Inventor · disambiguated record
Zhendong Hong
Also filed as: HONG ZHENDONG
13 granted patents·4 pending applications·48 citations·filing 2009–2023
88Inventor score
Top patents by PatentIndex Score
17 records- 0193US9105497B2Methods of forming gate structures for transistor devices for CMOS applicationsGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 11, 2015·19 cites·24 claims
- 0292US9362283B2Gate structures for transistor devices for CMOS applications and productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·9 cites·20 claims
- 0385US8882917B1Substrate processing including correction for deposition locationCHENG JEREMY·Filed 2009·Granted Nov 11, 2014·9 cites·10 claims
- 0482US9246096B2Atomic layer deposition of metal oxides for memory applicationsINTERMOLECULAR INC·Filed 2015·Granted Jan 26, 2016·3 cites·19 claims
- 0577US9297775B2Combinatorial screening of metallic diffusion barriersINTERMOLECULAR INC·Filed 2014·Granted Mar 29, 2016·1 cites·20 claims
- 0677US8735302B2High productivity combinatorial oxide terracing and PVD/ALD metal deposition combined with lithography for gate work function extractionJOSHI AMOL·Filed 2012·Granted May 27, 2014·4 cites·20 claims
- 0770US11967291B1Using content type to select brightness in direct-lit backlight unitsAPPLE INC·Filed 2023·Granted Apr 23, 2024·0 cites·20 claims
- 0868US2015025670A1Substrate Processing Including Correction for Deposition LocationINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 0960US8846443B2Atomic layer deposition of metal oxides for memory applicationsHONG ZHENDONG·Filed 2011·Granted Sep 30, 2014·1 cites·19 claims
- 1059US8854067B2Circular transmission line methods compatible with combinatorial processing of semiconductorsJOSHI AMOL·Filed 2012·Granted Oct 7, 2014·1 cites·12 claims
- 1157US9006026B2Atomic layer deposition of metal oxides for memory applicationsINTERMOLECULAR INC·Filed 2014·Granted Apr 14, 2015·0 cites·17 claims
- 1256US8664014B2High productivity combinatorial workflow for photoresist strip applicationsLI BEI·Filed 2011·Granted Mar 4, 2014·1 cites·20 claims
- 1348US8920618B2Combinatorial processing using high deposition rate sputteringYang hong sheng·Filed 2011·Granted Dec 30, 2014·0 cites·15 claims
- 1444US9059156B2Method of forming an erbium silicide metal gate stack FinFET device via a physical vapor deposition nanolaminate approachINTERMOLECULAR INC·Filed 2013·Granted Jun 16, 2015·0 cites·20 claims
- 1544US2016181380A1Semiconductor Device Metal-Insulator-Semiconductor Contacts with Interface Layers and Methods for Forming the SameINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 1641US2016093711A1Tantalum carbide metal gate stack for mid-gap work function applicationsINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 1739US2014363942A1Method for forming a low resistivity tungsten silicide layer for metal gate stack applicationsINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
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