Inventor · disambiguated record
Russell C. Zahorik
Also filed as: GORDON BRIAN F · REINBERG ALAN R · ZAHORIK RENEE · ZAHORIK RUSSELL C
47 granted patents·1 pending application·5,176 citations·filing 1991–2010
99Inventor score
Top patents by PatentIndex Score
48 records- 0199US6236059B1Memory cell incorporating a chalcogenide element and method of making sameMICRON TECHNOLOGY INC·Filed 1997·Granted May 22, 2001·727 cites·7 claims
- 0299US6189582B1Small electrode for a chalcogenide switching device and method for fabricating sameMICRON TECHNOLOGY INC·Filed 1999·Granted Feb 20, 2001·445 cites·16 claims
- 0399US6153890AMemory cell incorporating a chalcogenide elementMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 28, 2000·370 cites·7 claims
- 0499US6114713AIntegrated circuit memory cell having a small active area and method of forming sameFiled 1999·Granted Sep 5, 2000·376 cites·30 claims
- 0599US5998244AMemory cell incorporating a chalcogenide element and method of making sameMICRON TECHNOLOGY INC·Filed 1996·Granted Dec 7, 1999·462 cites·19 claims
- 0699US5970336AMethod of making memory cell incorporating a chalcogenide elementMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 19, 1999·439 cites·26 claims
- 0799US5952671ASmall electrode for a chalcogenide switching device and method for fabricating sameMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 14, 1999·431 cites·15 claims
- 0899US5789277AMethod of making chalogenide memory deviceMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 4, 1998·694 cites·25 claims
- 0998US6316784B1Method of making chalcogenide memory deviceMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 13, 2001·239 cites·11 claims
- 1096US6337266B1Small electrode for chalcogenide memoriesMICRON TECHNOLOGY INC·Filed 1996·Granted Jan 8, 2002·150 cites·17 claims
- 1195US6103636AMethod and apparatus for selective removal of material from wafer alignment marksMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 15, 2000·122 cites·64 claims
- 1293US7102151B2Small electrode for a chalcogenide switching device and method for fabricating sameMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 5, 2006·35 cites·16 claims
- 1392US6777705B2X-point memory cellMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 17, 2004·33 cites·60 claims
- 1492US6635951B1Small electrode for chalcogenide memoriesMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 21, 2003·45 cites·10 claims
- 1592US6057602ALow friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafersMICRON TECHNOLOGY INC·Filed 1998·Granted May 2, 2000·98 cites·21 claims
- 1689US6797612B2Method of fabricating a small electrode for chalcogenide memory cellsMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 28, 2004·31 cites·25 claims
- 1788US6329301B1Method and apparatus for selective removal of material from wafer alignment marksMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 11, 2001·25 cites·64 claims
- 1888US5798302ALow friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafersMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 25, 1998·75 cites·15 claims
- 1987US6015977AIntegrated circuit memory cell having a small active area and method of forming sameMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 18, 2000·40 cites·14 claims
- 2085US6531391B2Method of fabricating a conductive path in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 11, 2003·22 cites·44 claims
- 2184US6447634B1Method and apparatus for selective removal of material from wafer alignment marksMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 10, 2002·23 cites·31 claims
- 2282US6534368B2Integrated circuit memory cell having a small active area and method of forming sameMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 18, 2003·16 cites·35 claims
- 2381US7494922B2Small electrode for phase change memoriesMICRON TECHNOLOGY INC·Filed 2007·Granted Feb 24, 2009·5 cites·14 claims
- 2480US6057231AMethod for improved metal fill by treatment of mobility layersMICRON TECHNOLOGY INC·Filed 1999·Granted May 2, 2000·40 cites·50 claims
- 2579US7687881B2Small electrode for phase change memoriesMICRON TECHNOLOGY INC·Filed 2009·Granted Mar 30, 2010·4 cites·20 claims
- 2679US6610610B2Methods for selective removal of material from wafer alignment marksMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 26, 2003·13 cites·64 claims
- 2778US6812139B2Method for metal fill by treatment of mobility layersMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 2, 2004·17 cites·20 claims
- 2874US6492656B2Reduced mask chalcogenide memoryMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 10, 2002·14 cites·29 claims
- 2974US6287919B1Integrated circuit memory cell having a small active area and method of forming sameMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 11, 2001·21 cites·15 claims
- 3073US7453082B2Small electrode for a chalcogenide switching device and method for fabricating sameMICRON TECHNOLOGY INC·Filed 2006·Granted Nov 18, 2008·3 cites·19 claims
- 3172US6530113B2Apparatus for selective removal of material from wafer alignment marksMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 11, 2003·8 cites·31 claims
- 3269US6054768AMetal fill by treatment of mobility layersMICRON TECHNOLOGY INC·Filed 1997·Granted Apr 25, 2000·24 cites·31 claims
- 3367US6482735B1Method for improved metal fill by treatment of mobility layersMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 19, 2002·23 cites·26 claims
- 3465US7273809B2Method of fabricating a conductive path in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 25, 2007·6 cites·21 claims
- 3564US6690077B1Antireflective coating and field emission display device, semiconductor device and wiring line comprising sameMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 10, 2004·6 cites·22 claims
- 3663US6040613AAntireflective coating and wiring line stackMICRON TECHNOLOGY INC·Filed 1996·Granted Mar 21, 2000·21 cites·13 claims
- 3762US6984874B2Semiconductor device with metal fill by treatment of mobility layers including forming a refractory metal nitride using TMEDTMICRON TECHNOLOGY INC·Filed 2004·Granted Jan 10, 2006·6 cites·20 claims
- 3859US5783804AReflectance method for accurate process calibration in semiconductor substrate heat treatmentMICRON TECHNOLOGY INC·Filed 1997·Granted Jul 21, 1998·20 cites·25 claims
- 3958US8053371B2Apparatus and methods for selective removal of material from wafer alignment marksMICRON TECHNOLOGY INC·Filed 2007·Granted Nov 8, 2011·0 cites·18 claims
- 4058US7244681B2Methods for selective removal of material from wafer alignment marksMICRON TECHNOLOGY INC·Filed 2003·Granted Jul 17, 2007·3 cites·19 claims
- 4158US6889698B2Apparatus for selective removal of material from wafer alignment marksMICRON TECHNOLOGY INC·Filed 2003·Granted May 10, 2005·3 cites·17 claims
- 4254US7838416B2Method of fabricating phase change memory cellROUND ROCK RES LLC·Filed 2010·Granted Nov 23, 2010·0 cites·20 claims
- 4354US2008055973A1Small Electrode for a Chacogenide Switching Device and Method for Fabricating SameMICRON TECHNOLOGY INC·Filed 2007·Application pending·0 cites
- 4451US5618461AReflectance method for accurate process calibration in semiconductor wafer heat treatmentMICRON TECHNOLOGY INC·Filed 1994·Granted Apr 8, 1997·18 cites·29 claims
- 4548US8264061B2Phase change memory cell and devices containing sameZAHORIK RUSSELL C·Filed 2010·Granted Sep 11, 2012·0 cites·26 claims
- 4647US6194308B1Method of forming wire lineMICRON TECHNOLOGY INC·Filed 1999·Granted Feb 27, 2001·9 cites·20 claims
- 4743USRE39413ELow friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafersMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 28, 2006·0 cites·21 claims
- 4836US5200359AMethod of decreasing contact resistance between a lower elevation aluminum layer and a higher elevation electrically conductive layerMICRON TECHNOLOGY INC·Filed 1991·Granted Apr 6, 1993·14 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →