Inventor · disambiguated record
Shahab Siddiqui
Also filed as: SIDDIQUI SHAHAB
54 granted patents·16 pending applications·646 citations·filing 2001–2025
98Inventor score
Top patents by PatentIndex Score
70 records- 0197US9741720B1Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FINFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 22, 2017·22 cites·18 claims
- 0297US8373239B2Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectricIBM·Filed 2010·Granted Feb 12, 2013·31 cites·7 claims
- 0396US10106892B1Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the sameGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 23, 2018·422 cites·15 claims
- 0495US8421077B2Replacement gate MOSFET with self-aligned diffusion contactJAIN SAMEER H·Filed 2010·Granted Apr 16, 2013·35 cites·20 claims
- 0594US11515427B2Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitanceIBM·Filed 2020·Granted Nov 29, 2022·4 cites·13 claims
- 0692US11476346B2Vertical transistor having an oxygen-blocking top spacerIBM·Filed 2020·Granted Oct 18, 2022·2 cites·15 claims
- 0790US12076498B2Carrying and storage case for external catheter systemBARD INC C R·Filed 2021·Granted Sep 3, 2024·2 cites·7 claims
- 0890US9515164B2Methods and structure to form high K metal gate stack with single work-function metalIBM·Filed 2014·Granted Dec 6, 2016·7 cites·20 claims
- 0986US8952460B2Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devicesIBM·Filed 2013·Granted Feb 10, 2015·7 cites·7 claims
- 1086US8836037B2Structure and method to form input/output devicesANDO TAKASHI·Filed 2012·Granted Sep 16, 2014·7 cites·20 claims
- 1184US9224826B2Multiple thickness gate dielectrics for replacement gate field effect transistorsIBM·Filed 2014·Granted Dec 29, 2015·6 cites·10 claims
- 1284US8415772B2Method to prevent surface decomposition of III-V compound semiconductorsDE SOUZA JOEL P·Filed 2012·Granted Apr 9, 2013·5 cites·12 claims
- 1384US7407554B2Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solventIBM·Filed 2005·Granted Aug 5, 2008·6 cites·12 claims
- 1483US8941177B2Semiconductor devices having different gate oxide thicknessesADAMS CHARLOTTE DEWAN·Filed 2012·Granted Jan 27, 2015·8 cites·10 claims
- 1582US8349729B2Hybrid bonding interface for 3-dimensional chip integrationIBM·Filed 2012·Granted Jan 8, 2013·6 cites·20 claims
- 1681US8159060B2Hybrid bonding interface for 3-dimensional chip integrationBARTH KARL W·Filed 2009·Granted Apr 17, 2012·10 cites·11 claims
- 1780US9087722B2Semiconductor devices having different gate oxide thicknessesIBM·Filed 2014·Granted Jul 21, 2015·4 cites·3 claims
- 1880US9006064B2Multi-plasma nitridation process for a gate dielectricIBM·Filed 2013·Granted Apr 14, 2015·3 cites·17 claims
- 1980US7645694B2Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solventIBM·Filed 2008·Granted Jan 12, 2010·4 cites·13 claims
- 2080US7531444B2Method to create air gaps using non-plasma processes to damage ILD materialsIBM·Filed 2005·Granted May 12, 2009·10 cites·30 claims
- 2179US8643115B2Structure and method of Tinv scaling for high κ metal gate technologyCHUDZIK MICHAEL P·Filed 2011·Granted Feb 4, 2014·4 cites·16 claims
- 2278US9741657B2TSV deep trench capacitor and anti-fuse structureIBM·Filed 2014·Granted Aug 22, 2017·4 cites·15 claims
- 2377US10361289B1Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 23, 2019·2 cites·18 claims
- 2475US8492290B2Fabrication of silicon oxide and oxynitride having sub-nanometer thicknessCHUDZIK MICHAEL P·Filed 2011·Granted Jul 23, 2013·3 cites·20 claims
- 2574US9040369B2Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectricIBM·Filed 2013·Granted May 26, 2015·3 cites·14 claims
- 2674US9029959B2Composite high-k gate dielectric stack for reducing gate leakageBRODSKY MARYJANE·Filed 2012·Granted May 12, 2015·3 cites·12 claims
- 2773US11876124B2Vertical transistor having an oxygen-blocking layerIBM·Filed 2022·Granted Jan 16, 2024·0 cites·20 claims
- 2873US9087784B2Structure and method of Tinv scaling for high k metal gate technologyIBM·Filed 2014·Granted Jul 21, 2015·2 cites·16 claims
- 2972US10395993B2Methods and structure to form high K metal gate stack with single work-function metalIBM·Filed 2016·Granted Aug 27, 2019·1 cites·20 claims
- 3072US2024416072A1Carrying and Storage Case for External Catheter SystemBARD INC C R·Filed 2024·Application pending·0 cites
- 3169US9252232B2Multi-plasma nitridation process for a gate dielectricGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 2, 2016·1 cites·15 claims
- 3269US9196700B2Multi-plasma nitridation process for a gate dielectricGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 24, 2015·1 cites·16 claims
- 3368US9673108B1Fabrication of higher-K dielectricsIBM·Filed 2015·Granted Jun 6, 2017·1 cites·17 claims
- 3467US9224740B1High-K dielectric structure for deep trench isolationIBM·Filed 2014·Granted Dec 29, 2015·2 cites·10 claims
- 3567US8809152B2Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devicesBRODSKY MARYJANE·Filed 2011·Granted Aug 19, 2014·2 cites·26 claims
- 3667US6638878B2Film planarization for low-k polymers used in semiconductor structuresIBM·Filed 2001·Granted Oct 28, 2003·10 cites·18 claims
- 3765US12068415B2Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitanceIBM·Filed 2022·Granted Aug 20, 2024·0 cites·11 claims
- 3865US11888048B2Gate oxide for nanosheet transistor devicesIBM·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 3965US9806161B1Integrated circuit structure having thin gate dielectric device and thick gate dielectric deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 31, 2017·1 cites·18 claims
- 4065US9099461B2Method of manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices and related design structureCHUDZIK MICHAEL P·Filed 2012·Granted Aug 4, 2015·1 cites·15 claims
- 4164US8431476B2Method to prevent surface decomposition of III-V compound semiconductorsDE SOUZA JOEL P·Filed 2012·Granted Apr 30, 2013·1 cites·20 claims
- 4263US2025195260A1Fluid collection assemblies including at least one securement bodyPUREWICK CORP·Filed 2025·Application pending·0 cites
- 4361US12268627B2Fluid collection assemblies including at least one securement bodyPUREWICK CORP·Filed 2022·Granted Apr 8, 2025·0 cites·12 claims
- 4460US11961895B2Gate stacks with multiple high-κ dielectric layersIBM·Filed 2021·Granted Apr 16, 2024·0 cites·20 claims
- 4560US2019318966A1High k metal gate stack with single work-function metalIBM·Filed 2019·Application pending·0 cites
- 4660US2025287686A1Co-integration of different gate dielectric thicknesses with nanosheet technologyIBM·Filed 2024·Application pending·0 cites
- 4759US11211474B2Gate oxide for nanosheet transistor devicesIBM·Filed 2020·Granted Dec 28, 2021·0 cites·20 claims
- 4858US7718525B2Metal interconnect forming methods and IC chip including metal interconnectIBM·Filed 2007·Granted May 18, 2010·1 cites·15 claims
- 4958US2024269426A1Intermittent Catheters and MethodsBARD INC C R·Filed 2022·Application pending·0 cites
- 5057US2025134696A1Fluid collection assemblies including a porous material including inner and outer layersPUREWICK CORP·Filed 2022·Application pending·0 cites
Showing the top 50 of 70 patent records by PatentIndex Score.
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