Inventor · disambiguated record
John Sanchez
Also filed as: SANCHEZ JOHN · SANCHEZ JOHN E · SANCHEZ JOHN E JR · SANCHEZ JR JOHN
36 granted patents·5 pending applications·660 citations·filing 1995–2021
98Inventor score
Files withUNITY SEMICONDUCTOR CORP15ADVANCED MICRO DEVICES INC10HEFEI RELIANCE MEMORY LTD7ADESTO TECHNOLOGIES CORP3RINERSON DARRELL3
Top patents by PatentIndex Score
41 records- 0196US9570515B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Feb 14, 2017·12 cites·19 claims
- 0295US9806130B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Oct 31, 2017·10 cites·27 claims
- 0395US9159408B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·12 cites·15 claims
- 0495US8675389B2Memory element with a reactive metal layerCHEVALLIER CHRISTOPHE·Filed 2011·Granted Mar 18, 2014·13 cites·28 claims
- 0595US7889539B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Feb 15, 2011·19 cites·20 claims
- 0695US7633790B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Dec 15, 2009·23 cites·8 claims
- 0794US7394679B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jul 1, 2008·20 cites·17 claims
- 0893US8062942B2Method for fabricating multi-resistive state memory devicesRINERSON DARRELL·Filed 2008·Granted Nov 22, 2011·17 cites·19 claims
- 0993US6723635B1Protection low-k ILD during damascene processing with thin linerADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 20, 2004·65 cites·15 claims
- 1092US10340312B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Jul 2, 2019·6 cites·20 claims
- 1192US7082052B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Jul 25, 2006·35 cites·15 claims
- 1291US6822437B1Interconnect test structure with slotted feeder lines to prevent stress-induced voidsADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 23, 2004·53 cites·32 claims
- 1391US6657304B1Conformal barrier liner in an integrated circuit interconnectADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 2, 2003·45 cites·6 claims
- 1490US9159913B2Two-terminal reversibly switchable memory deviceUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·6 cites·20 claims
- 1590US6972985B2Memory element having islandsUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Dec 6, 2005·55 cites·13 claims
- 1689US10224480B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Mar 5, 2019·4 cites·18 claims
- 1789US7326979B2Resistive memory device with a treated interfaceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Feb 5, 2008·51 cites·8 claims
- 1887US6989604B1Conformal barrier liner in an integrated circuit interconnectADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 24, 2006·31 cites·14 claims
- 1987US6525428B1Graded low-k middle-etch stop layer for dual-inlaid patterningADVANCE MICRO DEVICES INC·Filed 2002·Granted Feb 25, 2003·46 cites·17 claims
- 2084US9252359B2Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereofADESTO TECHNOLOGIES CORP·Filed 2013·Granted Feb 2, 2016·4 cites·30 claims
- 2184US6836017B2Protection of low-k ILD during damascene processing with thin linerADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 28, 2004·30 cites·9 claims
- 2277US7701834B2Movable terminal in a two terminal memory arrayUNITY SEMICONDUCTOR CORP·Filed 2005·Granted Apr 20, 2010·4 cites·11 claims
- 2377US6727592B1Copper interconnect with improved barrier layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 27, 2004·23 cites·16 claims
- 2475US11672189B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 2574US11502249B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Nov 15, 2022·0 cites·19 claims
- 2674US6869878B1Method of forming a selective barrier layer using a sacrificial layerADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 22, 2005·20 cites·25 claims
- 2772US11063214B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Jul 13, 2021·0 cites·20 claims
- 2871US10680171B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Jun 9, 2020·0 cites·20 claims
- 2971US5597458AMethod for producing alloy films using cold sputter deposition processADVANCED MICRO DEVICES INC·Filed 1995·Granted Jan 28, 1997·40 cites·12 claims
- 3070US9831425B2Two-terminal reversibly switchable memory deviceUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Nov 28, 2017·1 cites·20 claims
- 3166US8611130B2Method for fabricating multi-resistive state memory devicesRINERSON DARRELL·Filed 2011·Granted Dec 17, 2013·1 cites·28 claims
- 3262US10833125B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Nov 10, 2020·0 cites·19 claims
- 3359US6617176B1Method of determining barrier layer effectiveness for preventing metallization diffusion by forming a test specimen device and using a metal penetration measurement technique for fabricating a production semiconductor device and a test specimen device thereby formedADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 9, 2003·6 cites·20 claims
- 3458US7026225B1Semiconductor component and method for precluding stress-induced void formation in the semiconductor componentADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 11, 2006·8 cites·18 claims
- 3552US9818939B2Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereofADESTO TECHNOLOGIES CORP·Filed 2016·Granted Nov 14, 2017·0 cites·27 claims
- 3652US2014293676A1Programmable impedance memory elements and corresponding methodsADESTO TECHNOLOGIES CORP·Filed 2014·Application pending·0 cites
- 3749US2011186803A1Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2011·Application pending·0 cites
- 3849US2012087174A1Two Terminal Re Writeable Non Volatile Ion Transport Memory DeviceRINERSON DARRELL·Filed 2011·Application pending·0 cites
- 3947US2009303772A1Two-Terminal Reversibly Switchable Memory DeviceUNITY SEMICONDUCTOR CORP·Filed 2009·Application pending·0 cites
- 4045US9791257B1Determining a thickness of individual layers of a plurality of metal layersAMAZON TECH INC·Filed 2015·Granted Oct 17, 2017·0 cites·20 claims
- 4143US2006171200A1Memory using mixed valence conductive oxidesUNITY SEMICONDUCTOR CORP·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →