Inventor · disambiguated record
Dong-Seog Eun
Also filed as: EUN DONG SEOG
24 granted patents·4 pending applications·204 citations·filing 2001–2023
96Inventor score
Top patents by PatentIndex Score
28 records- 0197US9716104B2Vertical memory devices having dummy channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 25, 2017·39 cites·19 claims
- 0295US10964720B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 30, 2021·4 cites·11 claims
- 0395US10153292B2Vertical memory devices having dummy channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 11, 2018·12 cites·13 claims
- 0495US9991271B2Integrated circuit device including vertical memory device and method of manufacturing the sameKANG SHIN HWAN·Filed 2016·Granted Jun 5, 2018·26 cites·19 claims
- 0595US9773806B1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 26, 2017·21 cites·20 claims
- 0693US10204919B2Vertical memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 12, 2019·11 cites·19 claims
- 0791US10103165B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 16, 2018·9 cites·20 claims
- 0891US9640549B2Vertical memory device with gate lines at the same level connectedLEE SEOK-WON·Filed 2014·Granted May 2, 2017·16 cites·19 claims
- 0990US10396092B2Vertical memory device and method of manufacturing the sameKANAMORI KOHJI·Filed 2017·Granted Aug 27, 2019·8 cites·17 claims
- 1087US10886289B2Integrated circuit device including vertical memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 5, 2021·3 cites·12 claims
- 1187US9972636B2Vertical memory devices having dummy channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 15, 2018·4 cites·21 claims
- 1283US10546874B2Semiconductor memory device having a channel structure vertically passing through a plurality of memory layers and having memory cell blocks and dummy memory cell blocksSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 28, 2020·5 cites·20 claims
- 1383US9281414B2Vertical cell-type semiconductor device having protective patternWON JIN-YEON·Filed 2014·Granted Mar 8, 2016·10 cites·22 claims
- 1482US11716849B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 1, 2023·1 cites·20 claims
- 1580USRE50547EIntegrated circuit device including vertical memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·32 claims
- 1678USRE50225EIntegrated circuit device including vertical memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 1776US7700426B2Nonvolatile memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 20, 2010·7 cites·13 claims
- 1874US10854631B2Semiconductor memory device having a channel structure vertically passing through a plurality of memory layers and having memory cell blocks and dummy memory cell blocksSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 1, 2020·1 cites·4 claims
- 1970US6737335B2Shallow trench isolation type semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 18, 2004·14 cites·3 claims
- 2066US2023328989A1Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2165US6586804B2Shallow trench isolation type semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 1, 2003·10 cites·6 claims
- 2261US7348267B2Flash memory and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 25, 2008·2 cites·15 claims
- 2356US10211220B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 19, 2019·0 cites·20 claims
- 2454US2019115366A1Vertical memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 2552US7736989B2Method of forming semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 15, 2010·1 cites·19 claims
- 2644US7541243B2Methods of forming integrated circuit devices having gate electrodes formed on non-uniformly thick gate insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·0 cites·9 claims
- 2741US2016149010A1Vertical cell-type semiconductor device having protective patternWON JIN-YEON·Filed 2016·Application pending·0 cites
- 2838US2004241956A1Methods of forming trench isolation regions using chemical mechanical polishing and etchingFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →