Inventor · disambiguated record
Philip Swab
Also filed as: SWAB PHILIP · SWAB PHILIP F · SWAB PHILIP F S
22 granted patents·4 pending applications·262 citations·filing 1999–2021
96Inventor score
Files withUNITY SEMICONDUCTOR CORP13HEFEI RELIANCE MEMORY LTD7RINERSON DARRELL3BEKAERT SA NV1CHEVALLIER CHRISTOPHE1
Top patents by PatentIndex Score
26 records- 0196US9570515B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Feb 14, 2017·12 cites·19 claims
- 0295US9806130B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Oct 31, 2017·10 cites·27 claims
- 0395US9159408B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·12 cites·15 claims
- 0495US8675389B2Memory element with a reactive metal layerCHEVALLIER CHRISTOPHE·Filed 2011·Granted Mar 18, 2014·13 cites·28 claims
- 0595US7889539B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Feb 15, 2011·19 cites·20 claims
- 0695US7633790B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Dec 15, 2009·23 cites·8 claims
- 0794US7394679B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jul 1, 2008·20 cites·17 claims
- 0893US8062942B2Method for fabricating multi-resistive state memory devicesRINERSON DARRELL·Filed 2008·Granted Nov 22, 2011·17 cites·19 claims
- 0992US10340312B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Jul 2, 2019·6 cites·20 claims
- 1092US7082052B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Jul 25, 2006·35 cites·15 claims
- 1190US9159913B2Two-terminal reversibly switchable memory deviceUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·6 cites·20 claims
- 1290US6972985B2Memory element having islandsUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Dec 6, 2005·55 cites·13 claims
- 1389US10224480B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Mar 5, 2019·4 cites·18 claims
- 1479US6486597B1Electrically tunable low secondary electron emission diamond-like coatings and process for depositing coatingsBEKAERT SA NV·Filed 1999·Granted Nov 26, 2002·28 cites·19 claims
- 1575US11672189B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 1674US11502249B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Nov 15, 2022·0 cites·19 claims
- 1772US11063214B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Jul 13, 2021·0 cites·20 claims
- 1871US10680171B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Jun 9, 2020·0 cites·20 claims
- 1970US9831425B2Two-terminal reversibly switchable memory deviceUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Nov 28, 2017·1 cites·20 claims
- 2066US8611130B2Method for fabricating multi-resistive state memory devicesRINERSON DARRELL·Filed 2011·Granted Dec 17, 2013·1 cites·28 claims
- 2162US10833125B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Nov 10, 2020·0 cites·19 claims
- 2253US9570165B21D-2R memory architectureRAMBUS INC·Filed 2014·Granted Feb 14, 2017·0 cites·15 claims
- 2349US2011186803A1Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2011·Application pending·0 cites
- 2449US2012087174A1Two Terminal Re Writeable Non Volatile Ion Transport Memory DeviceRINERSON DARRELL·Filed 2011·Application pending·0 cites
- 2547US2009303772A1Two-Terminal Reversibly Switchable Memory DeviceUNITY SEMICONDUCTOR CORP·Filed 2009·Application pending·0 cites
- 2643US2006171200A1Memory using mixed valence conductive oxidesUNITY SEMICONDUCTOR CORP·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →