Inventor · disambiguated record
William Hunks
Also filed as: HUNKS WILLIAM
21 granted patents·9 pending applications·595 citations·filing 2007–2018
95Inventor score
Top patents by PatentIndex Score
30 records- 0198US9337054B2Precursors for silicon dioxide gap fillHUNKS WILLIAM·Filed 2008·Granted May 10, 2016·443 cites·20 claims
- 0298US7838329B2Antimony and germanium complexes useful for CVD/ALD of metal thin filmsADVANCED TECH MATERIALS·Filed 2007·Granted Nov 23, 2010·55 cites·21 claims
- 0397US9537095B2Tellurium compounds useful for deposition of tellurium containing materialsENTEGRIS INC·Filed 2014·Granted Jan 3, 2017·14 cites·20 claims
- 0496US8796068B2Tellurium compounds useful for deposition of tellurium containing materialsADVANCED TECH MATERIALS·Filed 2013·Granted Aug 5, 2014·12 cites·10 claims
- 0595US8008117B2Antimony and germanium complexes useful for CVD/ALD of metal thin filmsADVANCED TECH MATERIALS·Filed 2010·Granted Aug 30, 2011·14 cites·20 claims
- 0693US8877549B2Low temperature deposition of phase change memory materialsADVANCED TECH MATERIALS·Filed 2014·Granted Nov 4, 2014·7 cites·19 claims
- 0793US8288198B2Low temperature deposition of phase change memory materialsROEDER JEFFREY F·Filed 2007·Granted Oct 16, 2012·11 cites·18 claims
- 0893US8268665B2Antimony and germanium complexes useful for CVD/ALD of metal thin filmsHUNKS WILLIAM·Filed 2011·Granted Sep 18, 2012·12 cites·20 claims
- 0992US8709863B2Antimony and germanium complexes useful for CVD/ALD of metal thin filmsADVANCED TECH MATERIALS·Filed 2012·Granted Apr 29, 2014·9 cites·22 claims
- 1088US8093140B2Amorphous Ge/Te deposition processCHEN PHILIP S H·Filed 2008·Granted Jan 10, 2012·11 cites·20 claims
- 1173US9637395B2Fluorine free tungsten ALD/CVD processENTEGRIS INC·Filed 2013·Granted May 2, 2017·1 cites·9 claims
- 1273US9219232B2Antimony and germanium complexes useful for CVD/ALD of metal thin filmsENTEGRIS INC·Filed 2014·Granted Dec 22, 2015·1 cites·20 claims
- 1371US9034688B2Antimony compounds useful for deposition of antimony-containing materialsADVANCED TECH MATERIALS·Filed 2014·Granted May 19, 2015·2 cites·20 claims
- 1464US11476158B2Cobalt deposition selectivity on copper and dielectricsENTEGRIS INC·Filed 2015·Granted Oct 18, 2022·1 cites·16 claims
- 1563US2009215225A1Tellurium compounds useful for deposition of tellurium containing materialsADVANCED TECH MATERIALS·Filed 2009·Application pending·0 cites
- 1662US8679894B2Low temperature deposition of phase change memory materialsROEDER JEFFREY F·Filed 2012·Granted Mar 25, 2014·0 cites·20 claims
- 1761US10043658B2Precursors for silicon dioxide gap fillENTEGRIS INC·Filed 2018·Granted Aug 7, 2018·0 cites·16 claims
- 1861US8674127B2Antimony compounds useful for deposition of antimony-containing materialsCHEN TIANNIU·Filed 2009·Granted Mar 18, 2014·1 cites·26 claims
- 1958US2012108038A1Amorphous ge/te deposition processCHEN PHILIP S H·Filed 2012·Application pending·0 cites
- 2058US2009087561A1Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin filmsADVANCED TECH MATERIALS·Filed 2008·Application pending·0 cites
- 2157US9373677B2Doping of ZrO2 for DRAM applicationsCISSELL JULIE·Filed 2011·Granted Jun 21, 2016·1 cites·20 claims
- 2252US2016225615A1Precursors for silicon dioxide gap fillENTEGRIS INC·Filed 2016·Application pending·0 cites
- 2351US10870921B2Cyclopentadienyl titanium alkoxides with ozone activated ligands for ALD of TiO2ENTEGRIS INC·Filed 2014·Granted Dec 22, 2020·0 cites·1 claims
- 2449US2009275164A1Bicyclic guanidinates and bridging diamides as cvd/ald precursorsADVANCED TECH MATERIALS·Filed 2009·Application pending·0 cites
- 2547US2010279011A1Novel bismuth precursors for cvd/ald of thin filmsADVANCED TECH MATERIALS·Filed 2008·Application pending·0 cites
- 2646US8053375B1Super-dry reagent compositions for formation of ultra low k filmsADVANCED TECH MATERIALS·Filed 2007·Granted Nov 8, 2011·0 cites·25 claims
- 2746US2016343795A1DOPING OF ZrO2 FOR DRAM APPLICATIONSENTEGRIS INC·Filed 2016·Application pending·0 cites
- 2839US9269582B2Cluster ion implantation of arsenic and phosphorusBYL OLEG·Filed 2012·Granted Feb 23, 2016·0 cites·15 claims
- 2938US2012196449A1Zirconium, hafnium and titanium precursors for atomic layer deposition of corresponding metal-containing filmsXU CHONGYING·Filed 2012·Application pending·0 cites
- 3032US2017103888A1AMINE CATALYSTS FOR LOW TEMPERATURE ALD/CVD SiO2 DEPOSITION USING HEXACHLORODISILANE/H2OENTEGRIS INC·Filed 2016·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when William Hunks files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →