Inventor · disambiguated record
Hiroki Ohbo
Also filed as: OHBO HIROKI
19 granted patents·6 pending applications·238 citations·filing 2000–2014
94Inventor score
Top patents by PatentIndex Score
25 records- 0195US6720196B2Nitride-based semiconductor element and method of forming nitride-based semiconductorSANYO ELECTRIC CO·Filed 2002·Granted Apr 13, 2004·97 cites·26 claims
- 0280US8064492B2Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatusBESSHO YASUYUKI·Filed 2010·Granted Nov 22, 2011·5 cites·3 claims
- 0380US6836496B1Semiconductor laser deviceSANYO ELECTRIC CO·Filed 2000·Granted Dec 28, 2004·16 cites·18 claims
- 0478US7279344B2Method of forming a nitride-based semiconductorSANYO ELECTRIC CO·Filed 2006·Granted Oct 9, 2007·4 cites·5 claims
- 0578US6534800B1Semiconductor device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2000·Granted Mar 18, 2003·26 cites·9 claims
- 0676US6566677B2Nitride-based semiconductor device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2001·Granted May 20, 2003·16 cites·11 claims
- 0773US9240504B2Solar cell and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2014·Granted Jan 19, 2016·1 cites·10 claims
- 0873US6756245B2Method of fabricating semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Jun 29, 2004·19 cites·9 claims
- 0973US6734503B2Nitride-based semiconductor elementSANYO ELECTRIC CO·Filed 2002·Granted May 11, 2004·16 cites·32 claims
- 1070US6759139B2Nitride-based semiconductor element and method of forming nitride-based semiconductorSANYO ELECTRIC CO·Filed 2002·Granted Jul 6, 2004·13 cites·23 claims
- 1169US7512167B2Integrated semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2005·Granted Mar 31, 2009·3 cites·13 claims
- 1267US7567605B2Semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2006·Granted Jul 28, 2009·3 cites·17 claims
- 1361US7109530B2Nitride-based semiconductor elementSANYO ELECTRIC CO·Filed 2004·Granted Sep 19, 2006·5 cites·5 claims
- 1460US6872967B2Nitride-based semiconductor device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2003·Granted Mar 29, 2005·6 cites·5 claims
- 1560US6713845B2Nitride-based semiconductor elementSANYO ELECTRIC CO·Filed 2002·Granted Mar 30, 2004·5 cites·7 claims
- 1657US8275013B2Semiconductor laser device and method of manufacturing the sameBESSHO YASUYUKI·Filed 2008·Granted Sep 25, 2012·1 cites·19 claims
- 1755US7961768B2Integrated semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2008·Granted Jun 14, 2011·0 cites·5 claims
- 1852US2008248603A1Nitride-based semiconductor element and method of preparing nitride-based semiconductorSANYO ELECTRIC CO·Filed 2008·Application pending·0 cites
- 1949US6821807B2Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor deviceSANYO ELECTRIC CO·Filed 2001·Granted Nov 23, 2004·2 cites·4 claims
- 2048US2011211609A1Integrated semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2011·Application pending·0 cites
- 2147US8258048B2Semiconductor laser device and method of fabricating the sameYAMAGUCHI TSUTOMU·Filed 2009·Granted Sep 4, 2012·0 cites·13 claims
- 2246US2009323750A1Semiconductor laser device and method of manufacturing the same as well as optical pickupSANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 2344US2007223548A1Semiconductor laser deviceSANYO ELECTRIC CO·Filed 2007·Application pending·0 cites
- 2443US2012033701A1Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatusBESSHO YASUYUKI·Filed 2011·Application pending·0 cites
- 2540US2002038870A1Nitride-based semiconductor element and method of preparing nitride-based semiconductorSANYO ELECTRIC CO·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →