSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 25, 2011·3 cites·14 claims
- 1965US8003487B2Methods of manufacturing a semiconductor device using a layer suspended across a trenchSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 23, 2011·4 cites·13 claims
- 2064US7109080B2Method of forming capacitor over bitline contactSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 19, 2006·4 cites·20 claims
- 2164US5903351AMethod and apparatus for selective spectroscopic analysis of a wafer surface and gas phase elements in a reaction chamberSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted May 11, 1999·29 cites·14 claims
- 2260US7557026B2Contact structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 7, 2009·2 cites·8 claims
- 2360US7091117B2Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 15, 2006·5 cites·17 claims
- 2459US8551888B2Method of forming patterns for semiconductor deviceKANG YUN-SEUNG·Filed 2011·Granted Oct 8, 2013·1 cites·16 claims
- 2558US7312117B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 25, 2007·1 cites·24 claims
- 2656US6348375B1Method of fabricating a bit line structure for a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Feb 19, 2002·14 cites·6 claims
- 2751US7161205B2Semiconductor memory device with cylindrical storage electrode and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 9, 2007·4 cites·32 claims
- 2849US7863677B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 4, 2011·0 cites·17 claims
- 2949US2008061352A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3048US6337275B1Method for forming a self aligned contact in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 8, 2002·14 cites·8 claims
- 3147US2009117723A1Methods of forming a conductive pattern in semiconductor devices and methods of manufacturing semiconductor devices having a conductive patternSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3242US8778757B2Methods of manufacturing a DRAM devicePARK JONG-CHUL·Filed 2012·Granted Jul 15, 2014·0 cites·20 claims
- 3342US2009014833A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3439US6682975B2Semiconductor memory device having self-aligned contact and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 27, 2004·0 cites·10 claims
- 3539US2004171261A1Method of etching a silicon nitride film and method of manufacturing a semiconductor device using the sameFiled 2004·Application pending·0 cites
- 3637US2002027288A1Bit line structure for semiconductor deviceFiled 2001·Application pending·0 cites
- 3737US2006113590A1Method of forming a recess structure, recessed channel type transistor and method of manufacturing the recessed channel type transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3837US2006046382A1Method of forming a capacitor for a semiconductor deviceYOON KUK-HAN·Filed 2005·Application pending·0 cites
- 3936US2002024093A1Semiconductor device with self-aligned contact structure employing dual spacers and method of manufacturing the sameFiled 2001·Application pending·0 cites
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