Inventor · disambiguated record
William J. Cote
Also filed as: COTE WILLIAM · COTE WILLIAM J · COTE WILLIAM JOSEPH
45 granted patents·3 pending applications·3,161 citations·filing 1987–2021
99Inventor score
Top patents by PatentIndex Score
48 records- 0198US8350583B2Probe-able voltage contrast test structuresIBM·Filed 2009·Granted Jan 8, 2013·84 cites·5 claims
- 0298US7518190B2Grounding front-end-of-line structures on a SOI substrateIBM·Filed 2006·Granted Apr 14, 2009·94 cites·3 claims
- 0397US9213060B2Probe-able voltage contrast test structuresCOTE WILLIAM J·Filed 2012·Granted Dec 15, 2015·58 cites·6 claims
- 0497US9103875B2Probe-able voltage contrast test structuresCOTE WILLIAM J·Filed 2012·Granted Aug 11, 2015·58 cites·3 claims
- 0597US9097760B2Probe-able voltage contrast test structuresCOTE WILLIAM J·Filed 2012·Granted Aug 4, 2015·57 cites·2 claims
- 0697US5534106AApparatus for processing semiconductor wafersTOSHIBA KK·Filed 1994·Granted Jul 9, 1996·180 cites·23 claims
- 0797US4910155AWafer flood polishingIBM·Filed 1988·Granted Mar 20, 1990·222 cites·20 claims
- 0897US4838991AProcess for defining organic sidewall structuresIBM·Filed 1988·Granted Jun 13, 1989·362 cites·4 claims
- 0996US7195971B2Method of manufacturing an intralevel decoupling capacitorIBM·Filed 2005·Granted Mar 27, 2007·26 cites·18 claims
- 1096US4956313AVia-filling and planarization techniqueIBM·Filed 1988·Granted Sep 11, 1990·207 cites·10 claims
- 1196US4786360AAnisotropic etch process for tungsten metallurgyIBM·Filed 1987·Granted Nov 22, 1988·229 cites·9 claims
- 1294US8928057B2Uniform finFET gate heightIBM·Filed 2012·Granted Jan 6, 2015·20 cites·7 claims
- 1394US6882015B2Intralevel decoupling capacitor, method of manufacture and testing circuit of the sameIBM·Filed 2003·Granted Apr 19, 2005·49 cites·16 claims
- 1494US6649531B2Process for forming a damascene structureIBM·Filed 2001·Granted Nov 18, 2003·87 cites·20 claims
- 1594US6483172B1Semiconductor device structure with hydrogen-rich layer for facilitating passivation of surface statesSIEMENS AG·Filed 2000·Granted Nov 19, 2002·90 cites·11 claims
- 1693US6348076B1Slurry for mechanical polishing (CMP) of metals and use thereofIBM·Filed 1999·Granted Feb 19, 2002·147 cites·26 claims
- 1792US7030031B2Method for forming damascene structure utilizing planarizing material coupled with diffusion barrier materialIBM·Filed 2003·Granted Apr 18, 2006·69 cites·94 claims
- 1892US6375693B1Chemical-mechanical planarization of barriers or liners for copper metallurgyIBM·Filed 1999·Granted Apr 23, 2002·98 cites·20 claims
- 1992US5308438AEndpoint detection apparatus and method for chemical/mechanical polishingIBM·Filed 1992·Granted May 3, 1994·197 cites·14 claims
- 2092US4919750AEtching metal films with complexing chloride plasmaIBM·Filed 1989·Granted Apr 24, 1990·132 cites·7 claims
- 2191US5558563AMethod and apparatus for uniform polishing of a substrateIBM·Filed 1995·Granted Sep 24, 1996·97 cites·7 claims
- 2291US5262354ARefractory metal capped low resistivity metal conductor lines and viasSIEMENS AG·Filed 1992·Granted Nov 16, 1993·187 cites·17 claims
- 2389US8470706B2Methods to mitigate plasma damage in organosilicate dielectricsARNOLD JOHN C·Filed 2012·Granted Jun 25, 2013·8 cites·15 claims
- 2489US6812193B2Slurry for mechanical polishing (CMP) of metals and use thereofIBM·Filed 2002·Granted Nov 2, 2004·53 cites·29 claims
- 2588US7480990B2Method of making conductor contacts having enhanced reliabilityIBM·Filed 2006·Granted Jan 27, 2009·17 cites·20 claims
- 2688US6677637B2Intralevel decoupling capacitor, method of manufacture and testing circuit of the sameIBM·Filed 1999·Granted Jan 13, 2004·66 cites·19 claims
- 2785US5234868AMethod for determining planarization endpoint during chemical-mechanical polishingIBM·Filed 1992·Granted Aug 10, 1993·92 cites·24 claims
- 2884US8481423B2Methods to mitigate plasma damage in organosilicate dielectricsARNOLD JOHN C·Filed 2007·Granted Jul 9, 2013·8 cites·20 claims
- 2983US7732866B2Grounding front-end-of-line structures on a SOI substrateIBM·Filed 2009·Granted Jun 8, 2010·9 cites·20 claims
- 3078US5593537AApparatus for processing semiconductor wafersTOSHIBA KK·Filed 1996·Granted Jan 14, 1997·37 cites·11 claims
- 3175US6548901B1Cu/low-k BEOL with nonconcurrent hybrid dielectric interfaceIBM·Filed 2000·Granted Apr 15, 2003·22 cites·21 claims
- 3273US6093508ADual damascene structure formed in a single photoresist filmIBM·Filed 1999·Granted Jul 25, 2000·35 cites·4 claims
- 3368US5906911AProcess of forming a dual damascene structure in a single photoresist filmIBM·Filed 1997·Granted May 25, 1999·30 cites·16 claims
- 3467US6743268B2Chemical-mechanical planarization of barriers or liners for copper metallurgyIBM·Filed 2002·Granted Jun 1, 2004·9 cites·8 claims
- 3566US8288281B2Method for reducing amine based contaminantsCHEN XIAOMENG·Filed 2010·Granted Oct 16, 2012·1 cites·19 claims
- 3664US7153776B2Method for reducing amine based contaminantsIBM·Filed 2003·Granted Dec 26, 2006·6 cites·12 claims
- 3760US8293634B2Structures and methods for improving solder bump connections in semiconductor devicesANDERSON FELIX P·Filed 2008·Granted Oct 23, 2012·1 cites·14 claims
- 3857US8340800B2Monitoring a process sector in a production facilityCOTE WILLIAM·Filed 2008·Granted Dec 25, 2012·4 cites·19 claims
- 3956US7323382B2Intralevel decoupling capacitor, method of manufacture and testing circuit of the sameIBM·Filed 2007·Granted Jan 29, 2008·0 cites·14 claims
- 4055US11588958B2Probe assembly for process vesselsCHEN CHEN·Filed 2021·Granted Feb 21, 2023·0 cites·19 claims
- 4155US7803708B2Method for reducing amine based contaminantsIBM·Filed 2006·Granted Sep 28, 2010·0 cites·10 claims
- 4248US2012129336A1Structures and methods for improving solder bump connections in semiconductor devicesANDERSON FELIX P·Filed 2012·Application pending·0 cites
- 4344US8242544B2Semiconductor structure having reduced amine-based contaminantsCHEN XIAOMENG·Filed 2004·Granted Aug 14, 2012·0 cites·26 claims
- 4442US2015111373A1Reducing gate height variation in rmg processGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 4541US8748252B1Replacement metal gate transistors using bi-layer hardmaskIBM·Filed 2012·Granted Jun 10, 2014·0 cites·20 claims
- 4641US2003087043A1Low k dielectric film deposition processIBM·Filed 2001·Application pending·0 cites
- 4737USRE38029EWafer polishing and endpoint detectionIBM·Filed 1992·Granted Mar 11, 2003·7 cites·42 claims
- 4834US5753303AProcess for the elimination of tungsten oxidation with inert gas stabilization in chemical vapor deposition processesIBM·Filed 1996·Granted May 19, 1998·6 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →