Inventor · disambiguated record
Yinxiao Yang
Also filed as: YANG YINXIAO
4 granted patents·1 pending application·32 citations·filing 2014–2018
75Inventor score
Files withGLOBALFOUNDRIES INC5
Top patents by PatentIndex Score
5 records- 0193US10396078B2Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 27, 2019·9 cites·16 claims
- 0293US10020307B1Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 10, 2018·9 cites·11 claims
- 0392US9634084B1Conformal buffer layer in source and drain regions of fin-type transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 25, 2017·12 cites·19 claims
- 0467US9536985B2Epitaxial growth of material on source/drain regions of FinFET structureGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 3, 2017·2 cites·11 claims
- 0537US2019326112A1DEFECT FREE SILICON GERMANIUM (SiGe) EPITAXY GROWTH IN A LOW-K SPACER CAVITY AND METHOD FOR PRODUCING THE SAMEGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →