Inventor · disambiguated record
Wen-Jya Liang
Also filed as: LIANG WEN-JYA
7 granted patents·1 pending application·218 citations·filing 1995–2008
87Inventor score
Top patents by PatentIndex Score
8 records- 0190US7321139B2Transistor layout for standard cell with optimized mechanical stress effectTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 22, 2008·20 cites·14 claims
- 0289US6277709B1Method of forming shallow trench isolation structureVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Aug 21, 2001·78 cites·12 claims
- 0386US5780339AMethod for fabricating a semiconductor memory cell in a DRAMVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Jul 14, 1998·60 cites·18 claims
- 0483US6602749B2Capacitor under bitline (CUB) memory cell structure with reduced parasitic capacitanceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 5, 2003·28 cites·16 claims
- 0562US5807782AMethod of manufacturing a stacked capacitor having a fin-shaped storage electrode on a dynamic random access memory cellVANGUARD INT SEMICONDUCT CORP·Filed 1995·Granted Sep 15, 1998·24 cites·20 claims
- 0642US6249018B1Fabrication method to approach the conducting structure of a DRAM cell with straightforward bit lineVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Jun 19, 2001·8 cites·5 claims
- 0737US8125028B2Semiconductor devices for high power applicationTSAI HUNG-SHERN·Filed 2008·Granted Feb 28, 2012·0 cites·7 claims
- 0830US2001010958A1Fabrication method to approach the conducting structure of a dram cell with straight forward bit lineVANGUARD INT SEMICONDUCT CORP·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →