Inventor · disambiguated record
Lu Fei
Also filed as: FEI LU
15 granted patents·9 pending applications·143 citations·filing 1999–2021
91Inventor score
Files withMEMC ELECTRONIC MATERIALS8LIBBERT JEFFREY L4SHANGHAI SIMGUI TECH CO LTD3GLOBALWAFERS CO LTD2PITNEY JOHN A2
Top patents by PatentIndex Score
24 records- 0196US8846493B2Methods for producing silicon on insulator structures having high resistivity regions in the handle waferLIBBERT JEFFREY L·Filed 2012·Granted Sep 30, 2014·68 cites·35 claims
- 0294US8330245B2Semiconductor wafers with reduced roll-off and bonded and unbonded SOI structures produced from samePITNEY JOHN A·Filed 2011·Granted Dec 11, 2012·20 cites·46 claims
- 0387US8440541B2Methods for reducing the width of the unbonded region in SOI structuresPITNEY JOHN A·Filed 2011·Granted May 14, 2013·8 cites·29 claims
- 0482US8143078B2Methods for monitoring the amount of contamination imparted into semiconductor wafers during wafer processingLIBBERT JEFFREY L·Filed 2010·Granted Mar 27, 2012·4 cites·8 claims
- 0578US6284039B1Epitaxial silicon wafers substantially free of grown-in defectsMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Sep 4, 2001·27 cites·35 claims
- 0670US11699615B2High resistivity semiconductor-on-insulator wafer and a method of manufactureGLOBALWAFERS CO LTD·Filed 2021·Granted Jul 11, 2023·0 cites·11 claims
- 0766US10483152B2High resistivity semiconductor-on-insulator wafer and a method of manufacturingSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Nov 19, 2019·1 cites·28 claims
- 0866US6565649B2Epitaxial wafer substantially free of grown-in defectsMEMC ELECTRONIC MATERIALS·Filed 2001·Granted May 20, 2003·9 cites·26 claims
- 0962US9343379B2Method to delineate crystal related defectsLIBBERT JEFFREY L·Filed 2011·Granted May 17, 2016·1 cites·11 claims
- 1058US11139198B2High resistivity semiconductor-on-insulator wafer and a method of manufacturingGLOBALWAFERS CO LTD·Filed 2018·Granted Oct 5, 2021·0 cites·32 claims
- 1157US7097718B2Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defectsMEMC ELECTRONIC MATERIALS·Filed 2003·Granted Aug 29, 2006·5 cites·22 claims
- 1253US8822242B2Methods for monitoring the amount of metal contamination in a processLIBBERT JEFFREY L·Filed 2012·Granted Sep 2, 2014·0 cites·19 claims
- 1352US2011212550A1Methods for detecting metal precipitates in a semiconductor waferMEMC ELECTRONIC MATERIALS·Filed 2011·Application pending·0 cites
- 1452US2011212547A1Methods for monitoring the amount of metal contamination imparted into wafers during a semiconductor processMEMC ELECTRONIC MATERIALS·Filed 2011·Application pending·0 cites
- 1545US10529590B2Annealing method for improving bonding strengthSHANGHAI SIMGUI TECH CO LTD·Filed 2018·Granted Jan 7, 2020·0 cites·6 claims
- 1642US2007117350A1Strained silicon on insulator (ssoi) with layer transfer from oxidized donorMEMC ELECTRONIC MATERIALS·Filed 2006·Application pending·0 cites
- 1742US2007042566A1Strained silicon on insulator (ssoi) structure with improved crystallinity in the strained silicon layerMEMC ELECTRONIC MATERIALS·Filed 2006·Application pending·0 cites
- 1842US2007045738A1Method for the manufacture of a strained silicon-on-insulator structureMEMC ELECTRONIC MATERIALS·Filed 2006·Application pending·0 cites
- 1940US10361114B2Method for preparing substrate with carrier trapping centerSHANGHAI SIMGUI TECH CO LTD·Filed 2018·Granted Jul 23, 2019·0 cites·10 claims
- 2039US10388529B2Method for preparing substrate with insulated buried layerSHANGHAI SIMGUI TECH CO LTD·Filed 2018·Granted Aug 20, 2019·0 cites·19 claims
- 2138US2020347513A1Epitaxial wafer processing methodZING SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 2236US2018182662A1Method for preparing substrate with carrier trapping centerSHANGHAI SIMGUI TEHCNOLOGY CO LTD·Filed 2018·Application pending·0 cites
- 2334US2002084451A1Silicon wafers substantially free of oxidation induced stacking faultsFiled 2001·Application pending·0 cites
- 2433US2002185053A1Method for calibrating nanotopographic measuring equipmentFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →