Inventor · disambiguated record
Christoph Wasshuber
Also filed as: WASSHUBER CHRISTOPH · WASSHUBER CHRISTOPH A
19 granted patents·5 pending applications·461 citations·filing 1999–2009
95Inventor score
Top patents by PatentIndex Score
24 records- 0195US7208379B2Pitch multiplication processTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 24, 2007·188 cites·24 claims
- 0294US6806151B2Methods and apparatus for inducing stress in a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 19, 2004·74 cites·6 claims
- 0388US6487112B1Single-electron memoryFiled 1999·Granted Nov 26, 2002·77 cites·20 claims
- 0483US7407850B2N+ poly on high-k dielectric for semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 5, 2008·9 cites·16 claims
- 0582US6458666B2Spot-implant method for MOS transistor applicationsTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 1, 2002·28 cites·9 claims
- 0679US7550343B2Forming a semiconductor structure in manufacturing a semiconductor device using one or more epitaxial growth processesTEXAS INSTRUMENTS INC·Filed 2006·Granted Jun 23, 2009·7 cites·8 claims
- 0775US6780742B1Undulated moat for reducing contact resistanceTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 24, 2004·20 cites·8 claims
- 0871US6524930B1Method for forming a bottom corner rounded STITEXAS INSTRUMENTS INC·Filed 2002·Granted Feb 25, 2003·18 cites·21 claims
- 0971US6432781B2Inverted MOSFET processTEXAS INSTRUMENTS INC·Filed 2001·Granted Aug 13, 2002·15 cites·9 claims
- 1062US6844566B2Suspended gate single-electron deviceTEXAS INSTRUMENTS INC·Filed 2003·Granted Jan 18, 2005·14 cites·15 claims
- 1160US7619241B2Variable capacitor single-electron transistor including a P-N junction gate electrodeTEXAS INSTRUMENTS INC·Filed 2006·Granted Nov 17, 2009·3 cites·6 claims
- 1258US7939398B2Method to manufacture silicon quantum islands and single-electron devicesTEXAS INSTRUMENTS INC·Filed 2009·Granted May 10, 2011·1 cites·7 claims
- 1351US2008272442A1N+ poly on high-k dielectric for semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 1449US7166858B2Variable capacitor single-electron deviceTEXAS INSTRUMENTS INC·Filed 2004·Granted Jan 23, 2007·4 cites·9 claims
- 1549US7122413B2Method to manufacture silicon quantum islands and single-electron devicesTEXAS INSTRUMENTS INC·Filed 2003·Granted Oct 17, 2006·3 cites·14 claims
- 1648US7427543B2Method to improve drive current by increasing the effective area of an electrodeTEXAS INSTRUMENTS INC·Filed 2006·Granted Sep 23, 2008·0 cites·6 claims
- 1746US2007007596A1Method to manufacture silicon quantum islands and single-electron devicesTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 1845US7339214B2Methods and apparatus for inducing stress in a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 4, 2008·0 cites·13 claims
- 1939US7109556B2Method to improve drive current by increasing the effective area of an electrodeTEXAS INSTRUMENTS INC·Filed 2004·Granted Sep 19, 2006·0 cites·11 claims
- 2038US8581233B2Variable capacitor single-electron transistor including a P-N junction gate electrodeWASSHUBER CHRISTOPH·Filed 2009·Granted Nov 12, 2013·0 cites·6 claims
- 2138US2005104156A1Forming a semiconductor structure in manufacturing a semiconductor device using one or more epitaxial growth processesTEXAS INSTRUMENTS INC·Filed 2003·Application pending·0 cites
- 2234US2003038305A1Method for manufacturing and structure of transistor with low-k spacerFiled 2002·Application pending·0 cites
- 2333US7018881B2Suspended gate single-electron deviceTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 28, 2006·0 cites·5 claims
- 2433US2002064946A1Field effect transistor with silicide gateFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →