Inventor · disambiguated record
Kazuya Ohuchi
Also filed as: OHUCHI KAZUYA
20 granted patents·9 pending applications·812 citations·filing 1995–2014
96Inventor score
Top patents by PatentIndex Score
29 records- 0199US6525403B2Semiconductor device having MIS field effect transistors or three-dimensional structureTOSHIBA KK·Filed 2001·Granted Feb 25, 2003·482 cites·25 claims
- 0287US5463234AHigh-speed semiconductor gain memory cell with minimal area occupancyTOSHIBA KK·Filed 1995·Granted Oct 31, 1995·98 cites·16 claims
- 0385US7456096B2Method of manufacturing silicide layer for semiconductor deviceTOSHIBA KK·Filed 2006·Granted Nov 25, 2008·8 cites·6 claims
- 0480US6878579B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Apr 12, 2005·24 cites·2 claims
- 0578US6744104B1Semiconductor integrated circuit including insulated gate field effect transistor and method of manufacturing the sameTOSHIBA KK·Filed 1999·Granted Jun 1, 2004·42 cites·28 claims
- 0678US6498374B1MOS semiconductor device having gate insulating film containing nitrogenTOSHIBA KK·Filed 2000·Granted Dec 24, 2002·21 cites·8 claims
- 0778US5734181ASemiconductor device and manufacturing method thereforTOSHIBA KK·Filed 1996·Granted Mar 31, 1998·53 cites·17 claims
- 0869US7902612B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Mar 8, 2011·2 cites·13 claims
- 0967US6891232B2Semiconductor device having an injection substance to knock against oxygen and manufacturing method of the sameTOSHIBA KK·Filed 2003·Granted May 10, 2005·11 cites·9 claims
- 1067US6841429B2Method of manufacturing a semiconductor device having a silicide filmTOSHIBA KK·Filed 2003·Granted Jan 11, 2005·10 cites·7 claims
- 1164US6642585B2Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the sameTOSHIBA KK·Filed 1999·Granted Nov 4, 2003·19 cites·12 claims
- 1263US7875976B2Semiconductor device including a silicide layer and a dielectric layerTOSHIBA KK·Filed 2007·Granted Jan 25, 2011·2 cites·24 claims
- 1361US7141467B2Semiconductor device having metal silicide films formed on source and drain regions and method for manufacturing the sameTOSHIBA KK·Filed 2004·Granted Nov 28, 2006·9 cites·15 claims
- 1457US6897534B2Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted May 24, 2005·6 cites·3 claims
- 1554US6791106B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Sep 14, 2004·5 cites·10 claims
- 1652US6762468B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Jul 13, 2004·4 cites·6 claims
- 1751US5917223ASemiconductor device having salicide layerTOSHIBA KK·Filed 1996·Granted Jun 29, 1999·12 cites·7 claims
- 1847US7183168B2Method of manufacturing a semiconductor device having a silicide filmTOSHIBA KK·Filed 2004·Granted Feb 27, 2007·2 cites·12 claims
- 1944US2005189600A1Semiconductor device having gate electrode of staked structure including polysilicon layer and metal layer and method of manufacturing the sameTOSHIBA KK·Filed 2005·Application pending·0 cites
- 2043US7148096B2Method of manufacturing a semiconductor device having a gate electrode containing polycrystalline silicon-germaniumTOSHIBA KK·Filed 2004·Granted Dec 12, 2006·1 cites·5 claims
- 2143US6677660B1Semiconductor device having silicide filmTOSHIBA KK·Filed 2002·Granted Jan 13, 2004·1 cites·13 claims
- 2243US2013049200A1Silicidation of device contacts using pre-amorphization implant of semiconductor substrateBESSER PAUL R·Filed 2012·Application pending·0 cites
- 2343US2015263117A1Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2014·Application pending·0 cites
- 2441US2013221422A1Memory device and method of manufacture thereofTOSHIBA KK·Filed 2013·Application pending·0 cites
- 2541US2013049199A1Silicidation of device contacts using pre-amorphization implant of semiconductor substrateBESSER PAUL R·Filed 2011·Application pending·0 cites
- 2640US2005035413A1Semiconductor device and method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2004·Application pending·0 cites
- 2738US2005282324A1Semiconductor device containing distorted silicon layer formed on silicon germanium layerTOSHIBA KK·Filed 2005·Application pending·0 cites
- 2838US2003119235A1MOS semiconductor device having gate insulating film containing nitrogen and method of manufacturing the sameTOSHIBA KK·Filed 2002·Application pending·0 cites
- 2937US2012242356A1Specific contact resistivity measurement method, semiconductor device for specific contact resistivity measurement, and method for manufacturing the sameOHUCHI KAZUYA·Filed 2011·Application pending·0 cites
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