Inventor · disambiguated record
Wen-Kuan Yeh
Also filed as: YEH WEN-KUAN
47 granted patents·3 pending applications·1,072 citations·filing 1995–2020
98Inventor score
Files withUNITED MICROELECTRONICS CORP37NAT APPLIED RES LABORATORIES6NAT SCIENCE COUNCIL1UNITED MICOELECTRONICS CORP1UNITED MICROELECTRICS CORP1
Top patents by PatentIndex Score
50 records- 0195US6319807B1Method for forming a semiconductor device by using reverse-offset spacer processUNITED MICROELECTRONICS CORP·Filed 2000·Granted Nov 20, 2001·95 cites·13 claims
- 0295US6294834B1Structure of combined passive elements and logic circuit on a silicon on insulator waferUNITED MICROELECTRONICS CORP·Filed 2000·Granted Sep 25, 2001·117 cites·8 claims
- 0392US6064107AGate structure of a semiconductor device having an air gapUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 16, 2000·88 cites·10 claims
- 0483US10134735B2Heterogeneously integrated semiconductor device and manufacturing method thereofNAT APPLIED RES LABORATORIES·Filed 2017·Granted Nov 20, 2018·3 cites·18 claims
- 0583US5946598AProcess of fabricating metal gate electrodeUNITED MICROELECTRONICS CORP·Filed 1996·Granted Aug 31, 1999·69 cites·23 claims
- 0678US10217500B1Inductive spin-orbit torque device and method for fabricating the sameNAT APPLIED RES LABORATORIES·Filed 2017·Granted Feb 26, 2019·1 cites·9 claims
- 0777US6177336B1Method for fabricating a metal-oxide semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 23, 2001·40 cites·20 claims
- 0876US6323073B1Method for forming doped regions on an SOI deviceUNITED MICROELECTRONICS CORP·Filed 2001·Granted Nov 27, 2001·22 cites·16 claims
- 0976US5770508AMethod of forming lightly doped drains in metalic oxide semiconductor componentsUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jun 23, 1998·39 cites·18 claims
- 1075US10446694B2Field-effect transistor structure having two-dimensional transition metal dichalcogenideNAT APPLIED RES LABORATORIES·Filed 2017·Granted Oct 15, 2019·2 cites·11 claims
- 1175US6153478ASTI process for eliminating kink effectUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 28, 2000·46 cites·20 claims
- 1274US6015746AMethod of fabricating semiconductor device with a gate-side air-gap structureUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 18, 2000·30 cites·24 claims
- 1372US6048771AShallow trench isolation techniqueUNITED MICROELECTRONICS CORP·Filed 1998·Granted Apr 11, 2000·41 cites·19 claims
- 1472US5786255AMethod of forming a metallic oxide semiconductorUNITED MIROELECTRONICS CORP·Filed 1997·Granted Jul 28, 1998·38 cites·9 claims
- 1570US6365468B1Method for forming doped p-type gate with anti-reflection layerUNITED MICROELECTRONICS CORP·Filed 2000·Granted Apr 2, 2002·16 cites·15 claims
- 1669US6004852AManufacture of MOSFET having LDD source/drain regionUNITED MICROELECTRONICS CORP·Filed 1997·Granted Dec 21, 1999·37 cites·1 claims
- 1767US11515307B2Heterogeneously integrated semiconductor device and manufacturing method thereofNAT APPLIED RES LABORATORIES·Filed 2020·Granted Nov 29, 2022·0 cites·20 claims
- 1865US6114233ADual damascene process using low-dielectric constant materialsUNITED MICROELECTRONICS CORP·Filed 1999·Granted Sep 5, 2000·28 cites·22 claims
- 1964US6100569ASemiconductor device with shared contactUNITED MICROELECTRONICS CORP·Filed 1999·Granted Aug 8, 2000·20 cites·11 claims
- 2064US6083783AMethod of manufacturing complementary metallic-oxide-semiconductorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jul 4, 2000·24 cites·18 claims
- 2163US6180514B1Method for forming interconnect using dual damasceneFiled 1999·Granted Jan 30, 2001·29 cites·14 claims
- 2263US6008100AMetal-oxide semiconductor field effect transistor device fabrication processUNITED MICROELECTRONICS CORP·Filed 1998·Granted Dec 28, 1999·27 cites·24 claims
- 2362US6451675B1Semiconductor device having varied dopant density regionsUNITED MICROELECTRONICS CORP·Filed 2000·Granted Sep 17, 2002·10 cites·6 claims
- 2462US6165857AMethod for forming a transistor with selective epitaxial growth filmUNITED MICOELECTRONICS CORP·Filed 1999·Granted Dec 26, 2000·22 cites·23 claims
- 2561US10180509B2Environment monitoring system and vibration sensing deviceNAT APPLIED RES LABORATORIES·Filed 2015·Granted Jan 15, 2019·1 cites·7 claims
- 2660US6476448B2Front stage process of a fully depleted silicon-on-insulator device and a structure thereofUNITED MICROELECTRONICS CORP·Filed 2001·Granted Nov 5, 2002·8 cites·5 claims
- 2760US6153483AMethod for manufacturing MOS deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 28, 2000·24 cites·15 claims
- 2860US6008118AMethod of fabricating a barrier layerUNITED MICROELECTRONICS CORP·Filed 1998·Granted Dec 28, 1999·25 cites·13 claims
- 2959US10727231B2Heterogeneously integrated semiconductor device and manufacturing method thereofNAT APPLIED RES LABORATORIES·Filed 2018·Granted Jul 28, 2020·0 cites·20 claims
- 3059US6509218B2Front stage process of a fully depleted silicon-on-insulator deviceUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jan 21, 2003·7 cites·17 claims
- 3158US6083827AMethod for fabricating local interconnectUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jul 4, 2000·22 cites·20 claims
- 3254US6376882B1Electrostatic discharge protection apparatus with silicon control rectifier and the method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2000·Granted Apr 23, 2002·5 cites·7 claims
- 3353US6455913B2Copper fuse for integrated circuitUNITED MICROELECTRONICS CORP·Filed 2000·Granted Sep 24, 2002·5 cites·7 claims
- 3453US6306701B1Self-aligned contact processUNITED MICROELECTRONICS CORP·Filed 1999·Granted Oct 23, 2001·18 cites·9 claims
- 3551US6548360B2Electrostatic discharge protection apparatus with silicon control rectifier and the method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2001·Granted Apr 15, 2003·4 cites·9 claims
- 3651US5920782AMethod for improving hot carrier degradationUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jul 6, 1999·16 cites·13 claims
- 3750US6211023B1Method for fabricating a metal-oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Apr 3, 2001·12 cites·20 claims
- 3850US6022785AMethod of fabricating a metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 8, 2000·12 cites·6 claims
- 3948US6117743AMethod of manufacturing MOS device using anti reflective coatingUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 12, 2000·13 cites·17 claims
- 4046US6057189AMethod of fabricating capacitor utilizing an ion implantation methodUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 2, 2000·9 cites·39 claims
- 4144US6274448B1Method of suppressing junction capacitance of source/drain regionsUNITED MICROELECTRONICS CORP·Filed 1998·Granted Aug 14, 2001·10 cites·17 claims
- 4243US6197642B1Method for manufacturing gate terminalUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 6, 2001·8 cites·18 claims
- 4341US6281134B1Method for combining logic circuit and capacitorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Aug 28, 2001·9 cites·25 claims
- 4440US6277699B1Method for forming a metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Aug 21, 2001·6 cites·16 claims
- 4538US5861329AMethod of fabricating metal-oxide semiconductor (MOS) transistors with reduced level of degradation caused by hot carriersUNITED MICROELECTRICS CORP·Filed 1996·Granted Jan 19, 1999·7 cites·8 claims
- 4637US2002025638A1Reducing lithography limitation by reverse-offset spacer processUNITED MICROELECTRONICS CORP·Filed 2001·Application pending·0 cites
- 4736US6200870B1Method for forming gateUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 13, 2001·5 cites·9 claims
- 4834US2002039830A1Salicidation process for a fully depleted silicon-on-insulator deviceFiled 2001·Application pending·0 cites
- 4931US2001038126A1Structure for esd protection with single crystal silicon sided junction diodeFiled 1999·Application pending·0 cites
- 5029US5670016AMethod for cleaning substrate prior to tungsten depositionNAT SCIENCE COUNCIL·Filed 1995·Granted Sep 23, 1997·2 cites·20 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →