Substrate Processing Including Correction for Deposition Location

Abstract

Substrate processing including correction for deposition location is described, including a combinatorial processing chamber that incorporates the correction. The combinatorial processing chamber can be used to process multiple regions of a substrate using different processing parameters on different regions. For example, one region can have one material deposited on it and another region can have a different material deposited on it, although other combinations and variations are possible. The combinatorial processing chamber uses a rotating and revolving substrate pedestal to be able to deposit on all locations or positions on a substrate. The combinatorial processing chamber uses a correction factor that accounts for variations in alignment and/or configuration of the processing chamber so that the actual location of deposition of a region is approximately the same as a desired location of deposition.

What is claimed: 
     
         1 . A method comprising:
 obtaining a correction factor,
 wherein the correction factor accounts for offsets of a rotation center of a substrate pedestal, a revolution center, and a center of a first substrate; 
   using the correction factor, determining at least one of
 a first rotation angle for rotating the substrate pedestal holding the first substrate, or 
 a first revolution angle for revolving a processing aperture relative to the first substrate for positioning the processing aperture relative to the first substrate; 
   positioning the processing aperture relative to the first substrate using at least one of
 rotating the substrate pedestal by the first rotation angle, or 
 revolving the processing aperture by the first revolution angle; and 
   after positioning, processing a first region of the first substrate.   
     
     
         2 . The method of  claim 1 , wherein the processing the first region comprises using physical vapor deposition (PVD). 
     
     
         3 . The method of  claim 1 , further comprising:
 determining the correction factor comprises:
 processing multiple regions of a second substrate; 
 determining correction vectors to calculate offsets of actual locations of the multiple regions compared to desired locations of the multiple regions; and 
 calculating the correction factor based on the correction vectors. 
   
     
     
         4 . The method of  claim 3 , further comprising measuring the actual locations of the multiple regions of the second substrate and comparing the actual locations of the multiple regions compared to the desired locations of the multiple regions. 
     
     
         5 . The method of  claim 3 , wherein the correction vectors are determined using an iterative two-dimensional Newton's method. 
     
     
         6 . The method of  claim 1 , further comprising processing a second region on the first substrate. 
     
     
         7 . The method of  claim 6 , wherein the first region and the second region are processed using different processing parameters. 
     
     
         8 . The method of  claim 6 , wherein processing the first region forms a first material, wherein processing the second region forms a second material, and wherein the first material and the second material have different compositions. 
     
     
         9 . The method of  claim 6 , further comprising, after processing the first region and prior to processing the second region, repositioning the processing aperture relative to the first substrate using at least one of rotating the substrate pedestal by the first rotation angle, or revolving the processing aperture by the first revolution angle. 
     
     
         10 . The method of  claim 6 , further comprising, prior to processing the second region on the first substrate,
 using the correction factor, determining at least one of
 a second rotation angle for rotating the substrate pedestal holding the first substrate, or 
 a second revolution angle for revolving the processing aperture relative to the first substrate for positioning the processing aperture relative to the first substrate for processing the first substrate; and 
   positioning the processing aperture relative to the first substrate using at least one of
 rotating the substrate pedestal by the second rotation angle, or 
 revolving the processing aperture by the second revolution angle. 
   
     
     
         11 . The method of  claim 1 , wherein the first rotation angle and the first revolution angle are both obtained using the correction factor. 
     
     
         12 . The method of  claim 1 , wherein positioning the processing aperture relative to the first substrate uses rotating the substrate pedestal by the first rotation angle and revolving the processing aperture by the first revolution angle. 
     
     
         13 . The method of  claim 1 , wherein the correction factor comprises:
     x   f   =r   1  cos φ 1   +r   a  cos φ 2   −x   w  and
       y   f   =r   1  sin φ 1   +r   a  sin φ 2   −y   w  
   wherein (x f , y f ) is the correction factor in Cartesian coordinates, (r 1 , φ 1 ) is a position of the processing aperture above the first substrate after at least one of a rotation about a first axis and a revolution around a second axis to position the aperture in polar coordinates, (r a , φ a ) is a vector between the first axis and the processing aperture, (x w , y w ) is the first offset, φ 2 =φ a +θ−ω, θ is an angle of rotation of the substrate pedestal, and ω is an angle of revolution of the processing aperture.   
     
     
         14 . The method of  claim 1 , further comprising determining alignment of the first substrate using an imaging device. 
     
     
         15 . The method of  claim 1 , wherein the processing aperture is formed in a process kit shield enclosing a plurality of deposition guns. 
     
     
         16 . The method of  claim 15 , wherein the process kit shield comprises a slide cover plate and wherein, during processing the first region of the first substrate, the slide cover plate seals at least one of the plurality of the deposition guns. 
     
     
         17 . The method of  claim 15 , wherein each of the plurality of deposition guns is operable to move in a direction substantially normal to the first substrate. 
     
     
         18 . The method of  claim 1 , wherein rotating the first substrate and revolving the processing aperture allow to position the processing aperture over any location of the first substrate. 
     
     
         19 . The method of  claim 1 , wherein an axis of rotating the first substrate is parallel within 5° to an axis of revolving the processing aperture. 
     
     
         20 . The method of  claim 1 , wherein obtaining the correction factor and determining at least one of the first rotation angle or the first revolution angle are performed by a controller.