Nitride light emitting device and manufacturing method thereof

Abstract

A nitride LED having a laminated structure in which a substrate, a n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked, and a manufacturing method thereof, are provided. In the nitride LED, the multi-ohmic contact layer includes multiple layers of a first transparent film layer/silver/second transparent film layer. In the nitride LED and a manufacturing method thereof, ohmic contact characteristics with respect to the p-type cladding layer are enhanced, thereby exhibiting a good current-voltage characteristic. Also, since the transparent electrodes have a high light transmitting property, the light emitting efficiency of the device is increased.

1 - 8 . (canceled) 
   
   
       9 . A method of manufacturing a nitride light emitting device (LED) having an active layer between a n-type cladding layer and a p-type cladding layer, the method comprising:
 (a) forming a multi-ohmic contact layer on a substrate by sequentially depositing a first transparent film layer, a metallic layer containing silver as a main component, and a second transparent film layer on the p-type cladding layer; and   (b) annealing the resultant product of step (a),   wherein the first transparent film layer and the second transparent film layer are formed of one selected from the group consisting of a transparent oxide, a transparent nitride, and a transparent dielectric.   
   
   
       10 . The method of  claim 9 , wherein the transparent oxide is an oxide containing at least one selected from the group consisting of indium (In), tin (Sn), gallium (Ga), cadmium (Cd), vanadium (V), and aluminum (Al),
 the transparent nitride is formed of a nitrogen (N), and at least one selected from the group consisting of titanium (Ti), vanadium (V), chromium (Cr), zirconium (Zr), hafnium (Hf), tantalum (Ta), tungsten (W), molybdenum (Mo), and scandium (Sc), and   the transparent dielectric is one selected from the group consisting of ZnS, ZnTe, ZnSe, and MgF 2 .   
   
   
       11 . The method of  claim 9 , before forming the first transparent film layer, further comprising forming an intermediate layer on the p-type cladding layer, the intermediate layer being formed of at least one element selected from the group consisting of nickel (Ni), cobalt (Co), Zinc (Zn), palladium (Pd), platinum (Pt), copper (Cu), iridium (Ir), and ruthenium (Ru), an alloy containing the selected element, an oxide, and a solid solution. 
   
   
       12 . The method of  claim 11 , wherein the oxide is formed of at least one element selected from the group consisting of indium (In), tin (Sn), gallium (Ga), cadmium (Cd), aluminum (Al), zinc (Zn), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium, ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), and lanthanum (La). 
   
   
       13 . The method of  claim 9 , further comprising forming a reflective layer on the multi-ohmic contact layer, the reflective layer being formed of at least one element selected from the group consisting of silver (Ag), silver oxide (AgO 2 ), aluminum (Al), zinc (Zn), magnesium (Mg), ruthenium (Ru), titanium (Ti), ruthenium (Rh), chromium (Cr), and platinum (Pt). 
   
   
       14 . The method of  claim 13 , further comprising forming an agglomeration preventing layer on the reflective layer, the agglomeration preventing layer being formed of at least one element selected from the group consisting of nickel (Ni), zinc (Zn), magnesium (Mg), platinum (Pt), copper (Cu), palladium (Pd), chromium (Cr), and tungsten (W), an alloy containing the selected element, an oxide, a solid solution, and titanium nitride (TiN).