Semiconductor device having gate electrode of staked structure including polysilicon layer and metal layer and method of manufacturing the same

Abstract

The present invention provides a semiconductor device, comprising a gate electrode of a stacked structure consisting of a polysilicon layer and a metal layer, a cap insulating film formed on the gate electrode, and a gate side wall film formed on the side wall of the gate electrode. The cap insulating film consists of an insulating film containing a silicon oxide-based layer and a silicon nitride layer and serves to protect the upper surface of the gate electrode. Further, the gate side wall film consists of an insulating film containing a silicon nitride film and a silicon oxide film and serves to protect the side surface of the gate electrode.

1 - 6 . (canceled)  
   
   
       7 . A semiconductor device comprising: 
 a gate electrode having a stacked structure of a polysilicon layer and a metal layer;    a cap insulating film formed on an upper surface of the gate electrode,    wherein said cap insulating film including a first silicon oxide film formed on the upper surface of the gate electrode, a first silicon nitride film formed on the first silicon oxide film, and a second silicon oxide film formed on the first silicon nitride film; and    a side wall insulating film formed on a side wall of the gate electrode, said side wall insulating film including a silicon oxide film and a silicon nitride film of at least two layers.