Integrated semiconductor laser device and method of fabricating the same

Abstract

An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

1 - 26 . (canceled) 
     
     
         27 . An integrated semiconductor laser device comprising:
 a first semiconductor laser element including a first emission region and having a projecting portion; and   a second semiconductor laser element including a second emission region and having a recess portion, wherein   said first semiconductor laser element has an active layer located under said projecting portion,   said first emission region is located in said active layer of said first semiconductor laser element,   said projecting portion is fitted to said recess portion through a solder layer, and   said first emission region and said second emission region are aligned along the same line extending a direction of stacking of semiconductor layers.   
     
     
         28 . The integrated semiconductor laser device according to  claim 27 , wherein
 said first emission region is located under said projecting portion.   
     
     
         29 . The integrated semiconductor laser device according to  claim 27 , wherein
 said second semiconductor laser element has a ridge and an active layer above said ridge, and   said second emission region is located in said active layer of said second semiconductor laser element and is located above said ridge.   
     
     
         30 . The integrated semiconductor laser device according to  claim 29 , wherein
 said ridge projects toward said projecting portion.   
     
     
         31 . The integrated semiconductor laser device according to  claim 27 , wherein
 at least either said first semiconductor laser element or said second semiconductor laser element further includes a substrate formed with said projecting portion or said recess portion.   
     
     
         32 . The integrated semiconductor laser device according to  claim 27 , wherein
 said projecting portion is so tapered that the width of the tapered end is smaller than the width of the base, and   said recess portion is so tapered that the width of the bottom is smaller than the width of the open end.   
     
     
         33 . The integrated semiconductor laser device according to  claim 27 , wherein
 said first semiconductor laser element further includes a first electrode arranged on the side closer to said second semiconductor laser element for supplying electric power to said first emission region,   said second semiconductor laser element further includes a second electrode arranged on the side closer to said first semiconductor laser element for supplying electric power to said second emission region, and   an insulating film is arranged at least between said first electrode and said second electrode.   
     
     
         34 . A method of fabricating an integrated semiconductor laser device, comprising steps of:
 bonding a first semiconductor laser element having either a projecting portion or a recess portion and a second semiconductor laser element having either a recess portion or a projecting portion to each other while fitting said projecting portion into said recess portion; and   simultaneously cleaving said first semiconductor laser element and said second semiconductor laser element bonded to each other.   
     
     
         35 . The method of fabricating an integrated semiconductor laser device according to  claim 34 , wherein
 said first semiconductor laser element includes a first emission region,   said second semiconductor laser element includes a second emission region, and   said step of bonding said first semiconductor laser element and said second semiconductor laser element to each other includes a step of bonding said first semiconductor laser element and said second semiconductor laser element to each other for aligning said first emission region and said second emission region substantially along the same line extending a direction of stacking of semiconductor layers.   
     
     
         36 . The method of fabricating an integrated semiconductor laser device according to  claim 35 , wherein
 said first semiconductor laser element further includes a first electrode arranged on the side closer to said second semiconductor laser element for supplying electric power to said first emission region,   said second semiconductor laser element further includes a second electrode arranged on the side closer to said first semiconductor laser element for supplying electric power to said second emission region, and   said step of bonding said first semiconductor laser element and said second semiconductor laser element to each other includes a step of bonding said first semiconductor laser element and said second semiconductor laser element to each other through a bonding layer so that said first electrode and said second electrically conduct with each other.   
     
     
         37 . The method of fabricating an integrated semiconductor laser device according to  claim 35 , wherein
 said first semiconductor laser element further includes a first electrode arranged on the side closer to said second semiconductor laser element for supplying electric power to said first emission region,   said second semiconductor laser element further includes a second electrode arranged on the side closer to said first semiconductor laser element for supplying electric power to said second emission region, and   said step of bonding said first semiconductor laser element and said second semiconductor laser element to each other includes a step of arranging an insulating film at least between said first electrode and said second electrode and bonding said first semiconductor laser element and said second semiconductor laser element to each other through said insulating film.   
     
     
         38 . The method of fabricating an integrated semiconductor laser device according to  claim 37 , wherein
 said integrated semiconductor laser device further comprises a third semiconductor laser element including a third emission region and a third electrode arranged on the side closer to said first semiconductor laser element for supplying electric power to said third emission region, and   said step of bonding said first semiconductor laser element and said second semiconductor laser element to each other includes a step of arranging said insulating film also between said third electrode and said first electrode in addition to between said first electrode and said second electrode and bonding said first semiconductor laser element and said second semiconductor laser element to each other through said insulating film while bonding said first semiconductor laser element and said third semiconductor laser element to each other through said insulating film.