Assignee

UNITED MICOELECTRONICS CORP

US·2 granted patents·32 citations·filing 1999–1999

Technology mixH10D2 H10B1 H10W1

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2 records

0162US6165857AMethod for forming a transistor with selective epitaxial growth filmUNITED MICOELECTRONICS CORP·Filed 1999·Granted Dec 26, 2000·22 cites·23 claims
0239US6207579B1Method of fabricating self-aligned nodeUNITED MICOELECTRONICS CORP·Filed 1999·Granted Mar 27, 2001·10 cites·20 claims

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