Inventor · disambiguated record
Kiyokazu Nakagawa
Also filed as: NAKAGAWA KIYOKAZU · NAKAGAWA KIYOKAZU J
19 granted patents·4 pending applications·524 citations·filing 1986–2025
95Inventor score
Top patents by PatentIndex Score
23 records- 0197US5241197ATransistor provided with strained germanium layerHITACHI LTD·Filed 1991·Granted Aug 31, 1993·188 cites·22 claims
- 0294US5523592ASemiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the sameHITACHI LTD·Filed 1994·Granted Jun 4, 1996·145 cites·24 claims
- 0392US5416331ASurface atom fabrication method and apparatusHITACHI LTD·Filed 1992·Granted May 16, 1995·69 cites·36 claims
- 0480US6903372B1Semiconductor device, method of making the same and liquid crystal display deviceHITACHI LTD·Filed 2000·Granted Jun 7, 2005·23 cites·6 claims
- 0578US12410989B1Sight mount and related method of useLEAPERS INC·Filed 2025·Granted Sep 9, 2025·0 cites·20 claims
- 0677US7579229B2Semiconductor device and semiconductor substrateRENESAS TECH CORP·Filed 2008·Granted Aug 25, 2009·5 cites·7 claims
- 0777US6545294B1Electronic apparatus having semiconductor device including plurality of transistors formed on a polycrystalline layered structure in which the number of crystal grains in each polycrystalline layer is gradually reduced from lower to upper layerHITACHI LTD·Filed 2000·Granted Apr 8, 2003·17 cites·2 claims
- 0874US5689494ASurface atom fabrication method and apparatusHITACHI LTD·Filed 1995·Granted Nov 18, 1997·22 cites·20 claims
- 0972US7317207B2Semiconductor device, method of making the same and liquid crystal display deviceHITACHI LTD·Filed 2005·Granted Jan 8, 2008·4 cites·2 claims
- 1067US8304810B2Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germaniumSUGII NOBUYUKI·Filed 2009·Granted Nov 6, 2012·3 cites·21 claims
- 1164US12281873B1Sight mount and related method of useLEAPERS INC·Filed 2024·Granted Apr 22, 2025·0 cites·16 claims
- 1264US9972499B2Method for forming metal-semiconductor alloy using hydrogen plasmaFUJI ELECTRIC CO LTD·Filed 2016·Granted May 15, 2018·1 cites·14 claims
- 1353US6888162B2Electronic apparatus having polycrystalline semiconductor thin film structureHITACHI LTD·Filed 2003·Granted May 3, 2005·3 cites·12 claims
- 1451US2024112906A1Manufacturing method of insulation filmABIT TECH CO LTD·Filed 2021·Application pending·0 cites
- 1550US6727514B2Thin-film semiconductor integrated circuit device and picture display device with using thereof and manufacturing method thereofHITACHI LTD·Filed 2001·Granted Apr 27, 2004·4 cites·8 claims
- 1648US2008111134A1Semiconductor device, method of making the same and liquid crystal display deviceYAMAGUCHI SHINYA·Filed 2008·Application pending·0 cites
- 1746US10176981B2Semiconductor device and semiconductor device manufacturing methodFUJI ELECTRIC CO LTD·Filed 2018·Granted Jan 8, 2019·0 cites·3 claims
- 1845US5338942ASemiconductor projections having layers with different lattice constantsHITACHI LTD·Filed 1993·Granted Aug 16, 1994·14 cites·8 claims
- 1941US4785340ASemiconductor device having doping multilayer structureAGENCY IND SCIENCE TECHN·Filed 1986·Granted Nov 15, 1988·11 cites·6 claims
- 2040US2005017236A1Semiconductor device and semiconductor substrateHITACHI LTD·Filed 2004·Application pending·0 cites
- 2138US6529304B1Optical communication equipment and systemHITACHI LTD·Filed 1997·Granted Mar 4, 2003·8 cites·12 claims
- 2236US5066355AMethod of producing hetero structureAGENCY IND SCIENCE TECHN·Filed 1989·Granted Nov 19, 1991·7 cites·7 claims
- 2335US2008135890A1Field-Effect Transistor and Method of Manufacturing SameYAMANASHI TLO CO LTD·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →