Inventor · disambiguated record
Fabrizio Fausto Renzo Toia
Also filed as: TOIA FABRIZIO F · TOIA FABRIZIO FAUSTO RENZO
13 granted patents·10 pending applications·14 citations·filing 2006–2023
85Inventor score
Top patents by PatentIndex Score
23 records- 0190US10062757B2Semiconductor device with buried metallic region, and method for manufacturing the semiconductor deviceST MICROELECTRONICS SRL·Filed 2016·Granted Aug 28, 2018·8 cites·14 claims
- 0287US10796942B2Semiconductor structure with partially embedded insulation regionST MICROELECTRONICS SRL·Filed 2018·Granted Oct 6, 2020·4 cites·20 claims
- 0368US10236378B2Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing processST MICROELECTRONICS SRL·Filed 2017·Granted Mar 19, 2019·1 cites·16 claims
- 0467US10002990B2Porous-silicon light-emitting device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2016·Granted Jun 19, 2018·1 cites·27 claims
- 0566US11469136B2Semiconductor structure with partially embedded insulation region and related methodST MICROELECTRONICS SRL·Filed 2020·Granted Oct 11, 2022·0 cites·20 claims
- 0664US11302471B2Integrated transformerST MICROELECTRONICS SRL·Filed 2020·Granted Apr 12, 2022·0 cites·8 claims
- 0762US10825954B2Porous-silicon light-emitting device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2018·Granted Nov 3, 2020·0 cites·28 claims
- 0859US2021143286A1Semiconductor die with buried capacitor, and method of manufacturing the semiconductor dieST MICROELECTRONICS SRL·Filed 2021·Application pending·0 cites
- 0958US2025167041A1Beol integration solution based on direct cmp to improve intermetal dielectric layerST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1057US10541079B2Integrated transformerST MICROELECTRONICS SRL·Filed 2019·Granted Jan 21, 2020·0 cites·17 claims
- 1156US10930799B2Semiconductor die with buried capacitor, and method of manufacturing the semiconductor dieST MICROELECTRONICS SRL·Filed 2019·Granted Feb 23, 2021·0 cites·13 claims
- 1255US10535767B2Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing processST MICROELECTRONICS SRL·Filed 2019·Granted Jan 14, 2020·0 cites·20 claims
- 1350US10236115B2Integrated transformerST MICROELECTRONICS SRL·Filed 2015·Granted Mar 19, 2019·0 cites·9 claims
- 1447US2022384585A1Integrated electronic circuit including a field plate for the local reduction of the electric field and related manufacturing processST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 1545US7999349B2Front-rear contacts of electronics devices with induced defects to increase conductivity thereofST MICROELECTRONICS SRL·Filed 2007·Granted Aug 16, 2011·0 cites·15 claims
- 1640US2019221652A1Semiconductor electronic device with trench gate and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2019·Application pending·0 cites
- 1739US2017312782A1Integrated acoustic transducer with reduced propagation of undesired acoustic wavesST MICROELECTRONICS SRL·Filed 2017·Application pending·0 cites
- 1838US2007145474A1Vertical-gate mos transistor for high voltage applications with differentiated oxide thicknessST MICROELECTRONICS SRL·Filed 2006·Application pending·0 cites
- 1936US2011175191A1Isolation trenches for semiconductor layersST MICROELECTRONICS SRL·Filed 2010·Application pending·0 cites
- 2034US2018097055A1Micro-transformer with magnetic field confinement and manufacturing method of the sameST MICROELECTRONICS SRL·Filed 2017·Application pending·0 cites
- 2132US2014008722A1Vertical-gate mos transistor with field-plate accessST MICROELECTRONICS SRL·Filed 2013·Application pending·0 cites
- 2229US2012098142A1Electrical contact for a deep buried layer in a semi-conductor deviceCROCE GIUSEPPE·Filed 2011·Application pending·0 cites
- 2324US8796106B2Isolation trenchesMERLINI DANIELE·Filed 2010·Granted Aug 5, 2014·0 cites·33 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →