Inventor · disambiguated record
Tae-Yeon Seong
Also filed as: SEONG TAE-YEON
48 granted patents·13 pending applications·430 citations·filing 1998–2024
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD21SEONG TAE YEON11KWANGJU INST SCI & TECH10SAMSUNG LED CO LTD4UNIV KOREA RES & BUS FOUND4
Top patents by PatentIndex Score
61 records- 0195US6326294B1Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devicesKWANGJU INST SCI & TECH·Filed 2001·Granted Dec 4, 2001·111 cites·14 claims
- 0293US7491979B2Reflective electrode and compound semiconductor light emitting device including the sameSAMSUNG ELECTRO MECH·Filed 2007·Granted Feb 17, 2009·16 cites·26 claims
- 0391US11961750B2Magnetic transfer apparatus and fabrication method of the sameUNIV KOREA RES & BUS FOUND·Filed 2021·Granted Apr 16, 2024·2 cites·7 claims
- 0491US7910935B2Group-III nitride-based light emitting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 22, 2011·21 cites·20 claims
- 0590US8525215B2Light emitting device, method of manufacturing the same, light emitting device package, and lighting systemCHOI KWANG KI·Filed 2011·Granted Sep 3, 2013·7 cites·18 claims
- 0689US7485479B2Nitride-based light emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 3, 2009·13 cites·22 claims
- 0785US8487344B2Optical device and method of fabricating the sameSEONG TAE-YEON·Filed 2006·Granted Jul 16, 2013·11 cites·20 claims
- 0884US9224910B2Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substratesLG INNOTEK CO LTD·Filed 2014·Granted Dec 29, 2015·4 cites·20 claims
- 0984US8877530B2Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substratesLG INNOTEK CO LTD·Filed 2013·Granted Nov 4, 2014·4 cites·19 claims
- 1080US7737456B2Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the sameSAMSUNG ELECTRO MECH·Filed 2007·Granted Jun 15, 2010·6 cites·22 claims
- 1178US7285857B2GaN-based III—V group compound semiconductor device and p-type electrode for the sameKWANGJU INST SCI & TECH·Filed 2004·Granted Oct 23, 2007·22 cites·22 claims
- 1276US12266555B2Magnetic transfer apparatus and fabrication method of the sameUNIV KOREA RES & BUS FOUND·Filed 2024·Granted Apr 1, 2025·0 cites·5 claims
- 1375US7880176B2Top-emitting light emitting diodes and methods of manufacturing thereofSAMSUNG LED CO LTD·Filed 2005·Granted Feb 1, 2011·5 cites·19 claims
- 1474US10181550B2Method for fabricating high-efficiency light emitting diode having light emitting window electrode structureSEONG TAE YEON·Filed 2017·Granted Jan 15, 2019·2 cites·19 claims
- 1574US9978911B2Light-emitting diode device for enhancing light extraction efficiency and current injection efficiencySEONG TAE YEON·Filed 2017·Granted May 22, 2018·2 cites·15 claims
- 1674US7541207B2Light emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·4 cites·20 claims
- 1773US10333026B2Lateral light emitting diode device and method for fabricating the sameSEONG TAE YEON·Filed 2017·Granted Jun 25, 2019·2 cites·15 claims
- 1873US8227283B2Top-emitting N-based light emitting device and method of manufacturing the sameSEONG TAE-YEON·Filed 2007·Granted Jul 24, 2012·6 cites·11 claims
- 1973US7205576B2Light emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 17, 2007·17 cites·6 claims
- 2073US7180094B2Nitride-based light emitting device and method of manufacturing the sameKWANGJU INST SCI & TECH·Filed 2004·Granted Feb 20, 2007·18 cites·21 claims
- 2171US7964889B2Nitride-based light-emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 21, 2011·3 cites·3 claims
- 2271US7372081B2Nitride light emitting device and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 13, 2008·16 cites·8 claims
- 2371US7193249B2Nitride-based light emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 20, 2007·15 cites·33 claims
- 2471US6169297B1Metal thin film with ohmic contact for light emit diodesKWANGJU INST SCI & TECH·Filed 1998·Granted Jan 2, 2001·51 cites·3 claims
- 2570US8202751B2Flip-chip light emitting diodes and method of manufacturing thereofSEONG TAE-YEON·Filed 2010·Granted Jun 19, 2012·1 cites·7 claims
- 2670US7666693B2Top-emitting nitride-based light emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 23, 2010·3 cites·8 claims
- 2769US7358541B2Flip-chip light emitting diode and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 15, 2008·16 cites·4 claims
- 2868US8580668B2Method of forming ohmic contact layer and method of fabricating light emitting device having ohmic contact layerCHO JAE-HEE·Filed 2006·Granted Nov 12, 2013·3 cites·19 claims
- 2967US7190002B2Flip-chip nitride light emitting device and method of manufacturing thereofKWANGJU INST SCI & TECH·Filed 2004·Granted Mar 13, 2007·10 cites·7 claims
- 3066US8809895B2Light emitting device and method of fabricating the sameCHOI KWANG KI·Filed 2011·Granted Aug 19, 2014·2 cites·17 claims
- 3166US7872271B2Flip-chip light emitting diodes and method of manufacturing thereofSAMSUNG LED CO LTD·Filed 2005·Granted Jan 18, 2011·2 cites·30 claims
- 3264US7491564B2Flip-chip nitride light emitting device and method of manufacturing thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 17, 2009·2 cites·17 claims
- 3364US7417264B2Top-emitting nitride-based light emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 26, 2008·11 cites·7 claims
- 3462US7736924B2Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the sameSAMSUNG ELECTRO MECH·Filed 2009·Granted Jun 15, 2010·1 cites·11 claims
- 3561US7550374B2Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 23, 2009·2 cites·9 claims
- 3659US8946745B2Supporting substrate for manufacturing vertically-structured semiconductor light-emitting device and semiconductor light-emitting device using the supporting substrateSEONG TAE YEON·Filed 2009·Granted Feb 3, 2015·1 cites·23 claims
- 3758US7960746B2Low resistance electrode and compound semiconductor light emitting device including the sameSAMSUNG LED CO LTD·Filed 2004·Granted Jun 14, 2011·6 cites·11 claims
- 3858US6989598B2Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 24, 2006·7 cites·15 claims
- 3958US2011127567A1Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substratesUNIV IND & ACAD COLLABORATION·Filed 2009·Application pending·0 cites
- 4054US2009124030A1Nitride-Based Light-Emitting Device and Method of Manufacturing the SameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4153US8053786B2Top-emitting light emitting diodes and methods of manufacturing thereofSAMSUNG LED CO LTD·Filed 2010·Granted Nov 8, 2011·0 cites·11 claims
- 4253US2008145962A1Nitride light emitting device and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4351US7462877B2Nitride-based light emitting device, and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 9, 2008·3 cites·12 claims
- 4451US2010221897A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 4550US2008258133A1Semiconductor Device and Method of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4649US8405109B2Low resistance electrode and compound semiconductor light emitting device including the sameKWAK JOON SEOP·Filed 2011·Granted Mar 26, 2013·0 cites·10 claims
- 4749US2005212006A1GaN-based III - V group compound semiconductor light emitting device and method of fabricating the sameKWANGJU INST SCI & TECH·Filed 2004·Application pending·0 cites
- 4847US2006043388A1Reflective electrode and compound semiconductor light emitting device including the sameKWANGJU INST SCI & TECH·Filed 2005·Application pending·0 cites
- 4946US7687908B2Thin film electrode for high-quality GaN optical devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 30, 2010·2 cites·13 claims
- 5046US2021391501A1Micro light-emitting diode including optimized passivation layer and method of fabricating the sameUNIV KOREA RES & BUS FOUND·Filed 2020·Application pending·0 cites
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →