Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device of the invention has a plurality of resistor elements formed on an element isolating oxide film in predetermined regions on a surface of a semiconductor substrate. Active regions are furnished close to the resistor elements. This allows the element isolating oxide film near the resistor elements to be divided into suitable strips, forestalling a concave formation at the center of the element isolating oxide film upon polishing of the film by CMP and thereby enhancing dimensional accuracy of the resistor elements upon fabrication.

1 - 20 . (canceled)  
   
   
       21 . A semiconductor device comprising: 
 a semiconductor substrate;    an active region formed on a surface of said semiconductor substrate;    a plurality of isolating regions formed within said active region;    a resistor element formed on each of said isolating regions;    wherein each of said isolating regions are surrounded by said active region.    
   
   
       22 . The semiconductor device according to  claim 21 , 
 wherein said isolating regions are formed with a silicon oxide film buried in a groove on the surface of said semiconductor substrate.    
   
   
       23 . The semiconductor device according to  claim 21 , 
 wherein a plurality of said isolating regions are arranged parallel to each other in perpendicular direction to the long side of said isolating regions.    
   
   
       24 . The semiconductor device according to  claim 23 , 
 wherein a plurality of said isolating regions are arranged evenly spaced apart.    
   
   
       25 . The semiconductor device according to  claim 21 , 
 wherein said resistor element is formed uniformly in same length, same width and same thickness.    
   
   
       26 . A semiconductor device comprising: 
 a semiconductor substrate;    a plurality of isolating regions formed on a surface of said semiconductor substrate;    a resistor element formed on each of said isolating regions;    an active region surrounding each of said isolating regions;    wherein said each of said isolating regions are arranged in the vicinity of each other.    
   
   
       27 . The semiconductor device according to  claim 26 , 
 wherein said isolating regions are formed with a silicon oxide film buried in a groove on the surface of said semiconductor substrate.    
   
   
       28 . The semiconductor device according to  claim 26 , 
 wherein a plurality of said isolating regions are arranged parallel to each other in perpendicular direction to the long side of said isolating region.    
   
   
       29 . The semiconductor device according to  claim 28 , 
 wherein a plurality of said isolating regions are arranged evenly spaced apart.    
   
   
       30 . The semiconductor device according to  claim 26 , 
 wherein said resistor element is formed uniformly in same length, same width and same thickness.