Inventor · disambiguated record
Paul L. King
Also filed as: KING PAUL L · KING PAUL LAWRENCE
34 granted patents·2 pending applications·1,150 citations·filing 1978–2006
98Inventor score
Top patents by PatentIndex Score
36 records- 0197US6465334B1Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·154 cites·18 claims
- 0296US6475874B2Damascene NiSi metal gate high-k transistorADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 5, 2002·137 cites·14 claims
- 0395US6562718B1Process for forming fully silicided gatesADVANCED MICRO DEVICES INC·Filed 2000·Granted May 13, 2003·107 cites·18 claims
- 0495US6300203B1Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 9, 2001·101 cites·2 claims
- 0591US6465309B1Silicide gate transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·57 cites·14 claims
- 0690US6630741B1Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 7, 2003·58 cites·20 claims
- 0790US4679951AElectronic keyboard system and method for reproducing selected symbolic language charactersCORNELL RES FOUNDATION INC·Filed 1980·Granted Jul 14, 1987·73 cites·39 claims
- 0889US6602781B1Metal silicide gate transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 5, 2003·52 cites·27 claims
- 0988US6297107B1High dielectric constant materials as gate dielectricsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 2, 2001·52 cites·13 claims
- 1087US6368950B1Silicide gate transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 9, 2002·41 cites·24 claims
- 1185US6380057B1Enhancement of nickel silicide formation by use of nickel pre-amorphizing implantADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 30, 2002·34 cites·16 claims
- 1284US7755194B1Composite barrier layers with controlled copper interface surface roughnessADVANCED MICRO DEVICES INC·Filed 2006·Granted Jul 13, 2010·10 cites·10 claims
- 1382US6611576B1Automated control of metal thickness during film depositionADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 26, 2003·19 cites·7 claims
- 1482US6559051B1Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted May 6, 2003·33 cites·19 claims
- 1578US6610181B1Method of controlling the formation of metal layersADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 26, 2003·18 cites·28 claims
- 1678US6342414B1Damascene NiSi metal gate high-k transistorADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 29, 2002·24 cites·18 claims
- 1775US6717236B1Method of reducing electromigration by forming an electroplated copper-zinc interconnect and a semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 6, 2004·22 cites·18 claims
- 1871US6605513B2Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processingADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 12, 2003·16 cites·10 claims
- 1971US6372644B1Hydrogen passivated silicon nitride spacers for reduced nickel silicide bridgingADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 16, 2002·16 cites·14 claims
- 2070US7033940B1Method of forming composite barrier layers with controlled copper interface surface roughnessADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 25, 2006·13 cites·8 claims
- 2169US6469387B1Semiconductor device formed by calcium doping a copper surface using a chemical solutionADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 22, 2002·11 cites·11 claims
- 2267US4181194ASafety clamp device and apparatus utilizing sameITT·Filed 1978·Granted Jan 1, 1980·18 cites·20 claims
- 2364US7064067B1Reduction of lateral silicide growth in integrated circuit technologyADVANCED MICRO DEVICES INC·Filed 2004·Granted Jun 20, 2006·11 cites·20 claims
- 2464US7015076B1Selectable open circuit and anti-fuse element, and fabrication method thereforADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 21, 2006·10 cites·10 claims
- 2563US6784506B2Silicide process using high K-dielectricsADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 31, 2004·10 cites·2 claims
- 2660US6444580B1Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 3, 2002·6 cites·10 claims
- 2759US4399890AIndependently mounted fall prevention apparatusITT·Filed 1981·Granted Aug 23, 1983·23 cites·4 claims
- 2858US6624074B1Method of fabricating a semiconductor device by calcium doping a copper surface using a chemical solutionADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 23, 2003·5 cites·11 claims
- 2954US6764912B1Passivation of nitride spacerADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 20, 2004·6 cites·11 claims
- 3054US6621165B1Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surfaceFiled 2002·Granted Sep 16, 2003·4 cites·19 claims
- 3154US6458679B1Method of making silicide stop layer in a damascene semiconductor structureADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 1, 2002·5 cites·9 claims
- 3250US7005357B2Low stress sidewall spacer in integrated circuit technologyADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 28, 2006·2 cites·15 claims
- 3349US7250667B2Selectable open circuit and anti-fuse elementADVANCED MICRO DEVICES INC·Filed 2006·Granted Jul 31, 2007·0 cites·8 claims
- 3445US7151020B1Conversion of transition metal to silicide through back end processing in integrated circuit technologyADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 19, 2006·2 cites·10 claims
- 3538US2003034533A1Silicide stop layer in a damascene semiconductor structureADVANCED MICRO DEVICES INC·Filed 2002·Application pending·0 cites
- 3636US2003072695A1Method of removing oxidized portions at an interface of a metal surface and capping layer in a semiconductor metallization layerFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →