Inventor · disambiguated record
Steven W. Longcor
Also filed as: LONGCOR STEVEN · LONGCOR STEVEN W
56 granted patents·5 pending applications·2,961 citations·filing 1988–2020
99Inventor score
Files withUNITY SEMICONDUCTOR CORP45ADVANCED MICRO DEVICES INC5RINERSON DARRELL5HEFEI RELIANCE MEMORY LTD3CHEVALLIER CHRISTOPHE1
Top patents by PatentIndex Score
61 records- 0199US6753561B1Cross point memory array using multiple thin filmsUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Jun 22, 2004·425 cites·34 claims
- 0298US6965137B2Multi-layer conductive memory deviceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Nov 15, 2005·168 cites·45 claims
- 0398US6834008B2Cross point memory array using multiple modes of operationUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Dec 21, 2004·161 cites·17 claims
- 0497US7884349B2Selection device for re-writable memoryUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Feb 8, 2011·76 cites·39 claims
- 0597US7400006B1Conductive memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jul 15, 2008·58 cites·24 claims
- 0697US7067862B2Conductive memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jun 27, 2006·142 cites·43 claims
- 0797US6917539B2High-density NVRAMUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 12, 2005·134 cites·52 claims
- 0897US6870755B2Re-writable memory with non-linear memory elementUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Mar 22, 2005·137 cites·18 claims
- 0996US9570515B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Feb 14, 2017·12 cites·19 claims
- 1096US6970375B2Providing a reference voltage to a cross point memory arrayUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Nov 29, 2005·108 cites·16 claims
- 1195US9806130B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Oct 31, 2017·10 cites·27 claims
- 1295US9159408B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·12 cites·15 claims
- 1395US8675389B2Memory element with a reactive metal layerCHEVALLIER CHRISTOPHE·Filed 2011·Granted Mar 18, 2014·13 cites·28 claims
- 1495US8003511B2Memory cell formation using ion implant isolated conductive metal oxideUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Aug 23, 2011·26 cites·43 claims
- 1595US7889539B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Feb 15, 2011·19 cites·20 claims
- 1695US7633790B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Dec 15, 2009·23 cites·8 claims
- 1795US7227775B2Two terminal memory array having reference cellsUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jun 5, 2007·30 cites·18 claims
- 1894US7394679B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jul 1, 2008·20 cites·17 claims
- 1994US7075817B2Two terminal memory array having reference cellsUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Jul 11, 2006·66 cites·27 claims
- 2094US7071008B2Multi-resistive state material that uses dopantsUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 4, 2006·69 cites·22 claims
- 2194US7038935B22-terminal trapped charge memory device with voltage switchable multi-level resistanceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted May 2, 2006·85 cites·46 claims
- 2293US8062942B2Method for fabricating multi-resistive state memory devicesRINERSON DARRELL·Filed 2008·Granted Nov 22, 2011·17 cites·19 claims
- 2393US7009909B2Line drivers that use minimal metal layersUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Mar 7, 2006·78 cites·26 claims
- 2493US6850429B2Cross point memory array with memory plugs exhibiting a characteristic hysteresisUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Feb 1, 2005·73 cites·16 claims
- 2593US6831854B2Cross point memory array using distinct voltagesUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Dec 14, 2004·72 cites·17 claims
- 2692US10340312B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Jul 2, 2019·6 cites·20 claims
- 2792US7082052B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Jul 25, 2006·35 cites·15 claims
- 2892US7079442B2Layout of driver sets in a cross point memory arrayUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 18, 2006·71 cites·37 claims
- 2992US6906939B2Re-writable memory with multiple memory layersUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jun 14, 2005·56 cites·26 claims
- 3092US5680345ANonvolatile memory cell with vertical gate overlap and zero birds beaksADVANCED MICRO DEVICES INC·Filed 1995·Granted Oct 21, 1997·80 cites·17 claims
- 3191US6798685B2Multi-output multiplexorUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Sep 28, 2004·60 cites·23 claims
- 3291US4987465AElectro-static discharge protection device for CMOS integrated circuit inputsADVANCED MICRO DEVICES INC·Filed 1988·Granted Jan 22, 1991·71 cites·11 claims
- 3390US6972985B2Memory element having islandsUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Dec 6, 2005·55 cites·13 claims
- 3489US7457147B2Two terminal memory array having reference cellsUNITY SEMICONDUCTOR CORP·Filed 2007·Granted Nov 25, 2008·15 cites·4 claims
- 3589US7439082B2Conductive memory stack with non-uniform widthUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Oct 21, 2008·20 cites·1 claims
- 3689US7326979B2Resistive memory device with a treated interfaceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Feb 5, 2008·51 cites·8 claims
- 3787US7042035B2Memory array with high temperature wiringUNITY SEMICONDUCTOR CORP·Filed 2004·Granted May 9, 2006·45 cites·47 claims
- 3886US6731544B2Method and apparatus for multiple byte or page mode programming of a flash memory arrayNEXFLASH TECHNOLOGIES INC·Filed 2001·Granted May 4, 2004·45 cites·11 claims
- 3986US5661055AMethod of making nonvolatile memory cell with vertical gate overlap and zero birds' beaksADVANCED MICRO DEVICES INC·Filed 1995·Granted Aug 26, 1997·50 cites·23 claims
- 4085US7832090B1Method of making a planar electrodeUNITY SEMICONDUCTOR CORP·Filed 2010·Granted Nov 16, 2010·6 cites·30 claims
- 4182US7528405B2Conductive memory stack with sidewallUNITY SEMICONDUCTOR CORP·Filed 2007·Granted May 5, 2009·9 cites·11 claims
- 4282US7020012B2Cross point array using distinct voltagesUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Mar 28, 2006·27 cites·24 claims
- 4381US7180772B2High-density NVRAMUNITY SEMICONDUCTOR CORP·Filed 2005·Granted Feb 20, 2007·11 cites·19 claims
- 4481US7009235B2Conductive memory stack with non-uniform widthUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Mar 7, 2006·25 cites·20 claims
- 4580US5973374AFlash memory array having well contact structuresINTEGRATED SILICON SOLUTION·Filed 1997·Granted Oct 26, 1999·42 cites·11 claims
- 4679US7186569B2Conductive memory stack with sidewallUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Mar 6, 2007·20 cites·21 claims
- 4778US5552331AProcess for self-aligned source for high density memoryADVANCED MICRO DEVICES INC·Filed 1995·Granted Sep 3, 1996·38 cites·20 claims
- 4877US6909632B2Multiple modes of operation in a cross point arrayUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Jun 21, 2005·21 cites·8 claims
- 4974US11502249B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Nov 15, 2022·0 cites·19 claims
- 5073US7330370B2Enhanced functionality in a two-terminal memory arrayUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Feb 12, 2008·19 cites·18 claims
Showing the top 50 of 61 patent records by PatentIndex Score.
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