Inventor · disambiguated record
Motoshige Igarashi
Also filed as: IGARASHI MOTOSHIGE
31 granted patents·9 pending applications·475 citations·filing 1997–2012
97Inventor score
Files withRENESAS TECH CORP17MITSUBISHI ELECTRIC CORP14RENESAS ELECTRONICS CORP3IGARASHI MOTOSHIGE2AMISHIRO HIROYUKI1
Top patents by PatentIndex Score
40 records- 0195US6288447B1Semiconductor device including a plurality of interconnection layersMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Sep 11, 2001·171 cites·13 claims
- 0294US7439153B2Semiconductor device and manufacturing method thereof for reducing the area of the memory cell regionRENESAS TECH CORP·Filed 2006·Granted Oct 21, 2008·25 cites·4 claims
- 0389US8183114B2Semiconductor device and manufacturing method thereof for reducing the area of the memory cell regionTSUBOI NOBUO·Filed 2009·Granted May 22, 2012·15 cites·5 claims
- 0484US6693820B2Soft error resistant semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Feb 17, 2004·31 cites·7 claims
- 0579US8269284B2Method of manufacturing semiconductor device, and semiconductor deviceNIL KOJI·Filed 2011·Granted Sep 18, 2012·14 cites·20 claims
- 0679US7045865B2Semiconductor device with resistor elements formed on insulating filmRENESAS TECH CORP·Filed 2001·Granted May 16, 2006·18 cites·22 claims
- 0777US6563148B2Semiconductor device with dummy patternsMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 13, 2003·22 cites·3 claims
- 0876US7821078B2Semiconductor device having resistor elements and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Oct 26, 2010·4 cites·10 claims
- 0976US7663193B2Semiconductor device and manufacturing method thereof for reducing the area of the memory cell regionRENESAS TECH CORP·Filed 2008·Granted Feb 16, 2010·4 cites·5 claims
- 1074US6683351B2Semiconductor device having structures that can avoid deterioration caused by the manufacturing processingRENESAS TECH CORP·Filed 2002·Granted Jan 27, 2004·23 cites·17 claims
- 1171US6299314B1Semiconductor device with electrical isolation meansMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 9, 2001·16 cites·20 claims
- 1265US7821076B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Oct 26, 2010·2 cites·4 claims
- 1364US8110878B2Semiconductor device having a plurality of shallow wellsMORINO NAOZUMI·Filed 2011·Granted Feb 7, 2012·2 cites·5 claims
- 1464US6541823B1Semiconductor device including multiple field effect transistors and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Apr 1, 2003·20 cites·2 claims
- 1563US6853030B2Semiconductor device including multiple field effect transistors, with first FETs having oxide spacers and the second FETs having oxide nitride oxidation protectionRENESAS TECH CORP·Filed 2003·Granted Feb 8, 2005·9 cites·2 claims
- 1663US6838732B2Semiconductor device and method for manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Jan 4, 2005·11 cites·11 claims
- 1763US6468857B2Method for forming a semiconductor device having a plurality of circuits partsMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 22, 2002·10 cites·2 claims
- 1863US6037630ASemiconductor device with gate electrode portion and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 14, 2000·22 cites·15 claims
- 1957US6838777B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Granted Jan 4, 2005·7 cites·2 claims
- 2057US6818932B2Semiconductor device with improved soft error resistanceRENESAS TECH CORP·Filed 2001·Granted Nov 16, 2004·7 cites·14 claims
- 2157US6541862B2Semiconductor device including a plurality of interconnection layers, manufacturing method thereof and method of designing semiconductor circuit used in the manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 1, 2003·6 cites·2 claims
- 2253US6593214B1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jul 15, 2003·3 cites·5 claims
- 2351US6841459B2Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Jan 11, 2005·2 cites·5 claims
- 2449US7982271B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2010·Granted Jul 19, 2011·0 cites·4 claims
- 2549US2006175679A1Semiconductor device and method for manufacturing the sameRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 2647US6835647B2Semiconductor device including a plurality of interconnection layers, manufacturing method thereof and method of designing semiconductor circuit used in the manufacturing methodRENESAS TECH CORP·Filed 2003·Granted Dec 28, 2004·2 cites·5 claims
- 2746US6165878AMethod of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 26, 2000·13 cites·18 claims
- 2845US6753246B2Semiconductor device with a first dummy patternRENESAS TECH CORP·Filed 2003·Granted Jun 22, 2004·1 cites·12 claims
- 2944US8089136B2Semiconductor deviceAMISHIRO HIROYUKI·Filed 2010·Granted Jan 3, 2012·0 cites·10 claims
- 3044US2005112832A1Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 3143US6720626B1Semiconductor device having improved gate structureRENESAS TECH CORP·Filed 1998·Granted Apr 13, 2004·8 cites·1 claims
- 3243US2004171225A1Method of manufacturing a semiconductor device having improved gate structure, and a semiconductor device manufactured therebyRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 3342US2003030075A1Semiconductor device and method of arranging transistors for forming TEGMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 3441US6815839B2Soft error resistant semiconductor memory deviceRENESAS TECH CORP·Filed 2003·Granted Nov 9, 2004·3 cites·5 claims
- 3541US2008042218A1Semiconductor memory deviceIGARASHI MOTOSHIGE·Filed 2007·Application pending·0 cites
- 3640US2012187504A1Semiconductor Device Having Shared Contact Hole and a Manufacturing Method ThereofIGARASHI MOTOSHIGE·Filed 2012·Application pending·0 cites
- 3738US2005062099A1Semiconductor device including multiple field effect transistors, with first fets having oxide spacers and the second fets having oxide nitride oxidation protectionMITSUBISHI ELECTRIC CORP·Filed 2004·Application pending·0 cites
- 3836US2002167034A1Semiconductor device evaluation method and apparatus, semiconductor device manufacturing control method, semiconductor device manufacturing method, and recording mediumMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 3935US6730976B2Multilayer gate electrode structure with tilted on implantationRENESAS TECH CORP·Filed 1998·Granted May 4, 2004·4 cites·5 claims
- 4034US2001048162A1Semiconductor device having a structure of a multilayer interconnection unit and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →