Inventor · disambiguated record
Paul Thorup
Also filed as: THORUP PAUL
16 granted patents·4 pending applications·352 citations·filing 1999–2018
94Inventor score
Files withFAIRCHILD SEMICONDUCTOR7ALPHA & OMEGA SEMICONDUCTOR4ALPHA & OMEGA SEMICONDUCTOR INCORPORATED2KOCON CHRISTOPHER BOGUSLAW2ALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD1
Top patents by PatentIndex Score
20 records- 0198US7319256B1Shielded gate trench FET with the shield and gate electrodes being connected togetherFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Jan 15, 2008·105 cites·19 claims
- 0297US7446374B2High density trench FET with integrated Schottky diode and method of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Nov 4, 2008·78 cites·28 claims
- 0396US7859047B2Shielded gate trench FET with the shield and gate electrodes connected together in non-active regionFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Dec 28, 2010·34 cites·5 claims
- 0496US7473603B2Method for forming a shielded gate trench FET with the shield and gate electrodes being connected togetherFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Jan 6, 2009·37 cites·10 claims
- 0595US9281368B1Split-gate trench power MOSFET with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Mar 8, 2016·20 cites·10 claims
- 0694US7713822B2Method of forming high density trench FET with integrated Schottky diodeFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted May 11, 2010·31 cites·19 claims
- 0792US8680611B2Field effect transistor and schottky diode structuresKOCON CHRISTOPHER BOGUSLAW·Filed 2012·Granted Mar 25, 2014·9 cites·25 claims
- 0887US10020380B2Power device with high aspect ratio trench contacts and submicron pitches between trenchesALPHA & OMEGA SEMICONDUCTOR INCORPORATED·Filed 2015·Granted Jul 10, 2018·5 cites·10 claims
- 0987US9865694B2Split-gate trench power mosfet with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Jan 9, 2018·4 cites·19 claims
- 1085US8686493B2High density FET with integrated SchottkyTHORUP PAUL·Filed 2008·Granted Apr 1, 2014·18 cites·18 claims
- 1183US9741808B2Split-gate trench power MOSFET with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 22, 2017·3 cites·23 claims
- 1272US10424654B2Power device with high aspect ratio trench contacts and submicron pitches between trenchesALPHA & OMEGA SEMICONDUCTOR INCORPORATED·Filed 2018·Granted Sep 24, 2019·1 cites·13 claims
- 1370US10032728B2Trench MOSFET device and the preparation method thereofALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Jul 24, 2018·1 cites·18 claims
- 1469US7952141B2Shield contacts in a shielded gate MOSFETFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted May 31, 2011·4 cites·16 claims
- 1560US8338285B2Shield contacts in a shielded gate MOSFETDUNN DIXIE·Filed 2011·Granted Dec 25, 2012·2 cites·20 claims
- 1659US2014203355A1Field effect transistor and schottky diode structuresFAIRCHILD SEMICONDUCTOR·Filed 2014·Application pending·0 cites
- 1755US10665551B2Trench MOSFET device and the preparation method thereofALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2018·Granted May 26, 2020·0 cites·6 claims
- 1854US2012156845A1Method of forming a field effect transistor and schottky diodeKOCON CHRISTOPHER BOGUSLAW·Filed 2011·Application pending·0 cites
- 1943US2011204436A1Shielded Gate Trench FET with the Shield and Gate Electrodes Connected Together in Non-active RegionKRAFT NATHAN·Filed 2010·Application pending·0 cites
- 2030US2003060013A1Method of manufacturing trench field effect transistors with trenched heavy bodyFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →